Sputtered ZnO-based buffer layer for band offset control in Cu(In,Ga)Se2 solar cells

On the Role of Interfaces in Planar‐Structured HC(NH2)2PbI3 Perovskite Solar Cells

“…However,t he 34.9 mm FAIs olution cannot further improvet he photovoltaic performance in spite of its larger size, probably due to the fact that the compact TiO 2 layer is not fully coveredb yt he large-sized FAPbI 3 ( Figure S2 in the Supporting Information). [23,24] It was observed from MAPbI 3 that absorption near the band gap increased with in-creasingM APbI 3 cuboid size. [20] This leads to low FF and V oc values.…”

Growth of amorphous Zn–Sn–O thin films by RF sputtering for buffer layers of CuInSe2 and SnS solar cells

“…Therefore, the current density tends to decrease because of carrier recombination within the CdS layer and the pn-interface. Alternative buffer layers with wide bandgap oxide semiconductors such as (Zn,Mg)O and (Zn,S)O have been proposed, and they have almost achieved efficiencies equivalent to those of CdS buffer layers [4][5][6]. However, these buffer layers still have some disadvantages including poor crystal quality and a lattice mismatch with photoabsorbing layers.…”

Structure of chemically deposited Zn(S,O,OH) buffer layer and the effects on the performance of Cu(in,Ga)Se2 solar cell

“…The thin buffer layer inserted between the p-CIGS and n-ZnO layers strongly affected the transportation of carriers generated in the CIGS layer [2,3], and the Zn(S,O,OH) layer has attracted increased attention as a buffer layer alternative to the conventional CdS buffer layer because of the wide bandgap energy and non-toxicity [4]. It has been previously demonstrated that the Zn(S,O,OH) layer can be prepared by a chemical bath deposition(CBD) [5] and sputtering techniques [6], and the CBD process has been used for the CdS preparation [7] in its industrial fabrication because of several advantages over the gas phase deposition processes.…”