Spin splitting of subband energies due to inversion asymmetry in semiconductor heterostructures

Abstract

We review the spin splitting of subband energies caused by bulk and structure inversion asymmetries in semiconductor III-V and II-VI heterostructures. We present both theoretical and experimental aspects of the problem, and we discuss the spin splitting in the absence of external fields as well as its dependence on magnetic and electric fields. The theoretical description of conduction and valence subbands is based on a multiband k • p formalism. Experimental results are summarized, as obtained by beatings of the Shubnikov-de Haas oscillations, magnetoconductance in antilocalization regime, Raman scattering, spin resonance and cyclotron resonance. This review article is motivated by recent interest in spin properties of heterostructures in view of spintronic applications.

Experimental determination of the Rashba coefficient in InSb/InAlSb quantum wells at zero magnetic field and elevated temperatures

“…The common techniques for measuring it require either extrapolation from high magnetic fields [11,12] or the fitting of quantum interference corrections to the magnetoconductivity at low fields [13]. Extrapolation from high magnetic fields is non-trivial, not-only because the Zeeman effect obscures the Rashba contribution to the splitting, but also because the latter is rapidly quenched by the field [14]. Thus neither technique is a simple or direct measurement of spin splitting at zero field, the value relevant for most practical applications.…”

Spin Relaxation by Transient Monopolar and Bipolar Optical Orientation

“…This was done so that a single tuneable pump laser, in our case the free electron laser FELIX, could easily reach both regimes. NGSs may be important in future spintronics applications because of their high Rashba effect [15][16][17], g factor, and mobility, etc. Indeed electrical observation of injection with long spin mean free path has been reported [18].…”

Antilocalization and spin-orbit coupling in the hole gas in strainedGaAs∕InxGa1−xAsMinkov1, Шерстобитов2, Германенко3 et al. 2005Phys. Rev. B40081View full textAdd to dashboardCite

“…6,7,8,9 The measurements of interference induced low-filed magnetoresistance are the powerful tool for studies of the spin-splitting, spin-and phase-relaxation mechanisms. At present, there are numerous studies of n-type 2D systems 2,10,11,12,13,14,15,16 , whereas the more complicated p-type systems are studied noticeable less 17,18,19,20,21 (for more references see review article by Zawadzki and Pfeffer 22 ). As for the strained quantum well, the antilocalization and spin relaxation in 2D hole gas are practically not investigated in these systems.…”