Sprayed FeWO4 thin film-based memristive device with negative differential resistance effect for non-volatile memory and synaptic learning applications

Patil, Arun; Dongale, Tukaram D.; Namade, Lahu D; Mohite, S.V.; Kim, Yeonho; Sutar, Santosh S.; Kamat, Rajanish K.; Rajpure, K.Y.

doi:10.1016/j.jcis.2023.03.189

Cited by 16 publications

(3 citation statements)

References 70 publications

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“…Some studies have achieved STDP simulation through pulse engineering . The STDP function could also be realized by employing a straightforward pulse sequence approach (inset on Figure d), which has been widely employed to achieve STDP in devices operating via mechanisms involving OV conductive wires. ,− Figure d presents the STDP property of the nanocomposite film device, which was trained by the inset sequence. The representation of synaptic weight change is defined as normalΔ w = ( G normala − G normalb G b ) × 100 , where G a and G b represent the device conductivity before and after pulse stimulation, respectively.…”

Section: Resultsmentioning

confidence: 99%

Enhanced Memristive Performance via a Vertically Heterointerface in Nanocomposite Thin Films for Artificial Synapses

Wang,

Sun,

Zhou

et al. 2024

ACS Appl. Mater. Interfaces

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Memristors can be used to mimic synaptic behavior in artificial neural networks, which makes them a key component in neuromorphic computing and holds promise for advancing the field. In this study, a memory artificial synaptic device based on ZnO−BaTiO 3 (ZnO−BTO) vertically aligned nanocomposite thin films was prepared. The vertical interface between the two phases can be used as a conduit for oxygen vacancy (OV) accumulation and a channel for OV movement, which greatly optimizes the resistive switching performance of the device and has the potential for multistage storage. By applying different pulse sequences to the device, the conductance of the device is adjusted from multiple angles, and a variety of synaptic functions are simulated, such as paired-pulse facilitation, spiketiming-dependent plasticity, short-term plasticity to long-term plasticity (STP−LTP), and long-term potentiation/depression (LTP/LTD). Finally, we construct a neural network for image recognition, and the recognition accuracy can reach 91%. Our study demonstrates the feasibility of using composite thin-film vertical interface to regulate the resistive performance of memristors and its great potential in artificial synaptic simulation and neuromorphic computing.

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Section: Resultsmentioning

confidence: 99%

Enhanced Memristive Performance via a Vertically Heterointerface in Nanocomposite Thin Films for Artificial Synapses

Wang,

Sun,

Zhou

et al. 2024

ACS Appl. Mater. Interfaces

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“…Digital memristors typically have a filamentary switching mechanism, while analog devices have a non-filamentary one based on an interfacial switching mechanism [11,13]. Depending on their unique resistive switching properties, such as volatile or non-volatile and digital or analog behavior, memristors are utilized for various use-cases such as image processing [14,15], sensing of OH − species [16][17][18], memory [19][20][21][22] or neuromorphic computing [23][24][25][26][27][28].…”

Section: Introductionmentioning

confidence: 99%

Electrolyte Influence on Properties of Ultra-Thin Anodic Memristors on Titanium

Knapic,

Atanasova,

Zrinski

et al. 2024

Coatings

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Titanium anodic memristors were prepared in phosphate buffer (PB) and citrate buffer (CB) electrolytes. Studying their I-U sweeps, the memristors presented self-rectifying and volatile behaviors. Transmission electron microscopic analysis revealed crystalline protrusions inside a semi-crystalline Ti oxide. Grounded in this, a hybrid interfacial memristive switching mechanism relaying on partial filaments was proposed. Moreover, both analyzed memristor types demonstrated multilevel switching capabilities. The memristors anodized in the PB and CB showed high-to-low resistance ratios of 4 × 104 and 1.6 × 102, respectively. The observed (more than two order of magnitude) ratio improvement of the PB memristors suggests their better performance, in spite of their modestly high resistive state instabilities, attributed to the thermal stress caused by consecutive switching. The endurance and retention of both the PB and CB memristors was measured over up to 106 cycles, indicating very good lifetimes. Phosphate incorporation into the anodic oxide was confirmed by photoelectron spectroscopy analysis and was related to the improved memristive behavior of the PB sample. The presence of phosphate inside the memristively active layer modifies the availability of free O species (vacancies and ions) in the oxide. Taking all this into consideration, Ti anodic memristors anodized in PB are emphasized as candidates for neuromorphic computing.

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“…The switching mechanism of digital memristors is usually filamentary, while analogue ones may have either filamentary, with parallel filaments defining the resistive levels [ 4 , 5 ], or nonfilamentary mechanisms, based on an interfacial switching mechanism [ 6 ]. With its unique volatile or non-volatile resistive switching behaviour, this circuit element (the fourth most common apart from the inductor, capacitor, and resistor) can be used in a variety of modern applications such as memory devices [ 7 , 8 , 9 , 10 , 11 , 12 , 13 ], sensing [ 14 , 15 , 16 ], image processing [ 17 , 18 ], and neuromorphic computing [ 19 , 20 , 21 ].…”

Section: Introductionmentioning

confidence: 99%

Interfacial Resistive Switching of Niobium–Titanium Anodic Memristors with Self-Rectifying Capabilities

Knapic,

Minenkov,

Atanasova

et al. 2024

Nanomaterials

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A broad compositional range of Nb-Ti anodic memristors with volatile and self-rectifying behaviour was studied using a combinatorial screening approach. A Nb-Ti thin-film combinatorial library was co-deposited by sputtering, serving as the bottom electrode for the memristive devices. The library, with a compositional spread ranging between 22 and 64 at.% Ti was anodically oxidised, the mixed oxide being the active layer in MIM-type structures completed by Pt discreet top electrode patterning. By studying I–U sweeps, memristors with self-rectifying and volatile behaviour were identified. Moreover, all the analysed memristors demonstrated multilevel properties. The best-performing memristors showed HRS/LRS (high resistive state/low resistive state) ratios between 4 and 6 × 105 and very good retention up to 106 successive readings. The anodic memristors grown along the compositional spread showed very good endurance up to 106 switching cycles, excluding those grown from alloys containing between 31 and 39 at.% Ti, which withstood only 10 switching cycles. Taking into consideration all the parameters studied, the Nb-46 at.% Ti composition was screened as the parent metal alloy composition, leading to the best-performing anodic memristor in this alloy system. The results obtained suggest that memristive behaviour is based on an interfacial non-filamentary type of resistive switching, which is consistent with the performed cross-sectional TEM structural and chemical characterisation.

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Sprayed FeWO4 thin film-based memristive device with negative differential resistance effect for non-volatile memory and synaptic learning applications

Cited by 16 publications

References 70 publications

Enhanced Memristive Performance via a Vertically Heterointerface in Nanocomposite Thin Films for Artificial Synapses

Enhanced Memristive Performance via a Vertically Heterointerface in Nanocomposite Thin Films for Artificial Synapses

Electrolyte Influence on Properties of Ultra-Thin Anodic Memristors on Titanium

Interfacial Resistive Switching of Niobium–Titanium Anodic Memristors with Self-Rectifying Capabilities

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