Sputtering Process of ScxAl1−xN Thin Films for Ferroelectric Applications

Abstract

Several key sputtering parameters for the deposition of ScxAl1−xN such as target design, sputtering atmosphere, sputtering power, and substrate temperature are reviewed in detail. These parameters serve a crucial role in the ability to deposit satisfactory films, achieve the desired stoichiometry, and meet the required film thickness. Additionally, these qualities directly impact the degree of c-axis orientation, grain size, and surface roughness of the deposited films. It is systematically shown that the electric properties of ScxAl1−xN are dependent on the crystal quality of the film. Although it is not possible to conclusively say what the ideal target design, sputtering atmosphere, sputtering power, and substrate temperature should be for all sputtering processes, the goal of this paper is to analyze the impacts of the various sputtering parameters in detail and provide some overarching themes that arise to assist future researchers in the field in quickly tuning their sputtering processes to achieve optimum results.

CMOS-compatible photonic integrated circuits on thin-film ScAlN

“…The inset shows a wurtzite structure with the Al atoms being replaced by the Sc dopants. While doping flattens the wurtzite structure toward the layered hexagonal structure, 28 the current ScAlN film is still expected to exhibit a wurtzite structure due to the relatively low doping concentration.…”

Особенности Микроструктуры И Свойств Тонких Сферолитовых Пленок Цтс, Сформированных Двухстадийным Методом Высокочастотного Магнетронного Осаждения

“…Kaptelov 4 , I.P. Pronin 4 1 NRC «Kurchatov institute» -CRISM «Prometey», Saint Petersburg, Russia 2 NUST MISIS, Moscow, Russia 3 Herzen University, Saint Petersburg, Russia 4 Ioffe Institute, Saint Petersburg, Russia 10.26456/pcascnn/2023.15.196 Abstract: The paper presents the results of experimental studies of the microstructure and piezoelectric properties of thin lead zirconate-titanate films characterized by either an island structure of radially radiant spherulites located in a low-temperature pyrochlore matrix or a block single-phase spherulitic structure with different linear block sizes. Changing the size of the blocks within 10-50 µm was achieved by varying the distance from the target to the substrate in the range of 30-70 mm, leading to a change in the heating temperature of the substrate in the radio-frequency magnetron sputtering of a ceramic target during film deposition on a «cold» platinized silicon substrate.…”

“…Hf Zr O , проявляющих уникальные сегнетоэлектрические свойства, технологии приготовления которых совместимы с кремниевой микроэлектроникой [1][2][3][4]. Вместе с тем, продолжаются исследования и совершенствование уже традиционных тонкопленочных материалов на основе твердых растворов цирконататитаната свинца (…”

Cast Microstructure and Crystallographic Features of Al3Sc Dendrites in High Sc-Contained Al-Sc Alloys

“…The Al 1−x Sc x N films could be produced by reactive magnetic sputtering [7][8][9], a method highly attractive for mass production. The Al-Sc alloy target plays a crucial role in the sputtering process, and the specific Al-Sc alloy target is sputtered and combined with nitrogen to form the Al 1−x Sc x N film.…”