Polyhedral
boron clusters are lauded as 3D aromatics
that frequently
form interconnected periodic networks resulting in boron-rich borides
with metal and non-metals having high thermodynamic stability and
hardness. This leads to the question of whether the spherical delocalization
of electrons in these clusters is extended across the network as in
organic aromatic networks. These borides also frequently show partial
oxidation, having fewer electrons than what is mandated by electron
counting rules, whose impact on their aromatic stability and geometry
remains mysterious. Understanding of the nature of electronic communication
between polyhedra in polyhedral borides is largely unknown, though
it is crucial for the rational design of advanced materials with desirable
mechanical, electronic, and optical properties. Here, we show that
electronic delocalization across polyhedral clusters has a significant
impact on their structure and stability. Our computational inquiry
of closo borane dimers shows substantial variation
in conjugation with the ideal electron count. Upon two-electron oxidation,
instead of forming exohedral multiple bonding that disrupts the aromaticity,
it undergoes subtle geometric transformations that conserve aromaticity.
The nature of geometric transformation depends on the highest occupied
molecular orbital (HOMO) that is decided locally on the polyhedral
degree of the interacting vertices. The prevalence of π-type
interactions as the HOMO in tetravalent vertices encourages conjugation
across clusters and turns into a macropolyhedral system hosting a
rhombic linkage between clusters upon oxidation. In contrast, the
σ-type interactions dominate the HOMO of pentavalent vertices
that prefer to confine aromaticity within the polyhedra by separating
them with localized 3c–2e bonds. Our findings expose the fundamental
bonding principles that govern the interaction between boron clusters
and will provide the chemical guidance for the design and analysis
of polyhedral boride networks with desired properties.