Sputtering of SiO2 in O2Ar atmospheres

The effect of metal–insulator interface interactions on electrical transport in granular metals

“…The Zr 3d and Y 3d core level photoelectron peaks for the YSZ film do not appear affected by the oxygen deficiencies. Such oxygen deficiencies are common for oxide materials sputtered in a pure Ar environment [67][68][69][70]. Other GM studies have not typically reported the insulator quality, but similar oxygen vacancies are anticipated throughout the literature.…”

Optimisation of bi-layer resist overhang structure formation and SiO2 sputter-deposition process for fabrication of gold multi-electrode array

“…The deposition rate, which was determined from the crosssection FESEM image, is highest under pure argon supply condition and decreases rapidly upon supply of oxygen. The decrease in deposition rate upon oxygen supply had already been reported by several groups 16,[19][20][21] and had been explained in term of the replacement of sputtered oxygen atoms by oxygen from the gas phase before Si atom can be sputtered from the weakly bound state. 22,23 Santamaria et al 16 had also explained the effect of oxygen supply in terms of annihilation of defects consisting of oxygen vacancies.…”

“…The decrease in deposition rate upon oxygen supply had already been reported by several groups 16,[19][20][21] and had been explained in term of the replacement of sputtered oxygen atoms by oxygen from the gas phase before Si atom can be sputtered from the weakly bound state. 22,23 Santamaria et al 16 had also explained the effect of oxygen supply in terms of annihilation of defects consisting of oxygen vacancies. In our case, the sputterdeposition rate decreases rapidly upon supply of oxygen and saturates at above 5%, and this rapid decrease and saturation is close to that reported by Santamaria et al 17 Some other groups 20,24 reported gradual decrease even up to 45%, and we attribute this difference to the difference in sputter system used.…”

“…For example, dielectric loss of sputter-deposited lm had already shown to be affected by the oxygen content. 16 Therefore we have investigated the effect of oxygen on the current leakage in terms of electrochemical CV and impedance, electrical noise and neuronal activity recording capability. Fig.…”

An oxygen vacancy mediated Ag reduction and nucleation mechanism in SiO2 RRAM devices

“…Calculations for the O vacancy give mean, minimum and maximum VO formation energies of 5.3, 4.2 and 6.3 eV respectively. The concentration of oxygen vacancies has a strong dependence upon growth method, with sputter deposited / thermal films known to be vacancy rich [26], [27]. From Fig.…”