Sputtering and surface state evolution of Bi under oblique incidence of 120keV Ar+ ions

Mammeri, S.; Ouichaoui, S.; Ammi, H.; Hammoudi, H.; Pineda-Vargas, C.A.

doi:10.1016/j.nimb.2010.12.003

Cited by 9 publications

(22 citation statements)

References 32 publications

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“…It was interpreted to be caused by two competing processes: (i) a rapid degradation of the Au films due to the same ionization mechanism as that occurring with fission fragment tracks in thin discontinuous metal films followed by (ii) a stabilization of the target erosion due to ionization-induced cracking of hydrocarbon. In an other hand, this trend (but with yields of lower order of magnitude) is also similar to that we have pointed out recently for Bi/Si thin films irradiated by 60 and 120 keV Ar + ions [17,18] (see Fig. 8 of Ref.…”

Section: Sputtering Yield Comparison To Theorysupporting

confidence: 91%

“…Beside the main objective of performing quantitative measurements of the induced surface effects in Bi, we attempted to understand the experimental observations by highlighting, following other groups, the above ion-surface interaction mechanisms that are still being debated. For comparison to previous measurements and interpreting the observed (moderate) SHI irradiation effects, we will also refer to our recent works on similar Bi thin films irradiated by keV Ar + ions [17,18]. In those experiments, the sputtering yield data and other observed Bi surface effects were satisfactorily interpreted by primarily invoking interaction mechanisms supporting the generation of linear elastic collision cascades [2,19].…”

Section: Introductionmentioning

confidence: 59%

“…Such a close dependence of the sputtering yield on ion fluence was ascribed to the Bi target material nature and to the changes induced by ion irradiation in its surface topography and crystalline structure at a microscopic level [17,[27][28][29]. In the case of tens keV Ar + incident ions, where nuclear and electronic energy losses amount to comparable magnitudes, we assumed a rather complex interplay between elastic and inelastic collision processes for interpreting the observed surface effects induced in Bi thin films [17,18], although mechanisms involving mainly elastic collisions could be dominating.…”

Section: Sputtering Yield Comparison To Theorymentioning

confidence: 99%

“…In the following we, first, succinctly report (in Section 2) on the general experimental method, set up and techniques used described in more detail elsewhere [17,18]. Then, we present and discuss (in Section 3) the obtained experimental results before giving a summary and concluding (in Section 4).…”

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Sputtering and surface topography modification of bismuth thin films under swift 84Kr15+ ion irradiation

Mammeri

Ouichaoui

Ammi

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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Section: Sputtering Yield Comparison To Theorysupporting

confidence: 91%

Section: Introductionmentioning

confidence: 59%

Section: Sputtering Yield Comparison To Theorymentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Sputtering and surface topography modification of bismuth thin films under swift 84Kr15+ ion irradiation

Mammeri

Ouichaoui

Ammi

et al. 2012

Nuclear Instruments and Methods in Physics Research Section B:

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“…Las imágenes de la topografía de las películas de bismuto logradas mediante AFM se muestran en la Figura 2, donde se observa que hay un efecto de las frecuencias sobre la su-distribución de granos más homogénea, mientras que en las otras dos películas exhiben partículas con diferentes tamaños de grano y en todos los casos más grandes que los hallados en la película crecida a 40 kHz. Esta distribución de partícu-las genera la alta rugosidad de las películas de bismuto las cuales son de 25.1 nm, 20.0nm y 28.9 nm en las muestras a 0 40 y 80 khz, respectivamente, estos mismos resultados han sido reportados por otros autores [9,14,20]. [21][22].…”

Section: Caracterización Estructural Y Electroquímicaunclassified

Producción y caracterización de recubrimientos de bismuto producidos con magnetrón desbalanceado pulsado

Ortiz

Alfonso

Rodil

2014

Rev. Acad. Colomb. Cienc. Ex. Fis. Nat.

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RESUMENOrtiz M. F.; J. E. Alfonso; J. J. Olaya; S. E. Rodil: Producción y caracterización de recubrimientos de bismuto producidos con magnetrón desbalanceado pulsado. Rev. Acad. Colomb. Cienc. 37 (143): 245-251, 2013. ISSN 0370-3908.En este trabajo se presentan los resultados obtenidos en el crecimiento de recubrimientos de bismuto sobre sustratos de vidrio común, silicio y acero inoxidable 316L, usando un sistema de pulverización catódica dc pulsado con magnetrón desbalanceado y la evaluación de la microestructura, la morfología, la composición que genera la fuente de descarga. La microestructura de los recubrimientos fue evaluada por difracción de rayos X (XRD); la morfología se evaluó mediante microscopía de fuerza atómica (AFM); la composición química se determinó mediante espectroscopia de fotoelectrones emitidos por rayos X (XPS), las pruebas electroquí-micas mediante ensayos de ventanas de corrosión y la adherencia entre el sustrato y el recubrimiento se evaluó mediante pruebas de rayado. El análisis DRX indica que los recubrimientos son policristalinos, los análisis de AFM determinaron que los valores de rugosidad son del orden de 25 nm. El análisis de XPS mostró que hay energías de ligadura asociadas a Bi metálico y oxido de Bi, las pruebas electroquímicas establecieron que los recubrimientos de Bi presentan un rango de potencial entre -0,315 y 1,49 mV. Finalmente, el estudio de adherencia mostró que el recubrimiento se desprende del sustrato cuando es sometido a una carga de 4.5 N.Palabras Clave: Recubrimientos, pulverizacion Catodica, fotoelectrones, adherencia. ABSTRACTIn this work present the results obtained in the growth of Bi coatings onto common glass, silicon and stainless steel 316 L substrates through dc unbalanced magnetron sputtering and evaluation of the microstructure, frequency pulse of the power supply are presented. The microstructure of the coatings was evaluated through -cial chemical composition was analyzed by x-ray photoelectrons spectroscopy (XPS), electrochemical test was

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Sputtering of bismuth thin films under MeV Cu heavy ion irradiation: Experimental data and inelastic thermal spike model interpretation.

Mammeri

Msimanga

Dib

et al. 2017

Surface & Interface Analysis

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The sputtering of bismuth (Bi/Si) thin films deposited onto silicon substrates and irradiated by swift Cu q+ heavy ions (q = +4 to +7) was investigated by varying both the ion energy over the 10 to 26-MeV range and the ion fluence ϕ from 5.1 × 10 13 cm −2 to 3.4 × 10 15 cm −2 . The sputtering yields were determined experimentally via the Rutherford backscattering spectrometry technique using a 2-MeV He + ion beam. The measured sputtering yields versus Cu 7+ ion fluence for a fixed incident energy of 26 MeV exhibit a significant depression at very low ϕ-values flowed by a steady-state regime above~1.6 × 10 14 cm −2 , similarly to those previously pointed out for Bi thin films irradiated by MeV heavy ions. By fixing the incident ion fluence to a mean value of~2.6 × 10 15 cm −2 in the upper part of the yield saturation regime, the measured sputtering yield data versus ion energy were found to increase with increasing the electronic stopping power in the Bi target material. Their comparison to theoretical predicted models is discussed. A good agreement is observed between the measured sputtering yields and the predicted ones when considering the contribution of 2 competitive processes of nuclear and electronic energy losses via, respectively, the SRIM simulation code and the inelastic thermal spike model using refined parameters of the ion slowing down with reduced thermophysical proprieties of the Bi thin films. KEYWORDS electronic sputtering yield, nuclear and electronic stopping power, Rutherford backscattering spectrometry (RBS), inelastic thermal spike model, sss

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Sputtering and surface state evolution of Bi under oblique incidence of 120keV Ar+ ions

Cited by 9 publications

References 32 publications

Sputtering and surface topography modification of bismuth thin films under swift 84Kr15+ ion irradiation

Sputtering and surface topography modification of bismuth thin films under swift 84Kr15+ ion irradiation

Producción y caracterización de recubrimientos de bismuto producidos con magnetrón desbalanceado pulsado

Sputtering of bismuth thin films under MeV Cu heavy ion irradiation: Experimental data and inelastic thermal spike model interpretation.

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