Spintronic Sensors

Freitas, P. P.; Ferreira, Ricardo

doi:10.1109/jproc.2016.2578303

Cited by 124 publications

(66 citation statements)

References 56 publications

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“…By integrating the improved electrical tunnelling model iteratively in the FEM simulation, the output voltage of the MTJ with a bias voltage of 10 mV and a barrier thickness of 1 nm is obtained. These results are consistent with previous experimental results of fabricated MTJ samples reported in the literature [10]. By comparing to other the experimental work [26,27], our results show a higher TMR ratio and better small range linearization.…”

Section: Simulation Resultssupporting

confidence: 93%

“…Recently, magnetoresistive (MR) sensors have attracted significant attention in medical applications; ranging from point-of-care diagnostics [2][3][4][5] to flexible and implantable magnetoelectronics [6][7][8][9]. Extensive research over the past decade in materials and physics [10] has promised to advance high-performance tunnelling magnetoresistance (TMR) effect in magnetic tunnel junctions (MTJs) devices [11], exhibiting a large MR effect at room temperature. This has resulted in TMR sensors that are of a lower profile, faster, more reliable, and cheaper than other magnetic sensors.…”

Section: Introductionmentioning

confidence: 99%

See 1 more Smart Citation

Device Modeling of MgO-Barrier Tunneling Magnetoresistors for Hybrid Spintronic-CMOS

Zuo

Nazarpour

Heidari

2018

IEEE Electron Device Lett.

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Spintronic sensors, that are based on the tunnellingmagnetoresistive (TMR) effect, have been utilized in detecting low magnetic fields. However, still no computer-based model of these devices is available to integrated circuit designer to implement them in a hybrid spintronic-CMOS system. We developed a finite element method (FEM)-based model of a MgO-barrier TMR device in COMSOL Multiphysics ®. The parameters of this model were extracted from the state-of-the-art fabrication and experimental data. Results were compared with respect to the model geometry and the used material. The proposed TMR sensor model offers a linear response with a high TMR ratio of 233% at 10 mV power supply. The model was exported to Cadence © Spectre to create a compact model using Verilog-A language. The developed sensor model was simulated with its analog front-end in same environment. This model provided a reliable benchmark for modelling of the future hybrid spintronic-CMOS developments.

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Section: Simulation Resultssupporting

confidence: 93%

Section: Introductionmentioning

confidence: 99%

Device Modeling of MgO-Barrier Tunneling Magnetoresistors for Hybrid Spintronic-CMOS

Zuo

Nazarpour

Heidari

2018

IEEE Electron Device Lett.

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“…Spin caloritronics [4][5][6][7][8] is an interdisciplinary field which merges spintronics [9][10][11] with thermoelectrics [12][13][14][15][16][17][18][19] and has attracted tremendous attentions lately. A key device within spintronics and the IoT, and thus an attractive target to consider for spin caloritronics, is the magnetic tunnel junction (MTJ) [20][21][22][23] . The MTJ typically consists two ferromagnetic (FM) layers, separated by a thin insulating layer, with one of the magnetic layers pinned by exchange bias to an antiferromagnet, with IrMn being a popular choice.…”

mentioning

confidence: 99%

Record thermopower found in an IrMn-based spintronic stack

Ziman

et al. 2020

Nat Commun

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The Seebeck effect converts thermal gradients into electricity. As an approach to power technologies in the current Internet-of-Things era, on-chip energy harvesting is highly attractive, and to be effective, demands thin film materials with large Seebeck coefficients. In spintronics, the antiferromagnetic metal IrMn has been used as the pinning layer in magnetic tunnel junctions that form building blocks for magnetic random access memories and magnetic sensors. Spin pumping experiments revealed that IrMn Néel temperature is thickness-dependent and approaches room temperature when the layer is thin. Here, we report that the Seebeck coefficient is maximum at the Néel temperature of IrMn of 0.6 to 4.0 nm in thickness in IrMn-based half magnetic tunnel junctions. We obtain a record Seebeck coefficient 390 (±10) μV K −1 at room temperature. Our results demonstrate that IrMnbased magnetic devices could harvest the heat dissipation for magnetic sensors, thus contributing to the Power-of-Things paradigm.

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“…In this paper, the TMR sensor is modelled in the state-ofthe-art structure CoFeB/MgO/CoFeB [12] to ensure that the high magnetoresistance ratio provide higher output changes. It is a remarkable fact that the properties of the materials such as electrical conductivity, coercivity, relative permeability and relative permittivity can be measured in experiments and the parameters are only for the simulation purpose [12].…”

Section: Magnetic Sensors For Air Pollution Monitoringmentioning

confidence: 99%

On Chip Counting and Localisation of Magnetite Pollution Nanoparticles

Zuo

Chen

Fan

et al. 2019

2019 15th Conference on Ph.D Research in Microelectronics and Electronics (PRIME)

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Magnetic nanoparticles are generally smaller than 200 nm and can easily enter the human brain through the respiratory system. The harm that such nanoparticles can cause may lead to the loss of human life. This paper focuses on the modelling and simulation of a new kind of magnetic sensor, which can detect and localize these magnetite nanoparticles. The proposed sensors can help prevent these nanoparticles from polluting the environment, which will undoubtedly reduce their adverse risks to humans. The modelled magnetic sensor consists of a tunnelling magnetoresistive sensor, a conducting line, and magnetite nanoparticles. The localization and quantization of the magnetic nanoparticles can be realised by analysing different output voltages of the TMR sensor.

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Spintronic Sensors

Cited by 124 publications

References 56 publications

Device Modeling of MgO-Barrier Tunneling Magnetoresistors for Hybrid Spintronic-CMOS

Device Modeling of MgO-Barrier Tunneling Magnetoresistors for Hybrid Spintronic-CMOS

Record thermopower found in an IrMn-based spintronic stack

On Chip Counting and Localisation of Magnetite Pollution Nanoparticles

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