Spiral Bragg grating waveguides for TM mode silicon photonics

Chen, Zhitian; Flueckiger, Jonas; Wang, Xu; Zhang, Fan; Yun, Han; Zheng, Lu; Caverley, Michael; Wang, Yun; Jaeger, Nicolas A. F.; Chrostowski, Lukas

doi:10.1364/oe.23.025295

Cited by 52 publications

(20 citation statements)

References 38 publications

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“…This is almost a 30 dB rejection improvement compared to previously reported sub-wavelength engineered Bragg filters with comparable lengths [27]. The minimum corrugation width of our filter cell, of W = 150 nm, is ten times wider than conventional single-etch Bragg filters [18] and two times wider than TM-polarized Bragg filters [22] with similar bandwidths. Figure 6 also shows the transmission spectrum of a reference waveguide featuring a 450 nm width (average between the narrow and wide filter sections) and a length of 1000 µm.…”

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confidence: 42%

“…The transversemagnetic (TM) polarized mode in the Si-wire can also arXiv:1705.10237v1 [physics.optics] 29 May 2017 be considered, as it is less confined than the transverseelectric (TE) mode, thus resulting in comparatively lower effective indices. Hence, TM Bragg filters enable bandwidth of ∼ 1 nm with corrugation widths of 60 nm [22]. Alternatively, high-index-contrast constraints in the SOI platform can be overcome by waveguide index engineering based on sub-wavelength structuration [23].…”

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confidence: 99%

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Optical pump-rejection filter based on silicon sub-wavelength engineered photonic structures

et al. 2017

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The high index contrast of the silicon-on-insulator (SOI) platform allows the realization of ultracompact photonic circuits. However, this high contrast hinders the implementation of narrow-band Bragg filters. These typically require corrugations widths of a few nanometers or double-etch geometries, hampering device fabrication. Here we report, for the first time, on the realization of SOI Bragg filters based on sub-wavelength index engineering in a differential corrugation width configuration. The proposed double periodicity structure allows narrow-band rejection with a single etch step and relaxed width constraints. Based on this concept, we experimentally demonstrate a singleetch, 220 nm thick, Si Bragg filter featuring a corrugation width of 150 nm, a rejection bandwidth of 1.1 nm and an extinction ratio exceeding 40 dB. This represents a ten-fold width increase compared to conventional single-periodicity, single-etch counterparts with similar bandwidths. The silicon-on-insulator (SOI) platform with submicrometric thick Si layer has shown outstanding results in the miniaturization of photonic circuits [1]. Highquality materials and mature fabrication processes, together with the potential to leverage already existing CMOS facilities, make it a promising candidate for the large volume production of performant photonic devices. In addition to datacom [2] or sensing applications [3,4], SOI shows a great potential for the generation and manipulation of photonic entanglement [5][6][7][8][9][10]. Such a technology would enable monolithic integration of quantumprocessing circuits, opening new routes for envisioned quantum-based applications, including quantum key distribution [11] and optical quantum computing [12].

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confidence: 42%

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confidence: 99%

Optical pump-rejection filter based on silicon sub-wavelength engineered photonic structures

et al. 2017

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“…Despite the Y-branch, the insertion losses are almost the same compared to a grating of double length, and the proposed device has more compact size. In the future, we can reduce the chip size with a spiral pattern design [35,36].…”

Section: Resultsmentioning

confidence: 99%

Tunable optical delay line based on integrated grating-assisted contradirectional couplers

Wang¹,

Zhao²,

Ding³

et al. 2018

Photon. Res.

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Tunable optical delay lines are one of the key building blocks in optical communication and microwave systems. In this work, tunable optical delay lines based on integrated grating-assisted contradirectional couplers are proposed and experimentally demonstrated. The device performance is comprehensively improved in terms of parameter optimization, apodization analysis, and electrode design. Tunable group delay lines of 50 ps at different wavelengths within the bandwidth of 12 nm are realized with a grating length of 1.8 mm. Under thermal tuning mode, the actual delay tuning range is around 20 ps at 7.2 V voltage. At last, a new scheme adopting an ultra-compact reflector for doubling group delay is proposed and verified, achieving a large group delay line of 400 ps and a large dispersion value up to 5.5 × 10 6 ps∕nm · km within bandwidth of 12 nm. Under thermal tuning mode, the actual delay tuning range is around 100 ps at 8 V voltage.

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“…Also, rectangular resonators are ideal candidates for sensing applications as they maximize the footprint efficiency while providing a significant sensing area in comparison with photonic crystals [11]. Another advantage is the relaxation of the fabrication process because precise periods or gaps are not required as in [12]. However, their intrinsic resonant characteristics lead to a moderate Q-value of 4000 [13], and several attempts have been made to enhance it by cutting the corners [14] or by using different types of polygons such as triangles [15], hexagons [16,17], octagons [18], and deformed versions of these shapes [19,20].…”

Section: Introductionmentioning

confidence: 99%

Evanescently Coupled Rectangular Microresonators in Silicon-on-Insulator with High Q-Values: Experimental Characterization

2017

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Abstract:We report on evanescently coupled rectangular microresonators with dimensions up to 20 × 10 µm 2 in silicon-on-insulator in an add-drop filter configuration. The influence of the geometrical parameters of the device was experimentally characterized and a high Q value of 13,000 was demonstrated as well as the multimode optical resonance characteristics in the drop port. We also show a 95% energy transfer between ports when the device is operated in TM-polarization and determine the full symmetry of the device by using an eight-port configuration, allowing the drop waveguide to be placed on any of its sides, providing a way to filter and route optical signals. We used the FDTD method to analyze the device and e-beam lithography and dry etching techniques for fabrication.

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Spiral Bragg grating waveguides for TM mode silicon photonics

Cited by 52 publications

References 38 publications

Optical pump-rejection filter based on silicon sub-wavelength engineered photonic structures

Optical pump-rejection filter based on silicon sub-wavelength engineered photonic structures

Tunable optical delay line based on integrated grating-assisted contradirectional couplers

Evanescently Coupled Rectangular Microresonators in Silicon-on-Insulator with High Q-Values: Experimental Characterization

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