Spontaneous resistance switching and low-frequency noise in quantum point contacts

Dekker, Cees; Scholten, A.J.; Liefrink, F.; Eppenga, R.; Houten, H. van; Foxon, C.T.

doi:10.1103/physrevlett.66.2148

Cited by 97 publications

(65 citation statements)

References 12 publications

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“…The distribution function P (T ) must be used now to average expressions (40) and (57) over impurity configurations. Direct calculation confirms Eq.…”

Section: Metallic Diffusive Wiresmentioning

confidence: 99%

Shot noise in mesoscopic conductors

2000

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Theoretical and experimental work concerned with dynamic fluctuations has developed into a very active and fascinating subfield of mesoscopic physics. We present a review of this development focusing on shot noise in small electric conductors. Shot noise is a consequence of the quantization of charge. It can be used to obtain information on a system which is not available through conductance measurements. In particular, shot noise experiments can determine the charge and statistics of the quasiparticles relevant for transport, and reveal information on the potential profile and internal energy scales of mesoscopic systems. Shot noise is generally more sensitive to the effects of electron-electron interactions than the average conductance. We present a discussion based on the conceptually transparent scattering approach and on the classical Langevin and BoltzmannLangevin methods; in addition a discussion of results which cannot be obtained by these methods is provided. We conclude the review by pointing out a number of unsolved problems and an outlook on the likely future development of the field.

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“…The distribution function P (T ) must be used now to average expressions (40) and (57) over impurity configurations. Direct calculation confirms Eq.…”

Section: Metallic Diffusive Wiresmentioning

confidence: 99%

Shot noise in mesoscopic conductors

2000

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“…The low band gap energy of Al 0.1 Ga 0. 9 As does however make the Schottky barrier more transparent, which might explain why REG4 is much more noisy than REG5,6 for the same V G .…”

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confidence: 99%

“…Several charge switching sites have been proposed, either near the 2DEG [9,10,11] or in the remote impurity layer [8,16,17] and more specifically the DX centers [13]. The charge switching process has been attributed to electron hopping between trap and 2DEG [9,10,11], electrons leaking from the split gates through the Schottky barrier [12,15] or (thermally activated) switching between different sites or configurations within the impurity layer [8,13,16,17]. Trapping of 2DEG carriers can be excluded as the dominant mechanism since 2DEG density fluctuations are too small [16,17].…”

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confidence: 99%

“…Charge noise has been studied both locally by monitoring conductance fluctuations in a quantum point contact (QPC) or quantum dot [7,8,9,10,11,12,13,14,15,16], and on a macroscopic scale using resistance fluctuations in Hall bar structures [16,17,18]. Several charge switching sites have been proposed, either near the 2DEG [9,10,11] or in the remote impurity layer [8,16,17] and more specifically the DX centers [13].…”

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confidence: 99%

See 1 more Smart Citation

InSituReduction of Charge Noise inGaAs/AlxGa1−x
Buizert
¹
,
Koppens
²
,
Pioro‐Ladrière
³

et al. 2008
Phys. Rev. Lett.
86
5
101
2
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“…A natural physical explanation is stochastic occupation of charge traps analogous to the mechanism leading to the 1/f 1/2 voltage noise pertinent to metal-oxide-semiconductor field-effect transistor ͑MOSFETs͒. 11,14,15 Alternatively, in SET devices, the 1/f ␣ noise may be due to externally induced charge fluctuations caused by spurious environmental electrical noise and electromagnetic radiation, and in particular, photon assisted tunneling and/or charge detrapping induced by the thermal radiation emitted from the T e ϭ4.2 K parts of the dilution refrigerator. 16 This radiation is in the frequency range up to k B T e /hϷ90 GHz, where k B is Boltzmann's constant, and h is Planck's constant.…”

Section: Introductionmentioning

confidence: 99%

Low-frequency noise in single electron tunneling transistor

Tavkhelidze

Mygind

1998

Journal of Applied Physics

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The noise in current biased aluminium single electron tunneling ͑SET͒ transistors has been investigated in the frequency range of 5 mHzϽ f Ͻ30 Hz. A refined high frequency ͑HF͒ shielding including resistive coaxial lines, that prevents spurious electromagnetic radiation and especially high energy photons emitted by the 4.2 K environment from reaching the sample, allows us to study a given background charge configuration for many hours below Ϸ100 mK. The noise at relatively high frequencies originates from internal ͑presumably thermal equilibrium͒ charge fluctuations. For f у10 Hz, we find the same input charge noise, typically Q N ϭ5ϫ10 Ϫ4 e/Hz 1/2 at 10 Hz, with and without the HF shielding. At lower frequencies, the noise is due to charge trapping, and the voltage noise pattern superimposed on the V(V g ) curve ͑voltage across transistor versus gate voltage͒ strongly depends on the background charge configuration resulting from the cooling sequence and eventual radio frequency ͑rf͒ irradiation. The measured noise spectra which show both 1/f and 1/f 1/2 dependencies and saturation for f Ͻ100 mHz can be fitted by two-level fluctuators with DebyeLorentzian spectra and relaxation times of order seconds. In some cases, the positive and negative slopes of the V(V g ) curve have different overlaid noise patterns. For fixed bias on both slopes, we measure the same noise spectrum, and believe that the asymmetric noise is due to dynamic charge trapping near or inside one of the junctions induced when ramping the junction voltage. Dynamic trapping may limit the high frequency applications of the SET transistor. Also reported on are the effects of rf irradiation and the dependence of the SET transistor noise on bias voltage.

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Spontaneous resistance switching and low-frequency noise in quantum point contacts

Cited by 97 publications

References 12 publications

Shot noise in mesoscopic conductors

Shot noise in mesoscopic conductors

InSituReduction of Charge Noise inGaAs/AlxGa1−x
Buizert
¹
,
Koppens
²
,
Pioro‐Ladrière
³

et al. 2008
Phys. Rev. Lett.
86
5
101
2
View full text Add to dashboard Cite

Low-frequency noise in single electron tunneling transistor

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Spontaneous resistance switching and low-frequency noise in quantum point contacts

Cited by 97 publications

References 12 publications

Shot noise in mesoscopic conductors

Shot noise in mesoscopic conductors

InSituReduction of Charge Noise inGaAs/AlxGa1−xBuizert1, Koppens2, Pioro‐Ladrière3 et al. 2008Phys. Rev. Lett.8651012View full textAdd to dashboardCite

Low-frequency noise in single electron tunneling transistor

Contact Info

Product

Resources

About

InSituReduction of Charge Noise inGaAs/AlxGa1−x
Buizert
¹
,
Koppens
²
,
Pioro‐Ladrière
³

et al. 2008
Phys. Rev. Lett.
86
5
101
2
View full text Add to dashboard Cite