Spin-tunneling magnetoresistive elements based on multilayered nanostructures

We illustrate in this contribution the determination of the magnetic conductance across a nanocontact region defined by an isolated defect region joined between two mono-atomic leads ferromagnetically ordered. The system is described by the Heisenberg interaction. Additionally, to deal with the lack of symmetry across the contact region defined by the isolated defect, we involve the phase field matching approach. Furthermore, to compute the quantum conductance, we define the quantum scattering of the transmission and reflection probabilities within the framework of Landauer–Büttiker formalism. Based on these approaches, we present an analytical expression of the magnetic conductance. The obtained analytical results based on our adopted procedures confirm the known results adopted for perfect infinite leads (no defect). Our model calculations can be applied numerically when we deal with doping across the defect region. The adopted model could be also used numerically to deal with the impurity configurations that one might encounter in real systems.

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Study on Interaction between Ferromagnetics and Calculating the Degree of Interaction

Piatakov

Polyakov

Rusakova

2020

Bull. Russ. Acad. Sci. Phys.

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Spin-tunneling magnetoresistive elements based on multilayered nanostructures

Cited by 3 publications

References 4 publications

Magnetic Field Converters Based on the Spin-Tunnel Magnetic Resistance Effect

Magnetic Field Converters Based on the Spin-Tunnel Magnetic Resistance Effect

An Analytical Description of the Magnetic Conductance Across an Isolated Defect Region in a 1D-Ferromagnetic Lead

Study on Interaction between Ferromagnetics and Calculating the Degree of Interaction

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