2012 38th IEEE Photovoltaic Specialists Conference 2012
DOI: 10.1109/pvsc.2012.6317737
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Sputtered, oxygenated CdS window layers for higher current in CdS/CdTe thin film solar cells

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Cited by 33 publications
(25 citation statements)
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“…3,5,8,13 To optimize the buffer properties and to improve further device performance, a detailed understanding of the electronic and chemical structure is required. Soo et al 14 have shown the bulk of such films to consist of oxygen-free CdS nanocrystals and S−O complexes, which are speculated to be SO 3 2− and SO 4 2− complexes. To analyze the chemical structure of the S−O complexes in detail, X-ray photoelectron spectroscopy (XPS) and soft X-ray emission spectroscopy (XES) were used to study the speciesspecific composition of the surface and bulk, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…3,5,8,13 To optimize the buffer properties and to improve further device performance, a detailed understanding of the electronic and chemical structure is required. Soo et al 14 have shown the bulk of such films to consist of oxygen-free CdS nanocrystals and S−O complexes, which are speculated to be SO 3 2− and SO 4 2− complexes. To analyze the chemical structure of the S−O complexes in detail, X-ray photoelectron spectroscopy (XPS) and soft X-ray emission spectroscopy (XES) were used to study the speciesspecific composition of the surface and bulk, respectively.…”
Section: Introductionmentioning
confidence: 99%
“…The voltages of the two cells are similar, resulting in an improved efficiency from the CdS:O device. With similar fill factors, open circuit voltage, and improved current density; the PECSS source mimics improvements shown in creating CdS:O films with RF sputtering techniques.The PECSS process incorporated oxygen into the film to concentrations similar to Wu el al [4,5]. and increased cell efficiency by 1.2%.…”
mentioning
confidence: 84%
“…It is first utilized to widen the band gap of the window layer material (CdS) while simultaneously maintaining the rapid deposition rates of the original, non-plasma-assisted CSS process. In previous work by Wu et al and Kephart et al, high efficiency devices were generated by the addition of oxygen to the CdS [4,5]. Figure 1 shows the cross sectional geometry of a plasma source integrated into a CSS deposition source used at CSU [6,7].…”
Section: Introductionmentioning
confidence: 99%
“…All semiconductor processes were completed in the Advanced Research Deposition System (ARDS) described previously [3]. The back contact consists of carbon-and nickel-containing acrylic paints.…”
Section: Methodsmentioning
confidence: 99%
“…Without a buffer and with 90 nm CdS, collection efficiency appears to degrade, but no clear pinholes can be observed using a 405 nm laser. previously described [3]. The CdS layer thickness of the nine devices made on each substrate is estimated using the QE at 450 nm relative to maximum QE of the device in the substrate center.…”
Section: Methodsmentioning
confidence: 99%