Spin-transfer torque induced by the spin anomalous Hall effect

Iihama, Satoshi; Taniguchi, Tomohiro; Yakushiji, Kay; Fukushima, Akio; Shiota, Yoichi; Tsunegi, Sumito; Hiramatsu, Rikako; Yuasa, Shinji; Suzuki, Y.; Kubota, Hitoshi

doi:10.1038/s41928-018-0026-z

Cited by 133 publications

(88 citation statements)

References 27 publications

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“…[1][2][3] Large AHE are essential for applications such AHE sensors [4] and those based on spin-transfer torque. [5] As per current knowledge, it is believed that AHE originates from two different microscopic mechanisms, i.e., intrinsic and extrinsic ones. As regards the intrinsic mechanism, Karplus and Luttinger first proposed that the spin-orbit interaction together with interband mixing results in an anomalous electron velocity in the direction transverse to the electric field; [6] this mechanism was recently revived based on the framework of Berry curvature, [6][7][8][9] which yields the resistivity relation , respectively.…”

Section: Introductionmentioning

confidence: 99%

33% Giant Anomalous Hall Current Driven by Both Intrinsic and Extrinsic Contributions in Magnetic Weyl Semimetal Co₃Sn₂S₂

Zeng

Zhang

Sun

et al. 2020

Adv Funct Materials

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Anomalous Hall effect (AHE) can be induced by intrinsic mechanism due to the band Berry phase and extrinsic one arising from the impurity scattering. The recently discovered magnetic Weyl semimetal Co3Sn2S2 exhibits a large intrinsic anomalous Hall conductivity (AHC) and a giant anomalous Hall angle (AHA). The predicted energy dependence of the AHC in this material exhibits a plateau at 1000 Ω-1 cm-1 and an energy width of 100 meV just below EF, thereby implying that the large intrinsic AHC will not significantly change against small-scale energy disturbances such as slight p-doping. Here, we successfully trigger the extrinsic contribution from alien-atom scattering in addition to the intrinsic one of the pristine material by introducing a small amount of Fe dopant to substitute Co in Co3Sn2S2. Our experimental results show that the AHC and AHA can be prominently enhanced up to 1850 Ω-1 cm-1 and 33%, respectively, owing to the synergistic contributions from the intrinsic and extrinsic mechanisms as distinguished by the TYJ model. In particular, the tuned AHA holds a record value in low fields among known magnetic materials. This study opens up a pathway to engineer giant AHE in magnetic Weyl semimetals, thereby potentially advancing the topological spintronics/Weyltronics.

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Section: Introductionmentioning

confidence: 99%

33% Giant Anomalous Hall Current Driven by Both Intrinsic and Extrinsic Contributions in Magnetic Weyl Semimetal Co₃Sn₂S₂

Zeng

Zhang

Sun

et al. 2020

Adv Funct Materials

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“…Although a large number of SOT studies has already been carried out on FM/HM bilayer systems, the mechanisms for SOT are still under investigation, with an eye on finding more effective ways of controlling magnetization by an applied current. [8][9][10][11] In addition to the spin Hall and the Rashba effect, it is known that in crystalline systems with broken bulk inversion symmetry the spin polarization of carriers can also be achieved by the Dresselhaus effect. 12 This form of spin polarization of carriers can then also exert a SOT on local magnetic moments, and thus can be used to manipulate the magnetization.…”

Section: Introductionmentioning

confidence: 99%

Quantitative Determination of Spin-Orbit-Induced Magnetic Field in GaMnAs by Field-Scan Planar Hall Measurements

Park¹,

Lee²,

Lee³

et al. 2020

Preprint

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Spin-orbit-induced (SOI) effective magnetic field in GaMnAs film with in-plane magnetic anisotropy has been investigated by planar Hall effect measurements. The presence of SOI field was identified by a shift between planar Hall resistance (PHR) hystereses observed with positive and negative currents. The difference of switching fields occurring between the two current polarities, which is determined by the strength of the SOI field, is shown to depend on the external field direction. In this paper we have developed a method for obtaining the magnitude of the SOI fields based on magnetic free energy that includes the effects of magnetic anisotropy and the SOI field. Using this approach, the SOI field for a given current density was accurately obtained by fitting to the observed dependence of the switching fields on the applied field directions. Values of the SOI field obtained with field scan PHR measurements give results that are consistent with those obtained by analyzing the angular dependence of PHR, indicating the reliability of the field scan PHR method for quantifying the SOI-field in GaMnAs films. The magnitude of the SOI field systematically increases with increasing current density, demonstrating the usefulness of SOI fields for manipulation of magnetization by current in GaMnAs films.

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“…Notably, the interface-generated spin current is not the only mechanism to induce a spin-z polarization of the spin current. In ferromagnetic trilayers (i.e., FM1/NM/FM2), the anomalous Hall effect or anisotropic magnetoresistance of FM1 [151,152] also allows the spin-z polarization of spin current when the magnetization of FM2 tilts out of the plane.…”

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confidence: 99%

Rashba Effect in Functional Spintronic Devices

Koo

Kim

et al. 2020

Advanced Materials

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Exploiting spin transport increases the functionality of electronic devices and enables such devices to overcome physical limitations related to speed and power. Utilizing the Rashba effect at the interface of heterostructures provides promising opportunities toward the development of high-performance devices because it enables electrical control of the spin information. Herein, the focus is mainly on progress related to the two most compelling devices that exploit the Rashba effect: spin transistors and spin-orbit torque devices. For spin field-effect transistors, the gate-voltage manipulation of the Rashba effect and subsequent control of the spin precession are discussed, including for all-electric spin field-effect transistors. For spin-orbit torque devices, recent theories and experiments on interface-generated spin current are discussed. The future directions of manipulating the Rashba effect to realize fully integrated spin logic and memory devices are also discussed.

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Spin-transfer torque induced by the spin anomalous Hall effect

Cited by 133 publications

References 27 publications

33% Giant Anomalous Hall Current Driven by Both Intrinsic and Extrinsic Contributions in Magnetic Weyl Semimetal Co₃Sn₂S₂

33% Giant Anomalous Hall Current Driven by Both Intrinsic and Extrinsic Contributions in Magnetic Weyl Semimetal Co₃Sn₂S₂

Quantitative Determination of Spin-Orbit-Induced Magnetic Field in GaMnAs by Field-Scan Planar Hall Measurements

Rashba Effect in Functional Spintronic Devices

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Spin-transfer torque induced by the spin anomalous Hall effect

Cited by 133 publications

References 27 publications

33% Giant Anomalous Hall Current Driven by Both Intrinsic and Extrinsic Contributions in Magnetic Weyl Semimetal Co3Sn2S2

33% Giant Anomalous Hall Current Driven by Both Intrinsic and Extrinsic Contributions in Magnetic Weyl Semimetal Co3Sn2S2

Quantitative Determination of Spin-Orbit-Induced Magnetic Field in GaMnAs by Field-Scan Planar Hall Measurements

Rashba Effect in Functional Spintronic Devices

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Product

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33% Giant Anomalous Hall Current Driven by Both Intrinsic and Extrinsic Contributions in Magnetic Weyl Semimetal Co₃Sn₂S₂

33% Giant Anomalous Hall Current Driven by Both Intrinsic and Extrinsic Contributions in Magnetic Weyl Semimetal Co₃Sn₂S₂