Spin-valve effect in zigzag graphene nanoribbons by defect engineering

Lakshmi, S.; Roche, Stephan; Cuniberti, Gianaurelio

doi:10.1103/physrevb.80.193404

Cited by 56 publications

(31 citation statements)

References 53 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Similar results were also obtained in the O-doped case in which the E-field equaled 0.5-1.0 V=Å or −0.7 to −1.0 V=Å. Therefore, spin filters and spin switches can be achieved without magnetic contacts, 23) indicating promising applications for arsenene systems in spintronics.…”

supporting

confidence: 73%

Unexpected band structure and half-metal in non-metal-doped arsenene sheet

Wang

2015

Appl. Phys. Express

View full text Add to dashboard Cite

We performed a first-principles study on two-dimensional (2D) arsenene doped with non-magnetic elements. It was found that dopants (groups III, V, and VII) with odd numbers of valence electrons maintained the semiconducting character of the pristine system, while those (groups IV and VI) with even numbers of valence electrons caused the metallic character to change. Remarkably, the C-and O-doped systems were spin-polarized and could be modulated into half-metals by the external electric field. Our findings reveal a potential method of engineering buckled arsenene for applications in nanoelectronics. G raphene, which has a two-dimensional (2D) sp 2hybridized carbon monolayer structure, has attracted great interest owing to its peculiar electronic properties that allow electrons to move freely within its surface at high speeds. 1-4) However, it lacks an intrinsic band gap, which causes difficulty in applying graphene in electronic devices. The same problem also exists in 2D silicene, 5) germanene, 6) and stanene, 7) which are other well-known group IV monolayers that have remarkable electronic properties similar to those of graphene, but have sp 2 +sp 3 hybridized buckled honeycomb structures. Recently, arsenene, a singlelayer group V allotrope of arsenic with a puckered structure, was proposed by Kamal and Zhang et al. [8][9][10] and immediately received considerable attention. 11,12) Arsenene has substantially different electronic properties; in particular, it possesses a large non-zero band gap, high carrier mobility of ∼10 3 cm 2 =(V·s), and on=off ratio of ∼10 4 at room temperature, and thus can be applied to the channel of a field effect transistor (FET) device. Therefore, if introduced as an alternative to a group IV honeycomb counterpart, arsenene may lead to faster semiconductor electronics in the future.Generally, introducing defects, including adsorption, substitution, and intrinsic defects, into 2D materials is of fundamental importance because doing so enables a wide range of nanoelectronic devices by modulating their electronic properties. These defects significantly alter the electronic and magnetic properties, which include half-metal characteristics, 13,14) the quantum spin Hall effect, 15) and the quantum valley effect. 16) Despite many interesting studies on group IV monolayers, the tunable electronic properties of arsenene have rarely been reported on in previous works.We studied the electronic structures and magnetic properties of arsenene doped with group III, IV, V, VI, and VII elements, by using first-principles calculations. We found that all of these dopants were easily substituted for As atoms in arsenene at room temperature. All the dopants with odd numbers of valence electrons maintained the semiconducting character with a band gap similar to that of the pristine aresenene, while those with even numbers of valence electrons caused the metallic character to change. More importantly, for the Cand O-doped cases, half-metals with 100% spin-polarized currents could be obtained by appropriate...

show abstract

supporting

confidence: 73%

Unexpected band structure and half-metal in non-metal-doped arsenene sheet

Wang

2015

Appl. Phys. Express

View full text Add to dashboard Cite

show abstract

“…In a brief report which compares a pristine and a Klein defect ZGNR, 43 it is found that with the presence of an external gate, the Klein edge defects result in a transition from pure spin current to a spin degenerate charge current that is close to the Fermi energy. Furthermore, with the inclusion of a Klein defect, the ZGNR exhibits a net magnetization with a spin split band gap.…”

Section: Magnetism Due To Edge Shapementioning

confidence: 99%

Defect Engineering of 2d Monatomic-Layer Materials

et al. 2013

View full text Add to dashboard Cite

Atomic-thick monolayer two-dimensional materials present advantageous properties compared to their bulk counterparts. The properties and behavior of these monolayers can be modified by introducing defects, namely defect engineering. In this paper, we review a group of common two-dimensional crystals, including graphene, graphyne, graphdiyne, graphn-yne, silicene, germanene, hexagonal boron nitride monolayers and MoS 2 monolayers, focusing on the effect of the defect engineering on these two-dimensional monolayer materials. Defect engineering leads to the discovery of potentially exotic properties that make the field of two-dimensional crystals fertile for future investigations and emerging technological applications with precisely tailored properties.

show abstract

“…During the past few years, the spin-polarized version of molecular electronics, the so-called molecular spintronics which seeks to unite the advantages of molecular electronics with the benefits of using spin as an additional degree of freedom, has attracted enormous interests since it holds promise for the next-generation nanoelectronic devices with improved performance and enhanced functionality [4][5][6][7]. This novel discipline has a wide range of applications from highdensity data storaging to quantum computing [8,9]. In the field of molecular spintronics, much research has focused on the single-molecule magnets (SMMs), which are a class of metal-organic complex and possess desirable physical properties for spintronic applications, such as long spin relaxation time of spin-polarized carriers [10], long magnetization relaxation time [11], quantum tunneling of the magnetization [12], and Berry-phase interference [13].…”

Section: Introductionmentioning

confidence: 99%