We report low temperature electronic transport results on the fractional quantum Hall effect of composite fermions at Landau level filling = 4/11 in a very high mobility and low density sample. Measurements were carried out at temperatures down to 15mK, where an activated magnetoresistance R xx and a quantized Hall resistance R xy , within 1% of the expected value of h/(4/11)e 2 , were observed. The temperature dependence of the R xx minimum at 4/11 yields an activation energy gap of ~ 7 mK. Developing Hall plateaus were also observed at the neighboring states at = 3/8 and 5/13. . In this high-quality low-density sample, we observed at =4/11 activated magnetoresistance R xx and quantized Hall resistance R xy , with the quantization better than 1%. Our results thus confirm that the 4/11 state is a true FQHE state. The temperature dependence of the R xx minimum at 4/11 yields an activation energy gap of ~7 mK.The sample consists of a 50 nm wide modulation-doped GaAs/AlGaAs quantum well (QW) and has a size of about 5 mm × 5 mm. The QW is delta-doped with silicon from both sides at a distance of ~ 220 nm. Electrical contacts to the two-dimensional electron system (2DES) are accomplished by rapid thermal annealing of indium beats along the edge. The electron density of n = 1.17×10 11 cm -2 and the mobility of = 11.6×10 6 cm 2 /Vs were achieved after illumination of the sample at low temperatures by a red-lightemitting diode. A self-consistent calculation shows that at this density only one electric subband is occupied. All measurements were carried out in a dilution refrigerator with the lowest base temperature of ~ 15 mK. Low-frequency (~ 7Hz) lock-in amplifier techniques were utilized to measure R xx and R xy . The excitation current was normally 2 or 5 nA. Figure 1 shows the R xx and R xy traces in a large B magnetic field range from 5 to 14T.Well-developed FQHE are observed at = 2/3, 2/5, etc. Signatures of high-order FQHE states are observed up to 11/21 around 1/2, consistent with the ultra-high quality of this specimen.In the field range between 1/3 and 2/5, similar to our previous work [12], developing FQHE states are observed at Landau level filling fractions = 4/11, 5/13, 3/8, and 6/17.Examining the Hall resistance, clearly, a plateau is formed at 4/11, with the quantization value of 2.725×h/e 2 , within 1% of the expected value of 2.75×h/e 2 for the 4/11 state.Moreover, as shown in Fig. 3(a), the R xx at 4/11 displays an activated behavior. Its value increases with increasing temperatures. These two observations, quantized Hall resistance and activated magnetoresistance, confirm that indeed the 4/11 state is a true fractional 4 quantum Hall effect. Developing Hall plateaus are also seen at filling factors 5/13 and 3/8. There is no visible feature in the Hall resistance around 6/17, consistent with a very weak minimum observed there. In fact, the 6/17 state is barely visible at the lowest temperature of 15 mK, as shown in Fig. 3(a). It becomes stronger as T increases. This observation, i.e., the a...