Spintronics memory using magnetic tunnel junction for X nm-generation

Abstract

The feasibility of X nm-generation scaling with magnetic tunnel junctions (MTJs) of spintronic memory is aimed at keeping up with state-of-the-art transistor scaling. Magnetocrystalline anisotropy, shape magnetic anisotropy, and multi-interfacial magnetic anisotropy have been proposed to overcome thermal fluctuation even at the X nm generation. The high magnetocrystalline anisotropy of the L10-ordered alloy combined with graphene as a tunneling barrier in the MTJs was the main focus in this study, and their potential for scaling for both 10-year data retention and nanosecond writing efficiency by micromagnetic simulation is investigated. Data retention of 10 years and high-speed writing of 2.2 ns are achieved in the MTJs with a junction diameter of 7 nm.

Advanced Modeling and Simulation of Multilayer Spin–Transfer Torque Magnetoresistive Random Access Memory with Interface Exchange Coupling

“…This has been achieved through strategic modifications, such as adding a capping MgO layer on the CoFeB FL or integrating a MgO or NMS layer in the FL. These advancements have facilitated the scaling down of MTJs to sub-10 nm dimensions, contributing to their commercialization at nanoscale diameters by semiconductor foundries [21,22].…”