Spintronic In-Memory Pattern Matching

Abstract

Traditional Von Neumann computing is falling apart in the era of exploding data volumes as the overhead of data transfer becomes forbidding. Instead, it is more energy-efficient to fuse compute capability with memory where the data reside. This is particularly critical to pattern matching, a key computational step in large-scale data analytics, which involves repetitive search over very large databases residing in memory. Emerging spintronic technologies show remarkable versatility for the tight integration of logic and memory. In this article, we introduce SpinPM, a novel high-density, reconfigurable spintronic in-memory pattern matching spin-orbit torque (SOT)-specifically spin Hall effect (SHE)-substrate, and demonstrate the performance benefit SpinPM can achieve over conventional and near-memory processing systems. INDEX TERMS Computational random access memory, pattern matching, processing in memory, spin Hall effect (SHE) magnetic tunnel junction (MTJ).

A DNA Read Alignment Accelerator Based on Computational RAM

“…The suffixes of the reference in Fig. 2 [4] ''AT,'' [5] ''T,'' and [6]''$.'' Sorting the suffixes in lexicographical order of the first characters also sorts the corresponding indexes: {6, 4, 0, 2, 3, 5, 1} that is the SA of the reference sequence.…”

“…The interface between BWA-CRAM and host is modeled after SpinPM [4]. The programming interface provides abstraction between host and BWA-CRAM.…”

“…Another PIM acceleration for BWA, significantly slower than BWA-CRAM, uses ReRAM [22]. Finally, [4] covers a basic CRAM design for large-scale string matching.…”

An Inference and Learning Engine for Spiking Neural Networks in Computational RAM (CRAM)

“…When computation is enabled, CRAM performs logic operations directly inside the memory array. Spin Torque Transfer (STT) and Spin-Hall Effect (SHE) or Spin-Orbit Torque (SOT) based CRAM variants exists [4,19,29,30]. CRAM can perform one logic operation (Boolean gate) in a column at a time, but all (or a desired subset of) columns can perform the same operation in parallel.…”

Multiple modes of perpendicular magnetization switching scheme in single spin–orbit torque device

“…Typically, spin-orbit torque (SOT) MRAM shows great potential in non-volatile memory and inmemory computing. [2][3][4][5] Comparing with the STT-MRAM, the read and write paths are separated in the SOT-MRAM, resulting in higher reliability. Furthermore, the SOT-driven magnetization switching is as fast as several hundreds of picoseconds, [6,7] which qualifies the SOT-MRAM to be used in high-level caches.…”