Spin-valve transistor

Huang, Y. W.; Lo, Ching‐Hua; Yao, Y. D.; Hsieh, L. C.; Huang, Jiann‐Wen

doi:10.1063/1.1852318

Cited by 7 publications

(7 citation statements)

References 14 publications

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“…2]. The top-hBN encapsulation layer serves few advantages: (i)it protects graphene transport channel from coming in a contact with the lithography polymers or solvents 49 , (ii)it can be used as a top-gate dielectric to tune the carrier density in the encapsulated graphene transport channel and create p−n junctions 69 , and allow us to study spin transport across the p − n junction 69,82,83 , and (iii)it creates the possibility to electrically control the spin information in graphene via Rashba SOC 49 .…”

Section: Hbn As a Dielectric Substrate For Graphene Spin Valvesmentioning

confidence: 99%

Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives

2018

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The current research in graphene spintronics strives for achieving a long spin lifetime, and efficient spin injection and detection in graphene. In this article, we review how hexagonal boron nitride (hBN) has evolved as a crucial substrate, as an encapsulation layer, and as a tunnel barrier for manipulation and control of spin lifetimes and spin injection/detection polarizations in graphene spin valve devices. First, we give an overview of the challenges due to conventional SiO2 substrate for spin transport in graphene followed by the progress made in hBN based graphene heterostructures. Then we discuss in detail the shortcomings and developments in using conventional oxide tunnel barriers for spin injection into graphene followed by introducing the recent advancements in using the crystalline single/bi/tri-layer hBN tunnel barriers for an improved spin injection and detection which also can facilitate two-terminal spin valve and Hanle measurements, at room temperature, and are of technological importance. A special case of bias induced spin polarization of contacts with exfoliated and chemical vapour deposition (CVD) grown hBN tunnel barriers is also discussed. Further, we give our perspectives on utilizing graphene-hBN heterostructures for future developments in graphene spintronics.

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Section: Hbn As a Dielectric Substrate For Graphene Spin Valvesmentioning

confidence: 99%

Electrical spin injection, transport, and detection in graphene-hexagonal boron nitride van der Waals heterostructures: progress and perspectives

2018

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“…This allows us to study (i) the electrical control of spin information in graphene [20], and (ii) the spin transport across the p/n junctions created by the topgate and the nontopgate encapsulated graphene. It is interesting to study the spin transport across the p/n junction, which acts as a barrier for the transmission of spins, and results in high magnetoresistance and sensitivity in a spin valve transistor [30]. Fig.…”

Section: -3mentioning

confidence: 99%

Spin transport in fully hexagonal boron nitride encapsulated graphene

et al. 2016

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We study fully hexagonal boron nitride (hBN) encapsulated graphene spin valve devices at room temperature. The device consists of a graphene channel encapsulated between two crystalline hBN flakes: thick-hBN flake as a bottom gate dielectric substrate which masks the charge impurities from SiO 2 /Si substrate and single-layer thin-hBN flake as a tunnel barrier. Full encapsulation prevents the graphene from coming in contact with any polymer/chemical during the lithography and thus gives homogeneous charge and spin transport properties across different regions of the encapsulated graphene. Further, even with the multiple electrodes in-between the injection and the detection electrodes which are in conductivity mismatch regime, we observe spin transport over 12.5-μm-long distance under the thin-hBN encapsulated graphene channel, demonstrating the clean interface and the pinhole-free nature of the thin hBN as an efficient tunnel barrier.

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“…However, the spin injection current is restricted by the break down voltage of the tunneling material. We have recently reported a new type of the ST which combines a MR element with a pnjunction collector [4][5]. Because the resistance difference of the CIP GMR and TMR are large enough to measure, we use an emitter bias and a base resistor in the MC measurement.…”

Section: Introductionmentioning

confidence: 99%

“…To leave a barrier between the emitter and base, and change the measurement circuitry, the fabrication of this ST becomes simpler and the performances of the spin transistors are increased. For simplifications of the experiments, the most previous experiments were used the metal shadow masks and the width of the transistors is over hundreds microns [3][4][5][6][7][8]. In this study, we define the microstructure of the SVT by a standard lift-off process using E-beam lithography to fabricate 0.5 um-wide SVT.…”

Section: Introductionmentioning

confidence: 99%