Spin-torque induced rf oscillation in magnetic tunnel junctions with an Fe-rich CoFeB free layer

Masugata, Yoshimitsu; Ishibashi, S.; Tomita, Hiroyuki; Seki, Takeshi; Nozaki, Takayuki; Suzuki, Y.; Fukushima, Akio; Yuasa, Shinji

doi:10.1088/1742-6596/266/1/012098

Cited by 10 publications

(15 citation statements)

References 21 publications

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“…This value is larger than the highest values reported so far (175 nW in Ref. 13). More importantly, the STNOs in this work show narrower linewidth and suppression of the additional precession modes, which are critical for practical applications.…”

contrasting

confidence: 64%

“…12 and 175 nW in Ref. 13. However, the STNOs described in these reports also exhibited multiple emission peaks 12 and large linewidths.…”

mentioning

confidence: 74%

“…However, the STNOs described in these reports also exhibited multiple emission peaks 12 and large linewidths. 12,13 Thadani et al 7 and Mizushima et al 10 reported that the application of the magnetic field near/along the magnetic hard axis of the nanopillars can narrow the linewidth. However, the output power in their STNOs was quite low (< 1 nW).…”

mentioning

confidence: 99%

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Enhancement of microwave emission in magnetic tunnel junction oscillators through in-plane field orientation

Zeng

Upadhyaya

Amiri

et al. 2011

Applied Physics Letters

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We observe giant enhancement of microwave emission in MgO-based magnetic tunnel junction nano-oscillators through in-plane magnetic field orientation. At an optimal in-plane field angle, the output power reaches up to 240 nW, two orders of magnitude higher compared to the vicinity of the easy axis (∼1 nW). Moreover, in this condition, the linewidth is significantly narrowed (<100 MHz) and the additional precession modes are suppressed. Analysis of the data indicates that the optimal field angle is influenced by the field-like torque. The results demonstrate that controlling the in-plane magnetic field orientation can be an important strategy for developing high-power spin-torque oscillators.

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contrasting

confidence: 64%

“…12 and 175 nW in Ref. 13. However, the STNOs described in these reports also exhibited multiple emission peaks 12 and large linewidths.…”

mentioning

confidence: 74%

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Enhancement of microwave emission in magnetic tunnel junction oscillators through in-plane field orientation

Zeng

Upadhyaya

Amiri

et al. 2011

Applied Physics Letters

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“…In particular, for STNO applications, the IPA can be used to reduce the out-of-plane demagnetizing field while maintaining the orientation of both the two magnetizations in the film plane, Errore. Il segnalibro non è definito., 64 or by maintaining the polarizer in-plane and the free layer tilted 65 or out-of-plane. 26 Those latter results are very promising to design high performance STNOs where all the parameters discussed later in the text can be optimized at the same time.…”

Section: Magnetic Tunnel Junctionsmentioning

confidence: 99%

Spin transfer nano-oscillators

2013

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The use of spin transfer nano-oscillators (STNOs) to generate microwave signal in nanoscale devices have aroused tremendous and continuous research interest in recent years. Their key features are frequency tunability, nanoscale size, broad working temperature, and easy integration with standard silicon technology. In this feature article, we give an overview of recent developments and breakthroughs in the materials, geometry design and properties of STNOs. We focus in more depth on our latest advances in STNOs with perpendicular anisotropy showing a way to improve the output power of STNO towards the µW range. Challenges and perspectives of the STNOs that might be productive topics for future research were also briefly discussed.

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“…Recently, Fe-rich CoFeB materials have been used for MgO based MTJs in various applications such as memories [15][16][17] and microwave oscillators, 18,19 exhibiting high MR value and large interfacial perpendicular anisotropy (IPA). The utilization of CoFeB with large IPA for building sensors is expected to produce high sensitivity due to its high MR ratio when used in MgO based MTJ structures.…”

mentioning

confidence: 99%

Nanoscale magnetic tunnel junction sensors with perpendicular anisotropy sensing layer

et al. 2012

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A nano-scale linear magnetoresistance sensor is demonstrated using magnetic tunnel junctions with an in-plane magnetized reference layer and a sensing layer with interfacial perpendicular anisotropy. We show that the sensor response depends critically on the thickness of the sensing layer since its perpendicular anisotropy is significantly associated with thickness. The optimized sensors exhibit a large field sensitivity of up to 0.02% MR/Oe and a high linear field range of up to 600 Oe. These findings imply that this sensing scheme is a promising method for developing nano-scale magnetic sensors with simple design, high sensitivity, and low power consumption. V

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Spin-torque induced rf oscillation in magnetic tunnel junctions with an Fe-rich CoFeB free layer

Cited by 10 publications

References 21 publications

Enhancement of microwave emission in magnetic tunnel junction oscillators through in-plane field orientation

Enhancement of microwave emission in magnetic tunnel junction oscillators through in-plane field orientation

Spin transfer nano-oscillators

Nanoscale magnetic tunnel junction sensors with perpendicular anisotropy sensing layer

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