2010
DOI: 10.1016/j.tsf.2009.11.059
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Sputter deposition from a Ti2AlC target: Process characterization and conditions for growth of Ti2AlC

Abstract: Sputter deposition from a Ti 2 AlC target was found to yield Ti-Al-C films with a composition that deviates from the target composition of 2:1:1. For increasing substrate temperature from ambient to 1000 °C, the Al content decreased from 22 at% to 5 at%, due to re-evaporation. The C content in as-deposited films was equal to or higher than the Ti content. Mass spectrometry of the plasma revealed that the Ti and Al species were essentially thermalized, while a large fraction of C with energies >4 eV was detecte… Show more

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Cited by 83 publications
(63 citation statements)
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“…The same effects were demonstrated recently by combined experimental and simulation studies by Neidhardt et al [121] for sputtering from Ti-B targets of several compositions. These results also provide a possible reason for the apparent differences between sputtering from Ti 2 AlC and Cr 2 AlC targets [98,110,111], namely that the emission characteristics of the elements may vary depending on the target. This would not be surprising, since it is known that Ti 2 AlC and Cr 2 AlC have different bonding character [122,123,124,125,126].…”
mentioning
confidence: 79%
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“…The same effects were demonstrated recently by combined experimental and simulation studies by Neidhardt et al [121] for sputtering from Ti-B targets of several compositions. These results also provide a possible reason for the apparent differences between sputtering from Ti 2 AlC and Cr 2 AlC targets [98,110,111], namely that the emission characteristics of the elements may vary depending on the target. This would not be surprising, since it is known that Ti 2 AlC and Cr 2 AlC have different bonding character [122,123,124,125,126].…”
mentioning
confidence: 79%
“…Additionally, a substoichiometric TiC x buffer layer can be employed as a C sink, i.e., the excess C is accommodated by the buffer layer [113]. Deposition from a Ti 2 AlC target has also been shown to result in off-stoichiometric films, and the excess C can be compensated by addition of Ti [110,111].…”
Section: Sputtering With Compound Targetsmentioning
confidence: 99%
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