2013 14th European Conference on Radiation and Its Effects on Components and Systems (RADECS) 2013
DOI: 10.1109/radecs.2013.6937398
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SRAMs SEL and SEU in-flight data from PROBA-II spacecraft

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Cited by 23 publications
(14 citation statements)
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“…The proposed approach has been validated with a comparison between the calculation results and the in-flight data reported by M. D'Alessio et al [22]. Particularly, in this section, the PROBA-II mission in-flight SER data have been compared with our calculation results for the AT68166 MultiChip module built with four 0.25 μm AT60142F 4 Mbit devices.…”
Section: B Proba-ii Mission's In-flight Data Analysismentioning
confidence: 87%
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“…The proposed approach has been validated with a comparison between the calculation results and the in-flight data reported by M. D'Alessio et al [22]. Particularly, in this section, the PROBA-II mission in-flight SER data have been compared with our calculation results for the AT68166 MultiChip module built with four 0.25 μm AT60142F 4 Mbit devices.…”
Section: B Proba-ii Mission's In-flight Data Analysismentioning
confidence: 87%
“…The LET spectrum has been generated in the OMERE tool with the PROBA-II orbit parameters as in [22]: 700 km altitude, 98.28° inclination, 3 years duration since March 1, 2010, 10 mm aluminum shield and CRÈME96 solar maximum conditions. The results of the comparison in Table IV show that despite the fact that our method has no free fitting parameters, it gives the best agreement with the on-board data compared to the IRPP calculations.…”
Section: B Proba-ii Mission's In-flight Data Analysismentioning
confidence: 99%
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“…The SEL RPP depth of a deep submicron SRAM is estimated to be m using TPA laser testing [13]. In the recent latchup rate calculations, the SV thickness of deep submicron SRAMs is set to m [4], [6] or m [5], [7]- [9], [11]. In this paper, the main point is to investigate the influence of SV number on SEL rate and so the SV thickness is assumed to be the classical value of m.…”
Section: Sel Rate Predictionsmentioning
confidence: 99%
“…As for memory device, there are two empirical practices to deal with the SEL SV number: one assumes that there is only one SV in the whole device [4]- [6], another assumes that there are as much SEL SVs as the number of memory cells [7]- [9]. The number of SV, which has not been clearly stated in some SEL rate predictions [10]- [13], should be one of the two assumptions.…”
Section: Introductionmentioning
confidence: 99%