Spin texture and mirror Chern number in Hg-based chalcogenides

Wang, Qing Ze; Wu, Shu Chun; Felser, Claudia; Yan, Binghai; Liu, Chao Xing

doi:10.1103/physrevb.91.165435

Cited by 14 publications

(12 citation statements)

References 37 publications

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“…HgS is a strong TI with counterclockwise spin chirality [20,21,49], which is confirmed by our calculations: ν ¼ ð1; 0; 0; 0Þ and c m ¼ þ1. The spectral density of the Sterminated (001) surface hosts a topological nontrivial surface state atΓ whose spin chirality is opposite to that of strained HgTe (Fig.…”

supporting

confidence: 86%

Spin Chirality Tuning and Topological Semimetals in StrainedHgTexS1−x

et al. 2015

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By means of detailed electronic structure calculations, we show that strained HgTe(x)S(1-x) alloys show a surprisingly rich topological phase diagram. In the strong topological insulator phase, the spin chirality of the topological nontrivial surface states can be reversed by adjusting the alloy concentration x and the strain. On top of this, we predict two semimetallic topological phases, namely, a Dirac semimetal and a Weyl semimetal. The topological phases are characterized by their Z2 invariants and their mirror Chern numbers.

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confidence: 86%

Spin Chirality Tuning and Topological Semimetals in StrainedHgTexS1−x

et al. 2015

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“…This is opposite to previously known TI materials such as Bi 2 Se 3 [12,13,39]. The unique spin vortex on LiAuS type TIs is attributed to the negative sign of SOC [40], which can exhibit exotic topological phenomena when interfaced with a left-hand TI material [40,41].…”

Section: Resultscontrasting

confidence: 71%

Theoretical search for half-Heusler topological insulators

et al. 2015

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We have performed ab-initio band structure calculations on more than two thousand half-Heusler compounds in order to search for new candidates for topological insulators.Herein, LiAuS and NaAuS are found to be the strongest topological insulators with the bulk band gap of 0.20 and 0.19 eV, respectively, different from the zero band gap feature reported in other Heusler topological insulators. Due to the inversion asymmetry of the Heusler structure, their topological surface states on the top and bottom surfaces exhibit p-type and n-type carriers, respectively. Thus, these materials may serve as an ideal platform for the realization of topological magneto-electric effects as polar topological insulators. Moreover, these topological surface states exhibit the right-hand spin-texture in the upper Dirac cone, which distinguish them from currently known topological insulator materials. Their topological nontrivial character remains robust against in-plane strains, which makes them suitable for epitaxial growth of films.3

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“…This fundamental characteristic can potentially have an intriguing and synergistic interaction with ferroelectrics, since ferroelectric nanomaterials require conductive surfaces to compensate the bound charge and reduce the depolarizing field [676]. Previous recent work has discovered topological insulators [677][678][679][680] and topological crystalline insulators [681,682] that break inversion symmetry, but none of these are switchable. A recent proposal [683] suggests that CsPbI 3 under pressure could exhibit transition to a topological insulating phase and to a switchable ferroelectric phase, but more work in this area could yield exciting functional materials.…”

Section: Topologically Protected States In Ferroelectricsmentioning

confidence: 99%

New modalities of strain-control of ferroelectric thin films

Damodaran¹,

Agar²,

Pandya³

et al. 2016

J. Phys.: Condens. Matter

111

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Ferroelectrics, with their spontaneous switchable electric polarization and strong coupling between their electrical, mechanical, thermal, and optical responses, provide functionalities crucial for a diverse range of applications. Over the past decade, there has been significant progress in epitaxial strain engineering of oxide ferroelectric thin films to control and enhance the nature of ferroelectric order, alter ferroelectric susceptibilities, and to create new modes of response which can be harnessed for various applications. This review aims to cover some of the most important discoveries in strain engineering over the past decade and highlight some of the new and emerging approaches for strain control of ferroelectrics. We discuss how these new approaches to strain engineering provide promising routes to control and decouple ferroelectric susceptibilities and create new modes of response not possible in the confines of conventional strain engineering. To conclude, we will provide an overview and prospectus of these new and interesting modalities of strain engineering helping to accelerate their widespread development and implementation in future functional devices.

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Spin texture and mirror Chern number in Hg-based chalcogenides

Cited by 14 publications

References 37 publications

Spin Chirality Tuning and Topological Semimetals in StrainedHgTexS1−x

Spin Chirality Tuning and Topological Semimetals in StrainedHgTexS1−x

Theoretical search for half-Heusler topological insulators

New modalities of strain-control of ferroelectric thin films

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