2018
DOI: 10.7567/jjap.57.09td01
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Spin transfer torque switching of Co/Pd multilayers and Gilbert damping of Co-based multilayers

Abstract: The critical current density (J c0 ) and thermal stability factor Δ for the spin transfer torque switching of [Pt/Co] 6 /Cu/[Co/Pd] 3 nanopillars with various Co/Pd layer compositions were investigated. Moreover, the Gilbert damping constants α of Co/Pd and Co/Pt multilayers (MLs) with various layer compositions were also studied to understand the variations in the J c0 and Δ of the nanopillars. The J c0 and Δ of Co/Pd MLs were found to be almost independent of the pillar diameters, and the effective reversal … Show more

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Cited by 7 publications
(6 citation statements)
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“…Moreover, because the Pt layer thickness in the present study (0.3 and 0.6 nm) is much smaller than spin diffusion length in Pt (∼1.2 nm), 31) the damping due to spin-pumping is inversely proportional to X. 32,33) Therefore, a decrease in X leads to an increase in α eff .…”
Section: Resultsmentioning
confidence: 71%
“…Moreover, because the Pt layer thickness in the present study (0.3 and 0.6 nm) is much smaller than spin diffusion length in Pt (∼1.2 nm), 31) the damping due to spin-pumping is inversely proportional to X. 32,33) Therefore, a decrease in X leads to an increase in α eff .…”
Section: Resultsmentioning
confidence: 71%
“…Details of the TRMOKE setup are described in Refs. [31][32][33][34][35]. The sample stack used for the TRMOKE was SiN (5 nm)/MnGa (50 nm)/Cr (10 nm)/MgO(001), and after ion irradiation, an additional SiN (35 nm) layer was deposited to enhance the Kerr rotation of the MnGa.…”
Section: Magnetization Dynamics Of Ion-implanted Mngamentioning
confidence: 99%
“…With charge based electronics reaching their limitations, more attention is now being given to devices and materials which employ spin currents. A radical shift from the conventional electronic paradigm, devices based on spintronics have shown potential application in data storage, non‐volatile magnetic random access memories, [ 1–3 ] spin based field effect transistors, [ 4 ] etc. In such devices, spin–orbit coupling (SOC) plays a vital role.…”
Section: Introductionmentioning
confidence: 99%