Spiral WSe₂ with Interlayer Twist for Memristive and Neuromorphic Device Applications

Abstract

Two-dimensional transition metal dichalcogenide (2D-TMDC) layered materials have shown great potential in emerging memristor technologies for neuromorphic computing applications. Often, most of the stoichiometric TMDC materials do not show any memristor hysteresis, and modulation of structural defects and compositional variations are much needed to promote the memristor characteristics. Herein, we investigate a multilayer WSe 2 with spiral topology and twisted interface for memristor switching device applications. We explore a twisted multilayered WSe 2 memristor device and its potential application as a synaptic candidate for neuromorphic computing applications. The fabricated device reports cyclic stability over 200 cycles and data retention of 10 3 s. We also discuss the conduction mechanism using edge and terrace defects across the interfaces of the twisted layers. These results provide a wide range of possibilities for improving the memristor switching behavior and will help us utilize twisted flakes for emerging neuromorphic device applications.