Spin Transport in Carbon Nanotubes and Graphene: Experiments and Theory

Atomic layer deposition of a MgO barrier for a passivated black phosphorus spintronics platform

“…[6][7][8] Hence, while this material has been only recently put forward, few pioneering results on BP integration for spintronics, either in lateral spin valves 9 or in vertical 2D-Magnetic Tunnel Junctions, 10 have already been reported. However, as noted before in diverse cases of channel materials (e.g., Si, 11 GaAs, 12 nanotubes, 13,14 graphene 15,16 …), efficient spin injection in a resistive/semiconducting material such as BP is known to be particularly difficult. Indeed, the spin device performances are dependent on device parameters beyond the sole BP intrinsic spin transport properties.…”