Split Ga vacancies and the unusually strong anisotropy of positron annihilation spectra in 
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Karjalainen, Antti; Prozheeva, Vera; Simula, Kristoffer; Makkonen, Ilja; Callewaert, Vincent; Varley, Joel B.; Tuomisto, Filip

doi:10.1103/physrevb.102.195207

Cited by 42 publications

(54 citation statements)

References 55 publications

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“…Moreover, recent positron annihilation spectroscopy results 45 suggest that as-grown β-Ga 2 O 3 single crystals can contain considerable concentrations of shifted V Ga , which is consistent with the 2 H concentration-depth profiles shown in Figure 1. To investigate this further, we have calculated binding energies for several H-related defect complexes using the Heyd-Scuseria-Ernzerhof (HSE) hybrid functional 46 and the project augmented-wave method, [47][48][49] as implemented in the Vienna Ab initio Simulation Package (VASP) code.…”

Section: Please Cite This Articlesupporting

confidence: 85%

Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals

Reinertsen

Weiser

Frodason

et al. 2020

Applied Physics Letters

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The effect of lattice anisotropy on the diffusion of hydrogen (H)/deuterium ( 2 H) in β-Ga 2 O 3 was investigated using secondary ion mass spectrometry (SIMS) and hybridfunctional calculations. Concentration-depth profiles of 2 H-implanted single crystals show that 2 H can diffuse along the direction perpendicular to the (010) surface at temperatures as low as 300°C, whereas diffusion along the direction perpendicular to the (-201) surface occurs only around 500°C. For both directions, the evolution of the 2 H concentration-depth profiles after heat treatments can be modeled by traplimited diffusion. Moreover, the traps can be present in the as-received crystals or created during ion implantation. Comparison of the experimentally-obtained binding energy for 2 H to the trap (2.3 ± 0.2 eV) with the binding energies determined from first-principles calculations suggests that intrinsic point defects (e.g., V ib Ga ) or defect complexes (e.g., V Ga(2) V O(2) ), are excellent candidates for the trap and will play a crucial role for the diffusion of H or 2 H in β-Ga 2 O 3 . a) V. M. Reinertsen and P. M. Weiser contributed equally to this work.

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Section: Please Cite This Articlesupporting

confidence: 85%

Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals

Reinertsen

Weiser

Frodason

et al. 2020

Applied Physics Letters

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“…To check how the formation of complexes with Sn may affect the positron signals of Ga vacancy defects we performed first-principles calculations fully consistent with earlier work, described in detail in Ref. 24. We considered the experimentally-observed 2V Ga1 -Sn ib and 2V Ga1 -Sn ic complexes in the -2 charge state, and their hydrogenated counterparts (2V Ga1 -Sn ib -2H and 2V Ga1 -Sn ic -2H, respectively) at zero charge state, in monoclinic 160-atom supercells.…”

Section: Methodsmentioning

confidence: 99%

“…We considered the experimentally-observed 2V Ga1 -Sn ib and 2V Ga1 -Sn ic complexes in the -2 charge state, and their hydrogenated counterparts (2V Ga1 -Sn ib -2H and 2V Ga1 -Sn ic -2H, respectively) at zero charge state, in monoclinic 160-atom supercells. 4,20,24 [001] lattice directions. 24 FT-IR measurements were performed at 5.0 K at a spectral resolution of 0.5 cm −1 and with the IR beam at normal incidence on the polished sample surface.…”

Section: Methodsmentioning

confidence: 99%

“…4,20,24 [001] lattice directions. 24 FT-IR measurements were performed at 5.0 K at a spectral resolution of 0.5 cm −1 and with the IR beam at normal incidence on the polished sample surface. The samples were cooled in He exchange gas in a Janis PTSHI-950-5 low vibration, pulse tube cryostat equipped with ZnSe windows.…”

Section: Methodsmentioning

confidence: 99%

“…Recent positron annihilation studies show that V i Ga can be present in high concentrations ( 1 × 10 18 cm −3 ) in as-received β -Ga 2 O 3 single crystals regardless of the growth method or doping concentration. 24,25 Fourier transform-infrared (FT-IR) spectroscopy is often used to study hydrogen (H)-related defects via the absorption of localized O-H vibrations. Although H and D generally exhibit similar physical behaviors, D is often used as a probe in place of H due to its higher sensitivity in certain techniques, e.g., FT-IR and secondary ion mass spectrometry (SIMS).…”

Section: Introductionmentioning

confidence: 99%

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Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3

Karjalainen

Weiser

Makkonen

et al. 2021

Journal of Applied Physics

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Positron annihilation spectroscopy, Fourier transform-infrared absorption spectroscopy, and secondary ion mass spectrometry have been used to study the behavior of gallium vacancy-related defects and hydrogen in deuterium (D) implanted and subsequently annealed β -Ga 2 O 3 single crystals. The data suggest the implantation generates a plethora of V Ga -related species, including V Ga1 -and V Ga2 -type defects. The latter's contribution to the positron signal was enhanced after an anneal at 300 • C, which is driven by the passivation of V ib Ga by hydrogen as seen from infrared measurements. Subsequent annealing near 600 • C returns the positron signal to levels similar to those in the as-received samples, which suggests split V Ga -like defects are still present in the sample. The almost complete removal of the V ib Ga -2D vibrational line, the appearance of new weak O-D lines in the same spectral region, and the lack of D out-diffusion from the samples suggest that the 600 • C anneal promotes the formation of either D-containing, IR-inactive complexes or defect complexes between V ib Ga -2D and other implantation-induced defects. The degree of electrical compensation is found to be governed by the interactions between the Ga vacancies and hydrogen.

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Liquid Metal‐Printed Semiconductors

Song,

Li,

Wang

et al. 2024

Adv Eng Mater

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Liquid metal electronic ink (e‐ink) that made from gallium, indium, tin, zinc, bismuth or their alloy is promising new generation material for printed electronics. Extended from this ideal platform, such ink can be post‐processed or loaded with semiconductor nanoparticles to further make semiconductors in the forms of dots, wires and films on its surface. In this way, targeted semiconductors can be quickly fabricated and patterned as desired via the printing way with low cost at around the room temperature. This leads to the unconventional bottom‐up strategy for direct additive manufacture of functional devices. Along this direction, a series of p‐n junction diodes, field effect transistors and light‐emitting devices have been developed so far. It is clear that the liquid metal printed semiconductor would significantly innovate the classical processes of preparing integrated circuits (IC) and electronic devices. To push forward further progress of this cutting‐edge frontier, this article is dedicated to present an overview of liquid metal printed semiconductor. We first introduce the material category of liquid metal semiconductor e‐inks and their synthesis approaches. Then the core strategies toward printing semiconductors are systematically outlined. Following that, we summarize the typical printed semiconductor materials and electronic devices thus constructed as well as their potential applications. Lastly, scientific and technical challenges thus raised are interpreted. Perspective in the area is given.This article is protected by copyright. All rights reserved.

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Split Ga vacancies and the unusually strong anisotropy of positron annihilation spectra in β−Ga2O3

Cited by 42 publications

References 55 publications

Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals

Anisotropic and trap-limited diffusion of hydrogen/deuterium in monoclinic gallium oxide single crystals

Interplay of vacancies, hydrogen, and electrical compensation in irradiated and annealed n-type β-Ga2O3

Liquid Metal‐Printed Semiconductors

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