Spin selector by ferroelectric triple barrier resonant tunneling diode

Li, M. K.; Kang, Tae Won; Kim, N. M.

doi:10.1063/1.3110048

Cited by 7 publications

(3 citation statements)

References 17 publications

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“…This 'bandgap engineering' offers a broad-spectrum of opportunities for designing various semiconductor nanodevices. The transport properties of the semiconductor heterostructures are characterized by the non-Ohmic behaviour which is an object of intensive experimental and theoretical research in recent years [4][5][6][7][8][9][10][11][12][13][14]. Understanding the origin of these characteristics in multi-barrier resonant tunnelling nanodevices is extremely important for both the basic research and design of high-speed electronic circuits.…”

Section: Introductionmentioning

confidence: 99%

Intrinsic current oscillations in an asymmetric triple-barrier resonant tunnelling diode

Wójcik¹,

Spisak²,

Wołoszyn³

et al. 2010

Semicond. Sci. Technol.

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The electronic transport characteristics of an asymmetric triple-barrier resonant tunnelling diode are calculated by the time-dependent Wigner-Poisson method. The intrinsic current oscillations are found in two separate bias voltage ranges. The first one is located below the resonant current peak, and the second lies in the negative differential resistance region. We provide the explanation of the current density oscillations in these two separate bias voltage ranges based on the analysis of the self-consistent potential profiles and changes of electron density. We have shown that two different formation mechanisms are responsible for the current density oscillations in these two bias voltage ranges. In the bias voltage range below the resonant current peak in the current-voltage characteristics, the current density oscillations are caused by the coupling between quasi-bound states in the left and right quantum wells. On the other hand, the current density oscillations in the negative differential resistance region result from the coupling between quasi-bound states in the left quantum well and the quantum well formed in the region of the left contact.

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Section: Introductionmentioning

confidence: 99%

Intrinsic current oscillations in an asymmetric triple-barrier resonant tunnelling diode

Wójcik¹,

Spisak²,

Wołoszyn³

et al. 2010

Semicond. Sci. Technol.

View full text Add to dashboard Cite

show abstract

“…The spinpolarized current is controlled by the bias voltage in the presence of the external magnetic field in paramagnetic RTDs 17,18,20,21 or even without the external magnetic field in ferromagnetic RTDs. [22][23][24][25][26][27] If the quantum well in the RTD is made from the DMS, the spin splitting of the quasi-bound state energy level gives rise to the resonant tunneling conditions for the spin-up and spindown electrons satisfied for different bias voltages. This leads to the separation of both the spin current components and consequently to the spin polarization of the net current.…”

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Intrinsic oscillations of spin current polarization in a paramagnetic resonant tunneling diode

et al. 2012

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A spin-and time-dependent electron transport has been studied in a paramagnetic resonant tunneling diode using the self-consistent Wigner-Poisson method. Based on the calculated currentvoltage characteristics in an external magnetic field we have demonstrated that under a constant bias both the spin-up and spin-down current components exhibit the THz oscillations in two different bias voltage regimes. We have shown that the oscillations of the spin-up (down) polarized current result from the coupling between the two resonance states: one localized in the triangular quantum well created in the emitter region and the second localized in the main quantum well. We have also elaborated the one-electron model of the current oscillations, which confirms the results obtained with the Wigner-Poisson method. The spin current oscillations can lower the effectiveness of spin filters based on the paramagnetic resonant tunneling structures and can be used to design the generators of the spin polarized current THz oscillations that can operate under the steady bias and constant magnetic field. a

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Multiferroic control of magneto-current through a resonant tunneling diode

Kim

2011

Journal of Applied Physics

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We study the resonant tunneling magneto-resistance (TMR) of a multiferroic resonant tunneling diode, which is hybridized of ferroelectric double barriers and a ferromagnetic quantum well. Using the nonequilibrium Green’s function method we show that magneto-currents through the resonant tunneling diode and its current spin polarization can be manipulated by changing the relative direction of an applied magnetic field to the spontaneous magnetic field in the diluted magnetic semiconductor quantum well as well as by reversing dipole polarization directions in ferroelectric barriers. With these results, we propose a multiferroic spin device to control the amount of current and spin polarization of current through it.

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Spin selector by ferroelectric triple barrier resonant tunneling diode

Cited by 7 publications

References 17 publications

Intrinsic current oscillations in an asymmetric triple-barrier resonant tunnelling diode

Intrinsic current oscillations in an asymmetric triple-barrier resonant tunnelling diode

Intrinsic oscillations of spin current polarization in a paramagnetic resonant tunneling diode

Multiferroic control of magneto-current through a resonant tunneling diode

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