Spin transport characteristics and photoelectric properties of magnetic semiconductor NiBr₂ monolayer

Abstract

Magnetic semiconductor materials have potential applications in the field of spintronic devices. In this paper, some nano-device structures based on the magnetic semiconductor NiBr2 monolayer (NiBr2-ML) are designed, their spin-resolved transport and photoelectric properties are studied by using density functional theory combined with non-equilibrium Green's function method. The results show that, both the NiBr2-ML pn-junction diodes and sub-3 nanometer pin-junction field-effect transistors (FETs) exhibit the significant rectification and spin filtering effects in either the armchair or the zigzag direction. The gates can obviously tune the electron transmission of the pin-junction FETs. The current is significantly suppressed with the increase of gate voltages. In addition, NiBr2-ML has a strong response to the blue and green light, thus its phototransistor can generate a strong photocurrent under the irradiation of blue and green light. The research results in this paper reveal the multifunctional characteristics of NiBr2-ML, which provides an important reference for the application of nickel-based dihalides in the field of semiconductor spintronic devices and optoelectronic devices.

Magnetic and spin transport properties of a two-dimensional magnetic semiconductor kagome lattice Nb₃Cl₈ monolayer

“…它们诱人 的应用前景及其新颖的物理和化学性质, 为设计和 制备新型材料和器件的实验工作提供了不竭的动 力. 研究发现, 二维半导体材料可以表现出许多功 能特性, 例如整流效应 [23] 、场效应行为 [24][25][26] 、自旋 过滤效应 [19,27] 等, 可以作为整流器、场效应晶体管 和自旋开关等的重要候选材料. 随着量子计算的飞 速发展, 对低功耗、小尺寸和高效率的自旋电子学 器件提出了更高的要求.…”