2023
DOI: 10.1039/d2nr05176a
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Spin transfer torques due to the bulk states of topological insulators

Abstract: Spin torques at topological insulator (TI)/ferromagnet interfaces have received considerable attention in recent years with a view towards achieving full electrical manipulation of magnetic degrees of freedom. The most important...

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Cited by 5 publications
(3 citation statements)
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References 119 publications
(215 reference statements)
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“…This work along with our previous work on surface state spin torques [51] gives a complete picture of the surface state contribution to topological insulator spin torques. While there are a number of other mechanisms that contribute to the topological insulator SOT [9,43,44,46,[65][66][67][68][69][70][71][72][73], it should be noted that the field-like torque due to the REE, renormalized by extrinsic spin-orbit scattering, is still expected to be the dominant contribution regardless of the sign of the extrinsic spin-orbit parameter λ 0 .…”
Section: Numerical Results and Discussionmentioning
confidence: 99%
“…This work along with our previous work on surface state spin torques [51] gives a complete picture of the surface state contribution to topological insulator spin torques. While there are a number of other mechanisms that contribute to the topological insulator SOT [9,43,44,46,[65][66][67][68][69][70][71][72][73], it should be noted that the field-like torque due to the REE, renormalized by extrinsic spin-orbit scattering, is still expected to be the dominant contribution regardless of the sign of the extrinsic spin-orbit parameter λ 0 .…”
Section: Numerical Results and Discussionmentioning
confidence: 99%
“…15,16 Eventually, combining electronics, photonics, and magnetism could create new spin-based devices with numerous applications, like spin diodes, spin FETs (field effect transistors), spin LEDs (light-emitting diodes), spin RTDs (resonant tunneling devices), optical switches working at terahertz frequency, modulators, encoders, decoders, and quantum bits for quantum computing and communication. 3,17,18 This work concerns the fabrication of a Ni 80 Fe 20 /TI/p-Si heterostructure, where the TI layer is Bi 2 Te 2 Se, Bi 2 Se 3 , and Bi 2 Te 3 and the magnetic layer is permalloy (Ni 80 Fe 20 ). The polycrystalline character of the grown films was confirmed by the X-ray diffraction analysis.…”
Section: Introductionmentioning
confidence: 99%
“…15,16 Eventually, combining electronics, photonics, and magnetism could create new spin-based devices with numerous applications, like spin diodes, spin FETs (field effect transistors), spin LEDs (light-emitting diodes), spin RTDs (resonant tunneling devices), optical switches working at terahertz frequency, modulators, encoders, decoders, and quantum bits for quantum computing and communication. 3,17,18…”
Section: Introductionmentioning
confidence: 99%