Spin transport in germanium at room temperature

Shen, Chengchao; Trypiniotis, T.; Lee, K. Y.; Holmes, S. N.; Mansell, Rhodri; Husain, Muhammad; Shah, V. A.; Li, Xiaoli V.; Kurebayashi, Hidekazu; Farrer, I.; Groot, C. H. de; Leadley, D. R.; Bell, Gavin R.; Parker, E. H. C.; Whall, T. E.; Ritchie, D. A.; Barnes, C. H. W.

doi:10.1063/1.3505337

Cited by 46 publications

(50 citation statements)

References 32 publications

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“…Since the Ge is epitaxially grown on Si it has no adhesion issues, which sometimes can occur in metal mask layers [20], and can also be doped during epitaxy, thus avoiding additional implantation steps. In addition, Ge has been reported with spintronic [21], optical detection [22] and lasing [23] abilities and is an accommodating buffer for further SiGe layers [24,25] and III-V materials on Si [26]. Epitaxial Ge on Si(001) is, however, plagued by electrical leakage due to conduction through the dislocation network still present in the layer [27][28][29][30].…”

Section: Introductionmentioning

confidence: 99%

Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures

Shah

Myronov

Wongwanitwatana

et al. 2012

Science and Technology of Advanced Materials

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Suspended crystalline Ge semiconductor structures are created on a Si(001) substrate by a combination of epitaxial growth and simple patterning from the front surface using anisotropic underetching. Geometric definition of the surface Ge layer gives access to a range of crystalline planes that have different etch resistance. The structures are aligned to avoid etch-resistive planes in making the suspended regions and to take advantage of these planes to retain the underlying Si to support the structures. The technique is demonstrated by forming suspended microwires, spiderwebs and van der Pauw cross structures. We finally report on the low-temperature electrical isolation of the undoped Ge layers. This novel isolation method increases the Ge resistivity to 280 cm at 10 K, over two orders of magnitude above that of a bulk Ge on Si(001) layer, by removing material containing the underlying misfit dislocation network that otherwise provides the main source of electrical conduction.

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Section: Introductionmentioning

confidence: 99%

Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures

Shah

Myronov

Wongwanitwatana

et al. 2012

Science and Technology of Advanced Materials

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“…E-mail addresses: stari1@uic.edu, suleymantari@iyte.edu.tr polarized current from a ferromagnetic layer into Ge films [10][11][12]. This study has resulted in a better comprehension of the growth of ferromagnetic/semiconductor heterostructures, namely Ge/Fe.…”

Section: Introductionmentioning

confidence: 99%

An interface study of crystalline Fe/Ge multilayers grown by molecular beam epitaxy

Tari

2011

Applied Surface Science

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a b s t r a c tFe/Ge multilayers were grown on single crystal Ge(0 0 1) substrates by molecular beam epitaxy. The structural, electronic and magnetic properties of Fe/Ge have been studied. The analysis shows that Fe grows in a layer-by-layer epitaxial growth mode on Ge(0 0 1) substrates at 150 • C and no intermixing has been observed. Growth of a crystalline Ge film at 150 • C on a single crystal Fe film has been observed. At this temperature Ge films grow by means of the island growth mode according to reflection of high energy electron diffraction patterns. Fe layers of 36 nm thickness, deposited at 150 • C on Ge(0 0 1) substrates, show two magnetization reversal values indicating the growth of Fe in two different crystal orientations. 36 nm thick Fe and Ge layers grown at 150 • C in Ge/Fe/Ge/Fe/Ge(0 0 1) sequence shows ferromagnetic behavior, however, the same structure grown at 200 • C shows paramagnetic behavior.

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“…However, in spite of all the recent progress in the Ge field and in contrast to Si, spin transport in Ge using nonlocal four-terminal techniques has only been observed at low temperatures to date [14][15][16]. Spin transport has been reported through a Ni/Ge/AlGaAs junction; however, optical spin injection lacks the scalability needed for nanoelectronic applications [17]. Some electrical studies [18][19][20] reported spin injection into highly doped n-Ge at room temperature (RT), raising the possibility that RT Ge spintronics can be realized.…”

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confidence: 99%

Experimental Demonstration of Room-Temperature Spin Transport inn-Type Germanium Epilayers

et al. 2015

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Spin transport in germanium at room temperature

Cited by 46 publications

References 32 publications

Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures

Electrical isolation of dislocations in Ge layers on Si(001) substrates through CMOS-compatible suspended structures

An interface study of crystalline Fe/Ge multilayers grown by molecular beam epitaxy

Experimental Demonstration of Room-Temperature Spin Transport inn-Type Germanium Epilayers

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