Sputtering techniques for epitaxial growth of complex oxides

Dawber, Matthew

doi:10.1016/b978-1-78242-245-7.00002-6

Cited by 7 publications

(4 citation statements)

References 28 publications

(23 reference statements)

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“…where C is a constant, R is the ideal gas constant, and E a is the activation energy for epitaxial film formation [44,45].…”

Section: Magnetron Sputtering and The Parameters Influencing The Sput...mentioning

confidence: 99%

“…The relation between the maximum deposition rate

and substrate temperature (

) for epitaxial film is given by [ 43 ]:

where

is a constant,

is the ideal gas constant, and

is the activation energy for epitaxial film formation [ 44 , 45 ].…”

Section: Epitaxial Growth Of Lead Titanates By Magnetron Sputteringmentioning

confidence: 99%

“…Important issues include control of the film stoichiometry and crystallinity, the choice of target and substrate as well as the partial pressure and total pressure processing gasses throughout the film growth. To address these issues, we discuss below the processes occurring (1) at the target (2) between the target and the substrate, and (3) at the substrate, separately [ 44 ].…”

Section: Epitaxial Growth Of Lead Titanates By Magnetron Sputteringmentioning

confidence: 99%

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Magnetron Sputtered Lead Titanates Thin Films for Pyroelectric Applications: Part 1: Epitaxial Growth, Material Characterization

Fathipour,

Xu,

Rana

2023

Materials

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Pyroelectric materials, are those materials with the property that in the absence of any externally applied electric field, develop a built-in spontaneous polarization in their unit cell structure. They are regarded as ideal detector elements for infrared applications because they can provide fast response time and uniform sensitivity at room temperature over all wavelengths. Crystals of the perovskite Lead Titanate (PbTiO3) family show pyroelectric characteristics and undergo structural phase transitions. They have a high Curie temperature (the temperature at which the material changes from the ferroelectric (polar) to the paraelectric (nonpolar) phase), high pyroelectric coefficient, high spontaneous polarization, low dielectric constant, and constitute important component materials not only useful for infrared detection, but also with vast applications in electronic, optic, and Micro-electromechanical systems (MEMS) devices. However, the preparation of large perfect, and pure single crystals of PbTiO3 is challenging. Additionally, difficulties arise in the application of such bulk crystals in terms of connection to processing circuits, large size, and high voltages required for their operation. A number of thin film fabrication techniques have been proposed to overcome these inadequacies, among which, magnetron sputtering has demonstrated many potentials. By addressing these aspects, the review article aims to contribute to the understanding of the challenges in the field of pyroelectric materials, highlight potential solutions, and showcase the advancements and potentials of pyroelectric perovskite series including PbZrTiO3 (PZT), PbxCa1−x (PZN-PT), etc. for which PbTiO3 is the end member. The review is presented in two parts. Part 1 focuses on material aspects, including preparation methods using magnetron sputtering and material characterization. We take a tutorial approach to discuss the progress made in epitaxial growth of lead titanate-based ceramics prepared by magnetron sputtering and examine how processing conditions may affect the crystalline quality of the growing film by linking to the properties of the substrate/buffer layer, growth substrate temperature, and the oxygen partial pressure in the gas mixture. Careful control and optimization of these parameters are crucial for achieving high-quality thin films with desired structural and morphological characteristics.

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“…where C is a constant, R is the ideal gas constant, and E a is the activation energy for epitaxial film formation [44,45].…”

Section: Magnetron Sputtering and The Parameters Influencing The Sput...mentioning

confidence: 99%

“…The relation between the maximum deposition rate

and substrate temperature (

) for epitaxial film is given by [ 43 ]:

where

is a constant,

is the ideal gas constant, and

is the activation energy for epitaxial film formation [ 44 , 45 ].…”

Section: Epitaxial Growth Of Lead Titanates By Magnetron Sputteringmentioning

confidence: 99%

Section: Epitaxial Growth Of Lead Titanates By Magnetron Sputteringmentioning

confidence: 99%

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Magnetron Sputtered Lead Titanates Thin Films for Pyroelectric Applications: Part 1: Epitaxial Growth, Material Characterization

Fathipour,

Xu,

Rana

2023

Materials

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“…Over the past several decades, developments in chemical vapour techniques (including oxide molecular beam epitaxy (MBE) [7], pulsed laser deposition (PLD) [8], and rf sputtering [9]) have facilitated the creation of structurally perfect perovskite oxide films, which can reach a degree of perfection rivalling heteroepitaxial semiconductors. The ability to grow such materials layer-by-layer (using in-situ growth monitoring) with atomically perfect interfaces has uncovered a raft of novel physics and potential functionality.…”

Section: Substrates and Growth Techniquesmentioning

confidence: 99%

Strain and orientation engineering in ABO₃ perovskite oxide thin films

Sando¹

2022

J. Phys.: Condens. Matter

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Perovskite oxides with chemical formula ABO3 are widely studied for their properties including ferroelectricity, magnetism, strongly correlated physics, optical effects, and superconductivity. A thriving research direction using such materials is through their integration as epitaxial thin films, allowing many novel and exotic effects to be discovered. The integration of the thin film on a single crystal substrate, however, can produce unique and powerful effects, and can even induce phases in the thin film that are not stable in bulk. The substrate imposed mechanical boundary conditions such as strain, crystallographic orientation, octahedral rotation patterns, and symmetry can also affect the functional properties of perovskite films. Here, the author reviews the current state of the art in epitaxial strain and orientation engineering in perovskite oxide thin films. The paper begins by introducing the effect of uniform conventional biaxial strain, and then moves to describe how the substrate crystallographic orientation can induce symmetry changes in the film materials. Various material case studies, including ferroelectrics, magnetically ordered materials, and nonlinear optical oxides are covered. The connectivity of the oxygen octahedra between film and substrate depending on the strain level as well as the crystallographic orientation is then discussed. The review concludes with open questions and suggestions worthy of the community’s focus in the future.

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Sputtered Piezoelectric Films as Materials for Flexible Devices and Sensors: A Review

Fraga,

Massi,

Pessoa

2024

IEEE Sensors J.

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Sputtering techniques for epitaxial growth of complex oxides

Cited by 7 publications

References 28 publications

Magnetron Sputtered Lead Titanates Thin Films for Pyroelectric Applications: Part 1: Epitaxial Growth, Material Characterization

Magnetron Sputtered Lead Titanates Thin Films for Pyroelectric Applications: Part 1: Epitaxial Growth, Material Characterization

Strain and orientation engineering in ABO₃ perovskite oxide thin films

Sputtered Piezoelectric Films as Materials for Flexible Devices and Sensors: A Review

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Sputtering techniques for epitaxial growth of complex oxides

Cited by 7 publications

References 28 publications

Magnetron Sputtered Lead Titanates Thin Films for Pyroelectric Applications: Part 1: Epitaxial Growth, Material Characterization

Magnetron Sputtered Lead Titanates Thin Films for Pyroelectric Applications: Part 1: Epitaxial Growth, Material Characterization

Strain and orientation engineering in ABO3 perovskite oxide thin films

Sputtered Piezoelectric Films as Materials for Flexible Devices and Sensors: A Review

Contact Info

Product

Resources

About

Strain and orientation engineering in ABO₃ perovskite oxide thin films