Sputtering pressure influence on growth morphology, surface roughness, and electrical resistivity for strong anisotropy beryllium film

Luo, Bing; Li, Kai; Kang, Xiaoli; Zhang, Jiqiang; He, Yudan; Luo, Jiangshan; Wu, Weidong; Tang, Yongjian

doi:10.1088/1674-1056/23/6/066804

Cited by 12 publications

(3 citation statements)

References 19 publications

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“…More details concerning the Be film growth method can be found in other studies. [30][31][32] Finally, the shaped Be films were obtained using a standard lift-off process. The optical image of the typical Be devices can be found in the insets of Figure 1a,b.…”

Section: Methodsmentioning

confidence: 99%

Resistivity Minimum in Beryllium Films

Jin

et al. 2021

Physica Status Solidi (b)

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In the analysis of the resistivity of metals, the classical Boltzmann transport equation fails in the condition that the thermal phonon wavelength is larger than the electron mean free path (called the non‐Boltzmann transport regime), and a quantum kinetic equation must be solved. In such a case, the interference between electron−phonon and electron−impurity scattering (electron−phonon−impurity interference effect) should be considered. Herein, the electrical transport properties of Be films grown via direct current magnetron sputtering are studied. Due to the high Debye temperatures and high impurity/defect concentrations of the Be films, the thermal phonon wavelength is larger than the electron mean free path, indicating the non‐Boltzmann transport. The significant resistivity correction from the electron−phonon−impurity interference effect should be observed in the Be films. In the temperature dependence of the resistivity of the Be films, a resistivity minimum near 90 K is observed. After subtracting the contributions of electron−electron and electron−phonon interactions, the electron−phonon−impurity interference‐contributed resistivity is obtained, which increases with temperature like ∝T2. The signature of the resistivity contribution from electron−phonon−impurity interference effect is observed in the non‐Boltzmann transport regime.

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Section: Methodsmentioning

confidence: 99%

Resistivity Minimum in Beryllium Films

Jin

et al. 2021

Physica Status Solidi (b)

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“…Some properties of Be-based materials, such as nucleus property, physics property and ablation property cannot be substituted by any other metal materials [1][2][3][4][5][6][7][8][9][10][11][12] . In comparison to the conventional CH ablator, Be-based materials are the best inertial confinement fusion (ICF) ablator due to their low x-ray opacity, high density, high thermal conductivity, as well as having the highest mass ablation rate at every temperature and providing more ablative stabilization [1][2][3][4] .…”

Section: Introductionmentioning

confidence: 99%

“…During the Be-based coating growth, the Be atoms array in the form of hexagonalclose-packed (hcp) structure, and the crystal grains grow along c-axis orientation. The Be coatings are mainly characterized by a coarsening columnar grain, and display a strong anisotropy characteristics [12][13][14][15] . These disadvantages weaken the mechanical property and affect ablation characteristics for Be-based materials; thus, a grain refinement method should be developed.…”

Section: Introductionmentioning

confidence: 99%

An investigation progress toward Be-based ablator materials for the inertial confinement fusion

Luo

Zhang

et al. 2017

High Pow Laser Sci Eng

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The Be-based materials with many particular properties lead to an important research subject. The investigation progresses in the fabrication technologies are introduced here, including main three kinds of Be-based materials, such as Be-Cu capsule, Be 2 C ablator and high-purity Be material. Compared with the pioneer workgroup on Be-based materials, the differences in Be-Cu target fabrication were described, and a grain refinement technique by an active hydrogen reaction for Be coating was proposed uniquely. Be 2 C coatings were first prepared by the DC reactive magnetron sputtering with a high deposition rate (∼300 nm/h). Pure polycrystalline Be 2 C films with uniform microstructures, smooth surface, high density (∼2.2 g · cm 3 ) and good optical transparency were fabricated. In addition, the high-purity Be materials with metal impurities in a ppm magnitude were fabricated by the pyrolysis of organometallic Be.

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