Spray pyrolysis of ZnO–TFTs utilizing a perfume atomizer

Ortel, Marlis; Trostyanskaya, Yulia Sergeeva; Wagner, Veit

doi:10.1016/j.sse.2013.04.003

Cited by 23 publications

(10 citation statements)

References 17 publications

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“…The quality of In 2 O 3 layers grown via spray pyrolysis is known to depend on the substrate material and its temperature as well as on the precursor formulation employed . At adequately high deposition temperatures, researchers have observed and exploited a phenomenon called the Leidenfrost effect .…”

Section: Introductionmentioning

confidence: 99%

Exploring the Leidenfrost Effect for the Deposition of High‐Quality In₂O₃ Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

Isakov

Faber

Grell

et al. 2017

Adv Funct Materials

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The growth mechanism of indium oxide (In 2 O 3 ) layers processed via spray pyrolysis of an aqueous precursor solution in the temperature range of 100-300 °C and the impact on their electron transporting properties are studied. Analysis of the droplet impingement sites on the substrate's surface as a function of its temperature reveals that Leidenfrost effect dominated boiling plays a crucial role in the growth of smooth, continuous, and highly crystalline In 2 O 3 layers via a vapor phase-like process. By careful optimization of the precursor formulation, deposition conditions, and choice of substrate, this effect is exploited and ultrathin and exceptionally smooth layers of In 2 O 3 are grown over large area substrates at temperatures as low as 252 °C. Thin-film transistors (TFTs) fabricated using these optimized In 2 O 3 layers exhibit superior electron transport characteristics with the electron mobility reaching up to 40 cm 2 V −1 s −1 , a value amongst the highest reported to date for solution-processed In 2 O 3 TFTs. The present work contributes enormously to the basic understanding of spray pyrolysis and highlights its tremendous potential for large-volume manufacturing of high-performance metal oxide thin-film transistor electronics.

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Section: Introductionmentioning

confidence: 99%

Exploring the Leidenfrost Effect for the Deposition of High‐Quality In₂O₃ Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

Isakov

Faber

Grell

et al. 2017

Adv Funct Materials

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show abstract

“…The miniaturization of electronic devices has proven to be essential, while the gas sensor field is still lagging behind the overall progress of CMOS and MEMS devices. Two materials have been proven to exhibit all of the properties required for a good gas sensing performance, namely zinc oxide (ZnO) [ 11 – 14 ] and tin oxide (SnO 2 ) [ 15 – 17 ], while others, such as indium tin oxide (ITO), In 2 O 3 , CdO, ZnSnO 4 , NiO, etc. , have also been widely studied [ 13 ].…”

Section: Introductionmentioning

confidence: 99%

Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors

Filipovic

Selberherr

2015

Sensors

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The integration of gas sensor components into smart phones, tablets and wrist watches will revolutionize the environmental health and safety industry by providing individuals the ability to detect harmful chemicals and pollutants in the environment using always-on hand-held or wearable devices. Metal oxide gas sensors rely on changes in their electrical conductance due to the interaction of the oxide with a surrounding gas. These sensors have been extensively studied in the hopes that they will provide full gas sensing functionality with CMOS integrability. The performance of several metal oxide materials, such as tin oxide (SnO2), zinc oxide (ZnO), indium oxide (In2O3) and indium-tin-oxide (ITO), are studied for the detection of various harmful or toxic cases. Due to the need for these films to be heated to temperatures between 250 °C and 550 °C during operation in order to increase their sensing functionality, a considerable degradation of the film can result. The stress generation during thin film deposition and the thermo-mechanical stress that arises during post-deposition cooling is analyzed through simulations. A tin oxide thin film is deposited using the efficient and economical spray pyrolysis technique, which involves three steps: the atomization of the precursor solution, the transport of the aerosol droplets towards the wafer and the decomposition of the precursor at or near the substrate resulting in film growth. The details of this technique and a simulation methodology are presented. The dependence of the deposition technique on the sensor performance is also discussed.

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“…The growth model given in (6) relates the thickness of the deposited material to the applied time and temperature. However, this representation is only valid, when no complex geometries such as deep wells, trenches, and step structures are present.…”

Section: B Spray Pyrolysis Deposition Of Tin Oxidementioning

confidence: 99%

“…Recent discoveries in the use of metal oxides as gas sensing materials are at the forefront for enabling significant progress in moving away from bulky sensor architectures [1], [2], [3], [4], [5]. Two materials have been validated to exhibit all the properties required for a good gas sensing performance, namely zinc oxide (ZnO) [6], [7] and tin oxide (SnO 2 ) [8], [9], [10], while others such as indium tin oxide (ITO), In 2 O 3 , CdO, ZnSnO 4 , NiO, etc. have also been widely studied [11].…”

Section: Introductionmentioning

confidence: 99%

Processing of integrated gas sensor devices

Filipovic

Selberherr

2015

TENCON 2015 - 2015 IEEE Region 10 Conference

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The integration of gas sensor components into wearable electronics will provide individuals the ability to detect harmful chemicals and pollutants in the environment. The key to this integration is the development of processing techniques for the fabrication of sensor components which can be incorporated into the conventional CMOS fabrication sequence. This includes the etching required for the formation of a suspended membrane on top of which the microheater and sensing layer are placed and the deposition of the metal oxide sensing layer itself. Recently, spray pyrolysis has been investigated as a possible metal oxide deposition approach which is economical, easy to implement, and provides good step coverage for trench geometries. This work investigates wet chemical etching and plasma etching techniques for the generation of a suspended membrane and the spray pyrolysis and sputtering techniques for the deposition of a tin oxide gas sensing layer.

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Spray pyrolysis of ZnO–TFTs utilizing a perfume atomizer

Cited by 23 publications

References 17 publications

Exploring the Leidenfrost Effect for the Deposition of High‐Quality In₂O₃ Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

Exploring the Leidenfrost Effect for the Deposition of High‐Quality In₂O₃ Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors

Processing of integrated gas sensor devices

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Spray pyrolysis of ZnO–TFTs utilizing a perfume atomizer

Cited by 23 publications

References 17 publications

Exploring the Leidenfrost Effect for the Deposition of High‐Quality In2O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

Exploring the Leidenfrost Effect for the Deposition of High‐Quality In2O3 Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

Performance and Stress Analysis of Metal Oxide Films for CMOS-Integrated Gas Sensors

Processing of integrated gas sensor devices

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About

Exploring the Leidenfrost Effect for the Deposition of High‐Quality In₂O₃ Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors

Exploring the Leidenfrost Effect for the Deposition of High‐Quality In₂O₃ Layers via Spray Pyrolysis at Low Temperatures and Their Application in High Electron Mobility Transistors