Spin-valve effect in soft ferromagnetic sandwiches

Diény, B.; Speriosu, V. S.; Gurney, B. A.; Parkin, S. S. P.; Wilhoit, Dennis R.; Roche, K. P.; Metin, S.; Peterson, D.T.; Nadimi, S.

doi:10.1016/0304-8853(91)90311-w

Cited by 175 publications

(43 citation statements)

References 5 publications

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Section: Introductionmentioning

confidence: 99%

“…Another concept was also proposed to reach high GMR at sufficiently low magnetic fields by the so-called -3 -pseudo spin-valve [12,13]. Such a structure can be formed by the repetition of a [FM s /NM/FM h /NM] quadrilayer [12] to build up a multilayer or can simply consist of a FM s /NM/FM h trilayer sandwich [13]. In both pseudo spin-valve versions, the coercivity of the FM s layer (soft layer) is smaller than the coercivity of the FM h layer (hard layer) whereas the NM layer thickness is chosen to exhibit a coupling between the FM1 and FM2 layers as small as possible.…”

Section: Introductionmentioning

confidence: 99%

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Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

Zsurzsa

Péter

Kiss

et al. 2017

Journal of Magnetism and Magnetic Materials

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-The magnetic properties and the magnetoresistance behavior were investigated for electrodeposited nanoscale Co films, Co/Cu/Co sandwiches and Co/Cu multilayers with individual Co layer thicknesses ranging from 1 nm to 20 nm. The measured saturation magnetization values supported reasonably the validity of the nominal layer thicknesses. All three types of layered structure exhibited anisotropic magnetoresistance for thick magnetic layers whereas the Co/Cu/Co sandwiches and Co/Cu multilayers with thinner magnetic layers exhibited giant magnetoresistance (GMR), the GMR magnitude being the largest for the thinnest Co layers. The decreasing values of the relative remanence and the coercive field when reducing the Co layer thickness down to below about 3 nm indicated the presence of superparamagnetic (SPM) regions in the magnetic layers which could be more firmly evidenced for these samples by a decomposition of the magnetoresistance vs. field curves into a ferromagnetic and an SPM contribution. For thicker magnetic layers, the dependence of the coercivity (H c ) on magnetic layer thickness (d) could be described for each of the layered structure types by the usual equation H c = H co + a/d n with an exponent around n = 1. The common value of n suggests a similar mechanism for the magnetization reversal by domain wall motion in all three structure types and hints, at the same time, for the absence of coupling between magnetic layers in the Co/Cu/Co sandwiches and Co/Cu multilayers.

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Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

Zsurzsa

Péter

Kiss

et al. 2017

Journal of Magnetism and Magnetic Materials

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“…The main objectives are the development of new functionalities [8,9] and new materials for a wide variety of potential applications: nanoscale composites for hard magnets [10], exchangecoupled composite structures to reduce the switching field amplitude in storage media [11], exchange-coupled multilayers to stabilize hard reference layers in the well-known spin valve structures [12], and future applications in spin-transfer torquebased devices [13]. In the last few years, focus has been made on perpendicular-to-film-plane magnetic configurations since perpendicular recording has effectively replaced traditional in-plane storage media in the hard disk industry [11], and this configuration is more efficient for spin torque phenomena [14].…”

Section: Introductionmentioning

confidence: 99%

Phase diagram in exchange-coupled CoTb/[Co/Pt] multilayer-based magnetic tunnel junctions

et al. 2015

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International audienceMagnetic and magneto-transport properties of [Co/Pt]/MgO/[Co/Pt]CoTb magnetic tunnel junctions have been investigated. Depending on the thickness of the Pt layer, temperature, and field history, the [Co/Pt]CoTb hard layer shows complex behaviors that can be reproduced by micromagnetic calculations. The magnetic tunnel junctions appear to exhibit conventional behavior but also exchange bias and spring magnet and domain duplication phenomena that have been observed combining magnetometry and interface-sensitive spin-dependent tunnel transport

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“…Spintronic applications have been proposed or realized in a variety of materials, ranging from ferromagnetic metals, 5 semiconductors, 6 quantum dots, 7 graphene, 8,9 and more recently, topological insulators (TI's). 10 TI materials have the unique property of insulating bulk states and conducting edge or surface states with time-reversal symmetry.…”

Section: Introductionmentioning

confidence: 99%

Spin current generator based on topological insulator coupled to ferromagnetic insulators

Jalil

Tan

et al. 2012

AIP Advances

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We propose a spin current generator based on a topological insulator current-inplane spin valve, consisting of a 3D topological insulator sandwiched between two ferromagnetic insulator layers. The "on" and "off" states of the spin current can be toggled by switching the magnetization configuration of the two ferromagnetic insulator layers which are coupled to the surface states of the topological insulator.

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Spin-valve effect in soft ferromagnetic sandwiches

Cited by 175 publications

References 5 publications

Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

Magnetic and magnetoresistance studies of nanometric electrodeposited Co films and Co/Cu layered structures: Influence of magnetic layer thickness

Phase diagram in exchange-coupled CoTb/[Co/Pt] multilayer-based magnetic tunnel junctions

Spin current generator based on topological insulator coupled to ferromagnetic insulators

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