1995
DOI: 10.1016/0169-4332(95)00128-x
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Sputtering of tantalum-based diffusion barriers in metallization: effects of gas pressure and composition

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Cited by 51 publications
(16 citation statements)
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“…III. The bulk properties of Ta and TaN compounds [5][6][7][10][11][12][13][14] are presented in Sec. III A while the interfacial properties of Cu/TaN system are included in Sec.…”
Section: Introductionmentioning
confidence: 99%
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“…III. The bulk properties of Ta and TaN compounds [5][6][7][10][11][12][13][14] are presented in Sec. III A while the interfacial properties of Cu/TaN system are included in Sec.…”
Section: Introductionmentioning
confidence: 99%
“…On the experimental side, research is mostly concentrated on the growth of TaN thin films, the characterization of fabricated structures, and the annealing test of barrier effectiveness. [5][6][7][8][9][10][11][12][13][14] It has been shown that the presence of N in TaN compounds enhances the resistivity to diffusions 6,7 and the stacking of TaN compounds on Ta layers 11 improves the performance of the barrier materials. However the relationship between the barrier efficiency and material structure has not been established.…”
Section: Introductionmentioning
confidence: 99%
“…1,2 Compared with TiN, TaN has higher thermal stability, relatively dense interstitial structure, and thickness advantages that fulfill the requirements for nextgeneration ultra-large-scale integration devices. [3][4][5][6] However, TaN has a variety of stable phases (such as solid-solution α-Ta(N), hcp-γ-phase, and hexagonal ε-phase) and metastable phases (such as bcc β-TaN, hexagonal δ-phase TaN, hexagonal WC structure θ-TaN, and B1 NaCl-structured TaN), 7,8 bringing complexities into the fabrication of TaN diffusion barriers. [9][10][11] Moreover, diffusion barrier materials also act as interconnections between Cu and underlying Si devices.…”
Section: Introductionmentioning
confidence: 99%
“…TaN has been demonstrated to be one of the most promising diffusion barrier materials for Cu interconnects, because of its high thermal stability, dense interstitial structure, thickness advantages and low resistivity [1][2][3][4][5]. It has a variety of compositions and crystalline phases, including tetragonal phases (Ta 3 N 5 and Ta 4 N 5 ), hexagonal phases (Ta 5 N 6 , ɛ-TaN, δ-TaN and γ-Ta 2 N close packed), body centered cubic (TaN~0 .005 ) [6], and face centered cubic TaN (B1-NaCl) [7].…”
Section: Introductionmentioning
confidence: 99%