Spin Transfer Torque Magnetoresistive Random Access Memory

Law, Wai Cheung; Wong, Shawn De Wei

doi:10.1007/978-981-15-6912-8_2

Cited by 4 publications

(2 citation statements)

References 199 publications

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“…Strontium Ruthenate (SrRuO 3 ) bottom electrode and a ferroelectric barrier with a thickness of 3.6 nm were used in 2010 to produce the enormous Tunneling Electro resistance (TER) phenomenon in FTJs. Retention was shown by the TER effect to last 72 h (Law and Wong, 2021b;Dörfler et al, 2020). Cobalt and Gold electrode FTJ in 2012 had a TER ratio of 64 and withstood 900 ON/OFF cycles.…”

Section: Figurementioning

confidence: 99%

Ferroelectric tunnel junctions: current status and future prospect as a universal memory

Sharma,

Kumar,

Mishra

et al. 2023

Front. Mater.

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The semiconductor industry is actively looking for an all-encompassing memory solution that incorporates the advantageous aspects of current technology. This features non-volatility, like that of Flash memory, high scalability, like that of both Dynamic Random Access Memory (DRAM) and Flash, quick operation, like that of Static RAM (SRAM), and durability, like that of both DRAM and SRAM. Ferroelectric thin films, which have electrically switchable bi-stable polarization, are one prospective technology that has the potential to revolutionize memory storage. However, due to difficulties with scalability and dependable industrial manufacturing, Ferro-Electric (FE) memory technology has not been able to effectively compete with DRAM and Flash. Research in this area has accelerated after the recent discovery of resistive switching in ferroelectric tunnel junctions (FTJs). For FTJs to be successful, it is important to overcome some obstacles, such as preserving bi-stability in ferroelectric thin films over the critical thickness. Additionally, the existence of interfacial layers, sometimes known as a “dead layer”, between the electrode and the film can affect its characteristics. The article gives an overview of semiconductor memories with an emphasis on emerging technologies having the potential for future applications. It then goes into detail on the benefits of FTJ and its non-destructive reading capacity. The article also discusses the potential uses for FTJs in resistive switching while acknowledging their drawbacks and constraints.

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Section: Figurementioning

confidence: 99%

Ferroelectric tunnel junctions: current status and future prospect as a universal memory

Sharma,

Kumar,

Mishra

et al. 2023

Front. Mater.

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“…is at the heart of MRAM technology [3,4], and has proven particularly effective in tunnel magnetoresistive devices and circuits [5,6]. Spin transfer torque (STT)-MRAM devices with a CoFeB/MgO/CoFeB heterostructure provide high thermal stability and a low damping constant [7].…”

Section: Introductionmentioning

confidence: 99%

Interface imperfection effects on spin transfer torque switching: an atomistic approach

Ramesh¹,

Cheng²,

Ku³

et al. 2022

J. Phys. D: Appl. Phys.

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The further commercialization of spintronic memory devices depends on the development of methods by which to assess performance. This paper presents an approach to the atomistic investigation of switching performance in spin transfer torque (STT) magneto-resistive random access memory (MRAM) devices with the use of interface imperfection model. Switching simulation in the nanosecond regime was made possible under this model, and we first time demonstrate that switching time is inversely proportional to interface imperfection (i.e. roughness). In investigating the damping of CoFeB/MgO films, we analyzed the effective damping constant , which cannot be accurately predicted for ferromagnetic layers of less than 2 nm using existing micromagnetic models. The proposed model includes a roughness parameter, which has nearly no effect on the effective damping constant in films of >2nm, but a profound effect in films of <2nm, reaching a 27% decrease in a 1.0 nm CoFeB film. Our finding is supported by the experimental data of classic references. We expect that these results will prove valuable in magnetic simulation and research on MRAM with ultrathin films.

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Chirality transfer torque and transverse Chirality current in the Dirac/magnetic Weyl semimetal junction

Salehi

2024

Phys. Scr.

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We theoretically show that an interface formed by a three-dimensional Dirac/magnetic Weyl semimetal deflects the propagation direction of hitting Weyl fermions according to their Chirality in opposite directions. This effect leads to a Chirality current that flows parallel to the interface. There is an imbalance between the Chirality of Weyl fermions in this current whereas it does not carry any charge. Also, this phenomenon creates an indirect gap in the charge conductance that passes through the circuit. Unlike real spin, Chirality remains a good quantum number in systems characterized by very strong spin-momentum coupling. We derive a continuity equation for the Chirality density wave to elucidate how magnetization alters its dynamics and relates to the transverse Chirality current. Furthermore, we demonstrate a torque, that we called Chirality transfer torque, imposes on the junction that its value relates to the transverse Chirality current

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Spin Transfer Torque Magnetoresistive Random Access Memory

Cited by 4 publications

References 199 publications

Ferroelectric tunnel junctions: current status and future prospect as a universal memory

Ferroelectric tunnel junctions: current status and future prospect as a universal memory

Interface imperfection effects on spin transfer torque switching: an atomistic approach

Chirality transfer torque and transverse Chirality current in the Dirac/magnetic Weyl semimetal junction

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