Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures

Sharma, Chithra H.; Thalakulam, Madhu

doi:10.1038/s41598-017-00857-7

Cited by 14 publications

(12 citation statements)

References 30 publications

(46 reference statements)

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“…[ 262 ] In addition to TFT, heterostructures fabricated by 2D materials are also widely used in electronic devices such as Schottky diodes, field‐effect transistors, and floating‐gate memory devices. [ 263–267 ] Toward the ultrathin flexible memory application, the nonvolatile resistance switching phenomenon in monolayer h‐BN was investigated in 2019. [ 268 ] The electrodes are fabricated on the top and bottom of 2D h‐BN to form metal–insulator–metal (MIM) configuration.…”

Section: Applications Of 2d Iii‐nitride Materialsmentioning

confidence: 99%

2D III‐Nitride Materials: Properties, Growth, and Applications

et al. 2021

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2D III‐nitride materials have been receiving considerable attention recently due to their excellent physicochemical properties, such as high stability, wide and tunable bandgap, and magnetism. Therefore, 2D III‐nitride materials can be applied in various fields, such as electronic and photoelectric devices, spin‐based devices, and gas detectors. Although the developments of 2D h‐BN materials have been successful, the fabrication of other 2D III‐nitride materials, such as 2D h‐AlN, h‐GaN, and h‐InN, are still far from satisfactory, which limits the practical applications of these materials. In this review, recent advances in the properties, growth methods, and potential applications of 2D III‐nitride materials are summarized. The properties of the 2D III‐nitride materials are mainly obtained by first‐principles calculations because of the difficulties in the growth and characterizations of these materials. The discussion on the growth of 2D III‐nitride materials is focused on 2D h‐BN and h‐AlN, as the developments of 2D h‐GaN and h‐InN are yet to be realized. Therefore, applications have been realized mostly based on the 2D h‐BN materials; however, many potential applications are cited for the entire range of 2D III‐nitride materials. Finally, future research directions and prospects in this field are also discussed.

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Section: Applications Of 2d Iii‐nitride Materialsmentioning

confidence: 99%

2D III‐Nitride Materials: Properties, Growth, and Applications

et al. 2021

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“…An all two-dimensional (2D) architecture involving vertical integration of van der Waals (vW) materials has been explored as a platform for the future semiconductor technology 1 – 3 . Hybrid devices consisting of physically stacked layers of MoS 2 and other vW materials has also been explored for various device applications; MoS 2 /Graphene interfaces for improved electrical contacts 4 , 5 , MoS 2 /h-BN hybrid systems for mobility engineering 3 , 5 and electrostatic confinement 6 – 8 , MoS 2 /WSe 2 PN-junction devices 2 have been reported. Rather than stacking, a lateral monolithic integration of regions with different electrical properties while preserving the two-dimensionality is an important ingredient for future microelectronics technology.…”

Section: Introductionmentioning

confidence: 99%

Stable and scalable 1T MoS2 with low temperature-coefficient of resistance

Sharma

Surendran

Varghese

et al. 2018

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Monolithic realization of metallic 1T and semiconducting 2H phases makes MoS2 a potential candidate for future microelectronic circuits. A method for engineering a stable 1T phase from the 2H phase in a scalable manner and an in-depth electrical characterization of the 1T phase is wanting at large. Here we demonstrate a controllable and scalable 2H to 1T phase engineering technique for MoS2 using microwave plasma. Our method allows lithographically defining 1T regions on a 2H sample. The 1T samples show excellent temporal and thermal stability making it suitable for standard device fabrication techniques. We conduct both two-probe and four-probe electrical transport measurements on devices with back-gated field effect transistor geometry in a temperature range of 4 K to 300 K. The 1T samples exhibit Ohmic current-voltage characteristics in all temperature ranges without any dependence to the gate voltage, a signature of a metallic state. The sheet resistance of our 1T MoS2 sample is considerably lower and the carrier concentration is a few orders of magnitude higher than that of the 2H samples. In addition, our samples show negligible temperature dependence of resistance from 4 K to 300 K ruling out any hoping mediated or activated electrical transport.

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“…van der Waals (vW) materials, highly crystalline naturally confined 2D systems in the few-layer limit, have recently become the ubiquitous choice for exploring various quantum phenomena [7][8][9][10][11] . Among the vW materials, transitional metal dichalcogenides (TMDCs), especially MoS2, have shown potential as a platform for hosting mesoscopic quantum devices such as quantum point contacts and quantum dots 8,9,12 . Coherent electrical transport, quantum oscillations, charge and conductance quantization, weak localization etc., have been observed in MoS2 [7][8][9][10][11] .…”

Section: Introductionmentioning

confidence: 99%

2D superconductivity and vortex dynamics in 1T-MoS2

et al. 2018

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Two-dimensional (2D) superconductivity is a fascinating phenomenon packed with rich physics and wide technological application. The vortices and their dynamics arising from classical and quantum fluctuations give rise to Berezinskii-Kosterlitz-Thouless (BKT) transition and 2D Bose metallic phase both of which are of fundamental interest. In 2D, observation of superconductivity and the associated phenomena are sensitive to material disorders. Highly crystalline and inherently 2D van der Waals (vW) systems with carrier concentration and conductivity approaching metallic regime have been a potential platform. The metallic 1T phase of MoS2, a widely explored vW material system controllably, engineered from the semiconducting 2H phase, is a tangible choice. Here, we report the observation of 2D superconductivity accompanied by BKT transition and Bose metallic state in a few-layer 1T-MoS2. Structural characterization shows excellent crystallinity over extended lateral dimension. The electrical characterization confirms the metallic nature down to 4 K and a transition to a superconducting state below 1.2 K with a Tc ~ 920 mK. The 2D nature of the superconducting state is confirmed from the magneto-transport anisotropy against field orientations and the presence of BKT transition. In addition, our sample showcases a manifold increase in the parallel upper-critical-field above the Pauli limit. The inherent twodimensionality and possibility of scalably engineering semiconducting, metallic and superconducting phases makes MoS2 a potential candidate for hosting monolithic all-twodimensional hybrid quantum devices.

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Split-gated point-contact for electrostatic confinement of transport in MoS2/h-BN hybrid structures

Cited by 14 publications

References 30 publications

2D III‐Nitride Materials: Properties, Growth, and Applications

2D III‐Nitride Materials: Properties, Growth, and Applications

Stable and scalable 1T MoS2 with low temperature-coefficient of resistance

2D superconductivity and vortex dynamics in 1T-MoS2

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