SPIN (Version 3. 83): A Fortran program for modeling one-dimensional rotating-disk/stagnation-flow chemical vapor deposition reactors

Abstract

This report documents the SPIN Fortran computer program that computes species, temperature and velocity profiles, and deposition rates in a steady-state one-dimensional rotating disk or stagnation-point flow chemical vapor deposition (CVD) reactor. The program accounts for finite-rate gas-phase and surface chemical kinetic and multicomponent molecular transport. The governing differential equations form a two-* This document describes the features in version 3.83. We expect that this software package will continue to evolve, and thus later versions may render portions of this document out of date.

Heat transfer and flow stability in a rotating disk/stagnation flow chemical vapor deposition reactor

“…The effects of reactor height a on the flow and heat transfer for different flow rates and spin rates were studied first with the 1D computer code SPIN [12] that incorporates the similarity transformation for the rotating/stagnation flow between two infinite disks; one disk is rotating and the other (through which gas flows) is stationary. Re, =228 (600 RPM) are shown in Fig.…”

“…The 1D results were checked by varying gradient and curvature adaptive grid control parameters in SPIN [12] from 0.03 to 0.1. Typically, 100 grids (obtained with grid control parameter values of about 0.07) were required to obtain grid-independent results.…”

Particle Transport in Parallel-Plate Reactors

“…In these eases numerical solutions of coupled thermal and fluid flow must be sought. For the iniin.ite parallel plate geometry, Coltrin et al (1991) have developed the Fortran program SPIN for modeling one-dimensional coupled fluid and thermal transport. In addition to the velocity field, the code calculates the axial variation of temperature and temperature-dependent gas properties (such as density and viscosity).…”

“…In the present geometry, however, approximating the net deposition as a linear combination of these two terms has not proven as successfid. One complicating issue is that there are two expressions for the pure diffi.wion case, Equation (5)(6)(7)(8)(9)(10)(11)(12)(13)(14)(15) for the small-Pe limit, and Equation (5.16) for the large-Pe limit, opposed to the single expression from the Levich-Smoluchowski analysis. Physically, the Levich-Smoluchowski allows deposition to increase without bound as the particles become more difi%sive (because of the infinite domain), while in the present geometry there is an upper bound to diffusive deposition which is imposed by the finite domain.…”

A surface and a gas-phase mechanism for the description of growth on the diamond(100) surface in an oxy-acetylene torch reactor

“…The oxy-acetylene torch reactor was simulated with a one-dimensional stagnation flow CVD reactor model by Coltrin et al 21 This model considers a solid surface of infinite extent separated from a parallel burner outlet by distance d, or in practice a surface of finite radius R and r/RӶ1. A forced flow emerges from the outlet and is directed toward the solid surface.…”