Spin‐Transfer Torque Materials and Devices for Magnetic Random‐Access Memory (STT‐MRAM)

Cui, Yan; Luo, Jun

doi:10.1002/9781119698968.ch4

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Anomalous Hall Conductance1

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2023

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(2 citation statements)

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“…Using transport probabilities of equation (12), one can calculate the Hall and longitudinal conductances [19] in the x and y directions, respectively. Here, θ is the propagation angle of the incoming fermion.…”

Section: Anomalous Hall Conductancementioning

confidence: 99%

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Anisotropic angle-dependent Andreev reflection at the ferromagnet/superconductor junction on the surface of topological insulators

Salehi

2023

Phys. Scr.

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We theoretically demonstrate that a ferromagnetic/superconductor junction on the surface of three-dimensional topological insulators (3D TIs) has an anisotropic angle-dependent Andreev reflection when the in-plane magnetization has a component perpendicular to the junction. In the presence of in-plane magnetization, the Dirac cone’s location adjusts in the k-space, whereas its out-of-plane component induces a gap. This movement leads to the anisotropic angle-dependent Andreev reflection and creates transverse conductance flows parallel to the interface. Also, an indirect gap induces in the junction, which removes the transport signatures of Majorana bound states. Because of the full spin-momentum locking of Dirac fermions on the surface of 3DTIs, a torque called Andreev Transfer Torque (ATT) imposes on the junction. Moreover, we propose a setup to detect them experimentally.

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Section: Anomalous Hall Conductancementioning

confidence: 99%

“…This torque originates from the transfer of spin angular momentum of spin current to the magnetization or vice versa [8][9][10]. This effect works in electronic devices such as oscillator circuits or magnetic random access memory [11,12]. Heat dissipation due to electric resistance is one of the most critical issues in spintronics.…”

Section: Introductionmentioning

confidence: 99%

Anisotropic angle-dependent Andreev reflection at the ferromagnet/superconductor junction on the surface of topological insulators

Salehi

2023

Phys. Scr.

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show abstract

Spin‐Transfer Torque Materials and Devices for Magnetic Random‐Access Memory (STT‐MRAM)

Cited by 1 publication

References 70 publications

Anisotropic angle-dependent Andreev reflection at the ferromagnet/superconductor junction on the surface of topological insulators

Anisotropic angle-dependent Andreev reflection at the ferromagnet/superconductor junction on the surface of topological insulators

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