Sputter Depth Profiling of Multiple Short-Period BN δ-Doped Si by Work Function Measurement

Mizuhara, Y.; Bungo, T.; Nagatomi, T.; Takai, Yoshizo

doi:10.1143/jjap.44.6289

Cited by 6 publications

(4 citation statements)

References 13 publications

(16 reference statements)

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“…It was confirmed that the electron-induced surface segregation of Sc at high temperature can be completely avoided by irradiation of primary electrons under these conditions [13]. Work function was measured at room temperature (RT) by the secondary-electron method [15][16][17][18][19]. In the secondary-electron method, work function is measured as a value relative to that of the reference, DU.…”

Section: Methodsmentioning

confidence: 84%

“…In the secondary-electron method, work function is measured as a value relative to that of the reference, DU. DU is obtained from the difference in the onset energy of secondary-electron spectra from the sample and reference surfaces, E sample ÀE ref , using DU = (E sample ÀE ref )/C corr , where C corr is the correction factor required for the precise measurement [15][16][17][18][19]. In the present study, a clean W(1 0 0) surface was used as the reference for the work function measurement, and all the value of work function, DU, is shown as a value relative to that of the clean W(1 0 0) surface.…”

Section: Methodsmentioning

confidence: 99%

See 1 more Smart Citation

Kinetics of surface atoms during phase transition of Sc–O/W(100) system at high temperature studied by Auger electron spectroscopy

Nakanishi¹,

Nagatomi²,

Takai³

2008

Surface Science

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Section: Methodsmentioning

confidence: 84%

Section: Methodsmentioning

confidence: 99%

Kinetics of surface atoms during phase transition of Sc–O/W(100) system at high temperature studied by Auger electron spectroscopy

Nakanishi¹,

Nagatomi²,

Takai³

2008

Surface Science

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“…The apparatus is equipped with a coaxial cylindrical mirror analyzer, an ion gun for sputter cleaning, a Sc evaporator, a sample holder with a heater, and a LEED system specially developed for the observation at high temperature as described below. 16 The work function was measured by the secondary electron method, [18][19][20][21][22] where the work function is measured as a value relative to that of the reference, ⌬⌽. The sample can be heated to approximately 1900 K, which is required for the flashing of the W͑100͒ surface, by electron bombardment using a W filament located behind the W͑100͒ disk.…”

Section: Methodsmentioning

confidence: 99%

In situ observation of change in surface atomic arrangement of Sc–O∕W(100) system during phase transition at high temperature

Nagatomi

Nakanishi

Takai

2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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In situ observation of low-energy electron diffraction (LEED) patterns during the phase transition of the Sc–O∕W(100) surface at high temperature was performed to investigate the correlation between the surface atomic arrangement, coverage of surface atoms, and work function during the phase transition. For this purpose, a LEED system enabling LEED observation at high temperatures of 1500–1900K was developed. The temperature dependence of the intensity of diffraction spots was measured, and the Debye temperatures were estimated for relevant surfaces. The changes in the intensity of diffraction spots during the phase transition were found to correlate with the changes in the coverage of surface atoms and work function. The present results revealed that surface phenomena such as surface segregation, oxidation, oxygen desorption, and diffusion of ScO complexes predominate the surface properties of the Sc–O∕W(100) system.

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“…Hereafter, we define the onset and cutoff energies of the spectrum as the minimum and maximum energies of the MDS spectrum. Because there is the difference in the vacuum level between the sample and spectrometer, the sample was negatively biased to detect all of low-energy electrons emitted from the sample surface [14,[27][28][29][30][31]. In such a measurement, the linearity of the energy scale should be confirmed when different sample biases are applied.…”

Section: Dependence Of Mds Spectra On Sample Biasmentioning

confidence: 99%

Investigation of Measurement Conditions of Metastable De-excitation Spectroscopy of MgO Thin Films Used for Plasma Display Panels

Yoshino

Morita

Nagatomi

et al. 2011

JSA

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The measurement conditions of metastable de-excitation spectroscopy (MDS) were investigated in order to apply MDS to the study of the electronic structure of MgO films used for plasma display panels (PDPs). It was demonstrated that positive charging induced on the surface of the MgO film of 50 nm thickness during the MDS measurement can be avoided by employing a low flux of primary metastable He atoms. The positive charges accumulated by successive MDS measurements were found to be completely removed by irradiation of keV electrons, in which the neutralization by the re-distribution of secondary electrons emitted by the keV electron irradiation plays an important role [J. Surf. Anal. 12, 284 (2005)]. The changes in the MDS spectra due to the heating treatment of the MgO film, which is one of the processes employed in the fabrication of PDPs, was investigated, and the ionization potential given as a sum of the band gap and the electron affinity was found to decrease with the increase in the heating temperature. Heating the MgO film at 500C in vacuum is effective to clean the surface but not sufficient to completely remove contaminations on the surface, and repeating sputtering and heating at 500C is required to clean the MgO film surface. The electronic structure of the clean surface of the MgO film of 50 nm thickness was found to be the same as that of 500 nm thickness, the thickness of which is a typical value for the MgO film used in PDPs. This result revealed that 50 nm thick MgO films, in which effects of charging is much less than those for 500 nm thick films, can be used to evaluate the electronic structure of the MgO film surface. The present results confirmed that MDS is one of the effective techniques to evaluate properties of MgO films used for PDPs.thering the improvement of PDPs, the reductions in the cost of manufacturing and the power consumption are strongly required, and they can be achieved by reducing the firing voltage of the discharge. The reduction in the firing voltage can be realized by increasing the ion-induced secondary electron (IISE) yield, , of a protective layer used in PDP cells [1]. The protective layer is

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Sputter Depth Profiling of Multiple Short-Period BN δ-Doped Si by Work Function Measurement

Cited by 6 publications

References 13 publications

Kinetics of surface atoms during phase transition of Sc–O/W(100) system at high temperature studied by Auger electron spectroscopy

Kinetics of surface atoms during phase transition of Sc–O/W(100) system at high temperature studied by Auger electron spectroscopy

In situ observation of change in surface atomic arrangement of Sc–O∕W(100) system during phase transition at high temperature

Investigation of Measurement Conditions of Metastable De-excitation Spectroscopy of MgO Thin Films Used for Plasma Display Panels

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