Spin-transfer-induced domain wall motion in a spin valve

Abstract

Magnetization reversal and magnetoresistance behavior of perpendicularly magnetized [Co/Pd]4/Au/[Co/Pd]2 nanowires J. Appl. Phys. 112, 073902 (2012) Electric-field control of CoFeB/IrMn exchange bias system J. Appl. Phys. 112, 064120 (2012) Critical effect of spin-dependent transport in a tunnel barrier on enhanced Hanle-type signals observed in threeterminal geometry Appl. Phys. Lett. 101, 132411 (2012) Giant tunneling magnetoresistance in epitaxial Co2MnSi/MgO/Co2MnSi magnetic tunnel junctions by halfmetallicity of Co2MnSi and coherent tunneling Appl. Phys. Lett. 101, 132418 (2012) Interface mediated ferromagnetism in bulk CuO/Cu2O composites Appl.

Current Induced Domain‐wall Motion in Magnetic Nanowires

“…These geometries are often termed currentin-plane (CIP) and current perpendicular to plane (CPP), respectively. Few GMR measurements of DW motion have been reported although both the CIP (Ono, Miyajima, Shigeto and Shinjo, 1998;Ono et al, 1999a;Grollier et al, 2002Grollier et al, , 2003Grollier et al, , 2004Lim et al, 2004. ) and CPP (Zambano and Pratt, 2004) geometries have been used, typically with a spin-valve structure (Parkin and Wessels, 1995;Parkin et al, 2003).…”

“…In most of these experiments, the DW is first pinned at either a defect (Thomas et al, 2006;Laufenberg et al, 2006b;Grollier et al, 2004;Lim et al, 2004), or a notch (Florez, Krafft and Gomez, 2005;Hayashi et al, 2006b;Klaui et al, 2005c) or at a cross (Ravelosona et al, 2005). In one report , a quite different experimental method was used: the propagation field along a nanowire is measured while dc currents of both polarities are applied.…”

Spin-polarised currents and magnetic domain walls

“…Refs 414, 422. More details of this experiment were reported in a third paper [426]. They included the applied field dependence of the critical current density, which allowed the strength of the pinning potentials to be determined in terms of the effective fields they exert on the walls as they are pushed by the flow of polarised carriers.…”

Current-induced magnetization reversal inNiFe∕Cu∕Co∕Aunotched mesoscopic bars

“…The critical current densities range from 2 ϫ 10 11 to 5 ϫ 10 11 A/m 2 , which are of the same order of magnitude as those previously reported to move a domain wall in the soft layer of a spin-valve wire. [31][32][33][34] On the other hand, for a positive bias field and positive current, or negative bias field and negative current, the sample shows a single reversal step ͑I C3 ͒ corresponding to the complete reversal of the NiFe. Even though CIMS occurred for both directions of the current flow, the response is asymmetric; for example, the two I C3 values in Fig.…”

“…In the CIP geometry, the motion of a domain wall within a multilayer structure can be detected from the giant magnetoresistance ͑GMR͒, and this has been used to give a direct indication of the position of the wall. 31 Grollier et al [31][32][33][34] investigated current-induced domain wall displacement in 20-m-long CoO / Co/ Cu/ NiFe/ Au spinvalve wires with widths down to 300 nm, where domain wall motion was obtained at current densities of the order of 10 11 -10 12 A/m 2 . In narrow wires, both edge irregularities 32 and notches 31 were effective as domain wall pinning sites.…”