Sputtering of amorphous silicon films by 0.5 to 5 keV Ar+ ions

Kirschner, J.; Etzkorn, H.

doi:10.1016/0378-5963(79)90024-2

Cited by 69 publications

(17 citation statements)

References 54 publications

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“…The agreement is quite good, if not excellent. Slight deviations observed in the large-depth tails at fluences > 2 Â 10 16 cm À2 as well as somewhat more pronounced deviations at the leading edge of the profile for 5 Â 10 15 [19,22] with profiles calculated using the rapid relocation model (solid lines). The limited depth resolution in the simulations was taken into account in the rapid relocation model.…”

Section: Comparison With Sdtrimsp Simulationsmentioning

confidence: 93%

“…8 saturation areal densities N 1 of Xe and Ar [23,24] are compared with data obtained by SDTrimSP simulations [19,22] (the increase in the areal density of Ar observed in [24] at fluences exceeding 1 Â 10 16 cm À2 appears to be an extreme case of enhanced retention due to sample oxidation in the employed plasma device; the effect has been explored in detail some time ago [25]). One data point illustrating the strongly reduced retention at oblique incidence is also shown (3 keV Ar @ 51° [15]). Below 100 keV the measured and calculated results for Ar exhibit almost the same energy dependence, with a maximum deviation of about 25%.…”

Section: Energy Dependence Of Inert Gas Retention and Relocation Effimentioning

confidence: 96%

“…The data point for 1 keV Ar was obtained by thermal desorption mass spectrometry [24]. Electron excited X-ray analysis was used to determine the stationary areal density for 3 keV Ar on Si at 51° [15]. below 10 keV in Fig.…”

Section: Energy Dependence Of Inert Gas Retention and Relocation Effimentioning

confidence: 99%

“…Implanted rare gas atoms may enhance the stationary 0168-583X/$ -see front matter Ó 2009 Elsevier B.V. All rights reserved. doi:10.1016/j.nimb.2009.06.097 sputtering yield significantly or even strongly beyond the value observed at the beginning of bombardment [14,15]. Most of the previous work on implantation distributions of medium-mass and heavy rare gases in light-atom targets was performed using Rutherford backscattering spectrometry (RBS) [7,[11][12][13]16,17].…”

Section: Introductionmentioning

confidence: 99%

“…Most of the previous work on implantation distributions of medium-mass and heavy rare gases in light-atom targets was performed using Rutherford backscattering spectrometry (RBS) [7,[11][12][13]16,17]. Occasionally mean near-surface concentrations of implanted gases were determined by Auger electron spectroscopy [15,18], areal densities by electron induced X-ray emission [15].…”

Section: Introductionmentioning

confidence: 99%

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Rapid-relocation model for describing high-fluence retention of rare gases implanted in solids

Wittmaack

2009

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Comparison With Sdtrimsp Simulationsmentioning

confidence: 93%

Section: Energy Dependence Of Inert Gas Retention and Relocation Effimentioning

confidence: 96%

Section: Energy Dependence Of Inert Gas Retention and Relocation Effimentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Rapid-relocation model for describing high-fluence retention of rare gases implanted in solids

Wittmaack

2009

Nuclear Instruments and Methods in Physics Research Section B:

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Comparison of basic principles of the surface‐specific analytical methods: AES/SAM, ESCA (XPS), SIMS, and ISS with X‐ray microanalysis, and some applications in research and industry

Hantsche

1989

Scanning

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Modern analytical methods for the investigation of surfaces have been greatly improved during the last decade, and the number of instruments offered by manufacturers has increased accordingly. In this article, four of the most frequently applied methods are discussed, with emphasis on those which have found wider application in industry. The aim of this report is to give an easily understandable introduction to all those who are not yet familiar with surface analytical methods. Emphasis is on the Auger electron spectroscopy (AES), the most popular technique for elemental analysis of surfaces. The numerous analytical methods differ widely in information depth, lateral resolution, level of nondestructiveness, detection limits, and the possibility of getting quantitative results. Compared with the well known x‐ray microprobe analysis, the surface‐sensitive methods have a lower information depth of up to four orders of magnitude and are therefore well suited to analyze extremely thin films down to a few atomic layers. First, the fundamental physical principles of the atomic excitation and emission processes are described, then the main characteristics of the four methods and their information content are discussed. Finally, some applications are given for the characterization of interesting technical materials.

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The dependence on the angle of incidence of the steady state sputter yield of silicon bombarded by oxygen ions

Warmoltz

Werner

Morgan

1980

Surface & Interface Analysis

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The increased dependence of the sputter yield of silicon on the angle of incidence under oxygen ion bombardment, as compared to argon ion bombardment, observed during a SIMS analysis is discussed. Taking into account that the sputter yield depends on the implanted oxygen concentration, a relation is derived between the steady state sputter yield and the implanted oxygen surface concentration for different angles of incidence. Since this relation is in itself insufficient to determine the steady state values of the sputter yield and the surface concentration actually obtained, a graphical method is used to combine it with a second one, viz. the dependence of the momentary sputter yield on the momentary surface concentration. Measurements of the steady state sputter yield of silicon, bombarded by oxygen ions in the lower keV range at different angles of incidence, agree with the predicted values.

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Sputtering of amorphous silicon films by 0.5 to 5 keV Ar+ ions

Cited by 69 publications

References 54 publications

Rapid-relocation model for describing high-fluence retention of rare gases implanted in solids

Rapid-relocation model for describing high-fluence retention of rare gases implanted in solids

Comparison of basic principles of the surface‐specific analytical methods: AES/SAM, ESCA (XPS), SIMS, and ISS with X‐ray microanalysis, and some applications in research and industry

The dependence on the angle of incidence of the steady state sputter yield of silicon bombarded by oxygen ions

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