Sputtering configurations and the luminescence of rare earth-doped silicon rich oxide thin films

Rozo, C.; Fonseca, Luis F.

doi:10.1016/j.optmat.2009.12.002

Cited by 4 publications

(3 citation statements)

References 18 publications

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“…During the preparation process of BiT‐based thin films, bismuth is very easy to volatilize to produce bismuth vacancies accompanying by oxygen vacancies. The defects usually act as traps to induce nonradiative transitions, and then results in emission degradation 22–24 . The high‐valent W 6+ substitution with proper concentration can decrease concentration of the oxygen vacancies in the host lattices, 25,26 and thus improve upconversion emissions.…”

Section: Resultsmentioning

confidence: 99%

“…The defects usually act as traps to induce nonradiative transitions, and then results in emission degradation. [22][23][24] The high-valent W 61 substitution with proper concentration can decrease concentration of the oxygen vacancies in the host lattices, 25,26 [15][16][17] In BiT-based thin films, A-site substitution of larger Bi 31 ions by smaller rare-earth ions in the pseudo-perovskite layer can result in largely enhanced rotation…”

Section: Resultsmentioning

confidence: 99%

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Strong Upconversion Photoluminescence and Large Ferroelectric Polarization in Er³⁺–Yb³⁺–W⁶⁺ Triply Substituted Bismuth Titanate Thin Films Prepared by Chemical Solution Deposition

et al. 2011

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Strong upconversion photoluminescence and large ferroelectric polarization were observed for the first time in layered structure Er3+–Yb3+–W6+ triply substituted bismuth titanate thin films. The thin films were prepared on fused silica and Pt(111)/Ti/SiO2/Si substrates by chemical solution deposition. Two green emission bands and a red one were observed in the upconversion photoluminescence spectra for all the films pumped by a 980 nm laser diode, which correspond to 2H11/2, 4S3/2, and 4F9/2 to 4I15/2 transitions of Er3+ ions, respectively. A two‐photon energy‐transfer process was confirmed by the power dependence of emission intensity. Compared with that of Er3+–Yb3+‐substituted bismuth titanate thin films, the improved photoluminescence is related to the reduced defects such as oxygen vacancies due to B‐site (Ti4+) substitution by W6+ ions, while the large ferroelectric remnant polarization can be attributed to the increased structure distortion and the reduced oxygen vacancies due to cosubstitution of A‐site (Bi3+) and B‐site (Ti4+) by Er3+, Yb3+, and W6+ ions, respectively. The combination of the strong upconversion photoluminescence and the good ferroelectric properties in the thin films would open the possibility of realizing novel multifunctional optoelectronic integration device applications.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Strong Upconversion Photoluminescence and Large Ferroelectric Polarization in Er³⁺–Yb³⁺–W⁶⁺ Triply Substituted Bismuth Titanate Thin Films Prepared by Chemical Solution Deposition

et al. 2011

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“…The defects usually act as traps to induce non-radiative transitions and hence result in emission degradation. [25][26][27] The high-valent W 6þ ions can effectively decrease oxygen vacancy concentration in the host crystal lattice, 16,28 and thus improve up-conversion emission intensity.…”

Section: Resultsmentioning

confidence: 99%

Combination of Strong Blue Up-Conversion Photoluminescence and Greatly Enhanced Ferroelectric Polarization in Tm3+-Yb3+-W6+- Doped Bi4Ti3O12 Thin Films

Gao

Ding

Zhou

et al. 2011

J. Electrochem. Soc.

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A strong blue up-conversion photoluminescence and a greatly enhanced ferroelectric polarization were observed in Tm 3þ -Yb 3þ -W 6þ -triply-doped bismuth titanate thin films. The thin films were prepared on fused silica and Pt=Ti=SiO 2 =Si (111) substrates by chemical solution deposition and annealed at 700 C. The strong blue up-conversion emission centered at 478 nm, corresponding to 1 G 4 ! 3 H 6 transitions of Tm 3þ ions, was confirmed to be a three-photon energy-transfer process by pumping laser power dependence of emission intensity. The enhanced ferroelectricity with a high remnant polarization (Pr) value of about 32 lC=cm 2 is attributed to the weakened domain pinning due to the reduced oxygen vacancies by W 6þ substitution for Ti 4þ ions. The thin films combining the strong blue up-conversion photoluminescence with the good ferroelectric properties would provide possibility of realizing novel multifunctional optoelectronic integration device applications.

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Photoluminescence of Er-doped silicon-rich oxide thin films with high Al concentrations

et al. 2011

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Sputtering configurations and the luminescence of rare earth-doped silicon rich oxide thin films

Cited by 4 publications

References 18 publications

Strong Upconversion Photoluminescence and Large Ferroelectric Polarization in Er³⁺–Yb³⁺–W⁶⁺ Triply Substituted Bismuth Titanate Thin Films Prepared by Chemical Solution Deposition

Strong Upconversion Photoluminescence and Large Ferroelectric Polarization in Er³⁺–Yb³⁺–W⁶⁺ Triply Substituted Bismuth Titanate Thin Films Prepared by Chemical Solution Deposition

Combination of Strong Blue Up-Conversion Photoluminescence and Greatly Enhanced Ferroelectric Polarization in Tm3+-Yb3+-W6+- Doped Bi4Ti3O12 Thin Films

Photoluminescence of Er-doped silicon-rich oxide thin films with high Al concentrations

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Sputtering configurations and the luminescence of rare earth-doped silicon rich oxide thin films

Cited by 4 publications

References 18 publications

Strong Upconversion Photoluminescence and Large Ferroelectric Polarization in Er3+–Yb3+–W6+ Triply Substituted Bismuth Titanate Thin Films Prepared by Chemical Solution Deposition

Strong Upconversion Photoluminescence and Large Ferroelectric Polarization in Er3+–Yb3+–W6+ Triply Substituted Bismuth Titanate Thin Films Prepared by Chemical Solution Deposition

Combination of Strong Blue Up-Conversion Photoluminescence and Greatly Enhanced Ferroelectric Polarization in Tm3+-Yb3+-W6+- Doped Bi4Ti3O12 Thin Films

Photoluminescence of Er-doped silicon-rich oxide thin films with high Al concentrations

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Strong Upconversion Photoluminescence and Large Ferroelectric Polarization in Er³⁺–Yb³⁺–W⁶⁺ Triply Substituted Bismuth Titanate Thin Films Prepared by Chemical Solution Deposition

Strong Upconversion Photoluminescence and Large Ferroelectric Polarization in Er³⁺–Yb³⁺–W⁶⁺ Triply Substituted Bismuth Titanate Thin Films Prepared by Chemical Solution Deposition