Spontaneous emission control of single quantum dots in bottom-up nanowire waveguides

Bulgarini, Gabriele; Reimer, Michael E.; Zehender, Tilman; Hocevar, Moïra; Bakkers, Erik P. A. M.; Kouwenhoven, Leo P.; Zwiller, Valéry

doi:10.1063/1.3694935

Cited by 77 publications

(87 citation statements)

References 16 publications

(24 reference statements)

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“…26 This approach ensures that a single emitter is located exactly on the wire axis, but also potentially changes the nature of the QD dipole. In the InAsP/InP system, a pronounced SE inhibition was observed in thin wires, 18 strongly supporting a transverse dipole orientation. 14 Interestingly enough, II-VI QDs defined in thin nanowire display a fast decay dynamics.…”

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confidence: 93%

“…In contrast, for thin wires defined along the dot growth axis, all dipole components simultaneously experience a strong SE inhibition and inhibition factors that exceed ten have been reported. 14,18 The polarization analysis sheds a complementary light on the anisotropy in the coupling to free-space modes. Indeed, when the emitter is simultaneously coupled to k and ?…”

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confidence: 99%

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Quantum dot spontaneous emission control in a ridge waveguide

Stepanov

Delga

Zang

et al. 2015

Applied Physics Letters

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International audienceWe investigate the spontaneous emission (SE) of self-assembled InAs quantum dots (QDs) embedded in GaAs ridge waveguides that lay on a low index substrate. In thin enough waveguides, the coupling to the fundamental guided mode is vanishingly small. A pronounced anisotropy in the coupling to non-guided modes is then directly evidenced by normal-incidence photoluminescence polarization measurements. In this regime, a measurement of the QD decay rate reveals a SE inhibition by a factor up to 4. In larger wires, which ensure an optimal transverse confinement of the fundamental guided mode, the decay rate approaches the bulk value. Building on the good agreement with theoretical predictions, we infer from calculations the fraction β of SE coupled to the fundamental guided mode for some important QD excitonic complexes. For a charged exciton (isotropic in plane optical dipole), β reaches 0.61 at maximum for an on-axis QD. In the case of a purely transverse linear optical dipole, β increases up to 0.91. This optimal configuration is achievable through the selective excitation of one of the bright neutral excitons

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confidence: 93%

mentioning

confidence: 99%

Quantum dot spontaneous emission control in a ridge waveguide

Stepanov

Delga

Zang

et al. 2015

Applied Physics Letters

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“…The PL decay curves of the NW in the grooved waveguide at each step are shown in Fig. 4b Although the inhibited spontaneous emission in NWs has been reported by many groups 37,38 , there has been very little work on Purcell enhancement observation for NWs.…”

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confidence: 99%

Movable high-Q nanoresonators realized by semiconductor nanowires on a Si photonic crystal platform

Birowosuto¹,

Yokoo²,

et al. 2014

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Sub-wavelength semiconductor nanowires have been attracting strong interest recently for photonic applications because they possess various unique optical properties and offer great potential for miniaturizing devices. However, with these nanowires, it is not easy to realize tight light confinement or efficient coupling with photonic circuits. Here we show that a high Q nanocavity can be created by placing a single III/V semiconductor nanowire with the diameter less than 100 nm in a grooved waveguide in a Si photonic crystal, and employing nanoprobe manipulation. We have observed very fast spontaneous emission (91 ps) from nanowires accelerated by the strong Purcell enhancement in nanocavities, which proves that unprecedented strong light confinement can be achieved in nanowires. Furthermore, this unique system enables us to move the nanocavity anywhere along the waveguide. This configuration provides us tremendous flexibility in integrated photonics because we can add and displace various functionalities of III/V nanocavity devices in Si photonic circuits.

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“…[1][2][3][4][5][6][7][8][9] The integration of QDs in one-dimensional crystals (nanowires, NWs) has increasingly gained interest because of the improvement in the photon extraction efficiency and overall functionality. [10][11][12][13][14][15][16][17][18][19] Recently, it has been shown that self-segregation processes in ternary Al x Ga 1Àx As shells lead to the observation of luminescence stemming from 3D confined excitons. Several high-resolution imaging methods have demonstrated that the Al x Ga 1Àx As shells are indeed not homogeneous and contain nanoscale Ga-rich islands.…”

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confidence: 99%

Quantum dots in the GaAs/AlxGa1−xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness

Francaviglia

Fontana

Conesa‐Boj

et al. 2015

Applied Physics Letters

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Quantum dots (QDs) embedded in nanowires represent one of the most promising technologies for applications in quantum photonics. Self-assembled bottom-up fabrication is attractive to overcome the technological challenges involved in a top-down approach, but it needs post-growth investigations in order to understand the self-organization process. We investigate the QD formation by selfsegregation in Al x Ga 1Àx As shells as a function of thickness and cross-section morphology. By analysing light emission from several hundreds of emitters, we find that there is a certain thickness threshold for the observation of the QDs. The threshold becomes smaller if a thin AlAs layer is pre-deposited between the GaAs nanowire core and the Al x Ga 1Àx As shell. Our results evidence the development of the quantum emitters during the shell growth and provide more guidance for their use in quantum photonics. V C 2015 AIP Publishing LLC. [http://dx

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Spontaneous emission control of single quantum dots in bottom-up nanowire waveguides

Cited by 77 publications

References 16 publications

Quantum dot spontaneous emission control in a ridge waveguide

Quantum dot spontaneous emission control in a ridge waveguide

Movable high-Q nanoresonators realized by semiconductor nanowires on a Si photonic crystal platform

Quantum dots in the GaAs/AlxGa1−xAs core-shell nanowires: Statistical occurrence as a function of the shell thickness

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