Spin-Resolved Unoccupied Electronic Band Structure from Quantum Size Oscillations in the Reflectivity of Slow Electrons from Ultrathin Ferromagnetic Crystals

Zdyb, R.; Bauer, E.

doi:10.1103/physrevlett.88.166403

Cited by 68 publications

(25 citation statements)

References 17 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Refs. [7][8][9][10][11][12][13][14][15][16][17][18][19][20][21][22][23][24][25]. It is also known that the presence of QSE states influence adsorption of organic molecules on a surface of ultrathin films via oscillatory changes in the density of states at the Fermi level [26].…”

Section: Introductionmentioning

confidence: 99%

Quantum size effect in ultrathin Au films on the Si(111) surface

Kopciuszyński

Dyniec

Krawiec

et al. 2015

Applied Surface Science

Self Cite

View full text Add to dashboard Cite

Section: Introductionmentioning

confidence: 99%

Quantum size effect in ultrathin Au films on the Si(111) surface

Kopciuszyński

Dyniec

Krawiec

et al. 2015

Applied Surface Science

Self Cite

View full text Add to dashboard Cite

“…This is due to a Quantum Size Effect (QSE) characteristic of ultra-thin films, 178 which was hoped to increase exchange asymmetry above bulk values for improved polarimeter performance. 179 The QSE can be pictured like a Fabry-Pérot-like interferometer as diagrammed in First, the damped amplitude of the minority direction oscillations compared to the majority can be interpreted as due to a smaller inelastic mean free path of minority electrons. 174 Second, the minority spin oscillations are clearly phase shifted to higher energy with respect to majority spins.…”

Section: Spleem Essentially Images the S (Ex)mentioning

confidence: 99%

A New Spin on Photoemission Spectroscopy

Jozwiak

2008

View full text Add to dashboard Cite

Professor Alessandra Lanzara, ChairThe electronic spin degree of freedom is of general fundamental importance to all matter.Understanding its complex roles and behavior in the solid state, particularly in highly correlated and magnetic materials, has grown increasingly desirable as technology demands advanced devices and materials based on ever stricter comprehension and control of the electron spin. However, direct and efficient spin dependent probes of electronic structure are currently lacking.Angle Resolved Photoemission Spectroscopy (ARPES) has become one of the most successful experimental tools for elucidating solid state electronic structures, bolstered by continual breakthroughs in efficient instrumentation. In contrast, spin-resolved photoemission spectroscopy has lagged behind due to a lack of similar instrumental advances. The power of photoemission spectroscopy and the pertinence of electronic spin in the current research climate combine to make breakthroughs in Spin and Angle Resolved Photoemission Spectroscopy (SARPES) a high priority .This thesis details the development of a unique instrument for efficient SARPES and represents a radical departure from conventional methods. A custom designed spin polarimeter based on low energy exchange scattering is developed, with projected efficiency gains of two orders of magnitude over current state-of-the-art polarimeters. For energy analysis, the 1 popular hemispherical analyzer is eschewed for a custom Time-of-Flight (TOF) analyzer offering an additional order of magnitude gain in efficiency. The combined instrument signifies the breakthrough needed to perform the high resolution SARPES experiments necessary for untangling the complex spin-dependent electronic structures central to today's condensed matter physics.

show abstract

“…The capability to image the orientation of the magnetization 40 vector with high angular resolution makes SPLEEM a particularly useful tool for 41 studying domain wall (DW) spin textures [16,17,18,19]. The energy dependence of 42 electron reflectivity at surfaces is a consequence of the unoccupied electronic structure 43 of the sample, and applying SPLEEM to measure electron reflectivity spectra can be 44 used to determine spin-dependent electronic structures [2,20], as was demonstrated 45 using quantum well states in thin films [21,22,23,24,25]. 46 High lateral resolution in SPLEEM makes it possible to study energy spectra in 47 non-collinear spin textures such as in magnetic DWs.…”

mentioning

confidence: 99%

Magnetic domain wall contrast under zero domain contrast conditions in spin polarized low energy electron microscopy

Zhou

Chen

et al. 2019

Ultramicroscopy

View full text Add to dashboard Cite

14 Important applications of spin polarized low energy electron microscopy 15 (SPLEEM) employ this technique's vector imaging capability to resolve domain wall 16 (DW) spin textures. Studying several thin film systems including Co/W(110), 17 Co/Cu(001) and (Co/Ni) n /W(110), we show that an additional contrast can appear at 18 magnetic DWs. By imaging the magnetization as a function of electron landing energy, 19 electron energies are selected at which the magnetic domain contrast vanishes.20 Surprisingly, under such conditions of zero contrast between magnetic domains, we 21 observe the appearance of magnetic contrast outlining the DWs. This DW contrast does 22 not depend on the DW spin texture. Instead, our measurements show that this DW 23 contrast results from a combination of the energy-dependence of the spin reflectivity 24 asymmetry of the magnetic film, the finite energy width of the spin polarized electron 25 source, and the dispersion of the magnetic prism array that separates the illumination 26 and imaging columns of the instrument. Awareness of this DW contrast mechanism is 27 useful to aid correct interpretation of SPLEEM images. 28 29 Keywords 30 Spin polarized low energy electron microscopy; magnetic domains; magnetic domain 31 walls; magnetic thin films 2 32 1. Introduction 33Spin polarized low energy electron microscopy (SPLEEM) is a special kind of low 34 energy electron microscopy (LEEM) that uses a spin polarized electron beam to 35 generate magnetic domain images from samples [1,2,3]. Due to its high spatial 36 resolution, SPLEEM provides a valuable means to study magnetic domain structures in 37 surfaces [4] and thin films [5,6,7,8], especially in systems near the spin reorientation 38 transition [9,10,11,12], as well as to study magnetization profiles in magnetic 39 nanoparticles [13,14,15]. The capability to image the orientation of the magnetization 40 vector with high angular resolution makes SPLEEM a particularly useful tool for 41 studying domain wall (DW) spin textures [16,17,18,19]. The energy dependence of 42 electron reflectivity at surfaces is a consequence of the unoccupied electronic structure 43 of the sample, and applying SPLEEM to measure electron reflectivity spectra can be 44 used to determine spin-dependent electronic structures [2,20], as was demonstrated 45 using quantum well states in thin films [21,22,23,24,25]. 46 High lateral resolution in SPLEEM makes it possible to study energy spectra in 47 non-collinear spin textures such as in magnetic DWs. Due to spin-orbit coupling, the 48 electronic structure of non-collinear spin textures can be different from that of collinear 49 ones. Recently, C. Hanneken et al. demonstrated that non-collinear spin textures in 50 magnetic skyrmions can alter the local electronic structure, resulting in a tunneling 51 resistance different from magnetic single domains [26]. More generally, the extent to 52 which the local electronic structure inside magnetic DW may be modulated by the non-53 collinear spin texture remains an interesting qu...

show abstract

Spin-Resolved Unoccupied Electronic Band Structure from Quantum Size Oscillations in the Reflectivity of Slow Electrons from Ultrathin Ferromagnetic Crystals

Cited by 68 publications

References 17 publications

Quantum size effect in ultrathin Au films on the Si(111) surface

Quantum size effect in ultrathin Au films on the Si(111) surface

A New Spin on Photoemission Spectroscopy

Magnetic domain wall contrast under zero domain contrast conditions in spin polarized low energy electron microscopy

Contact Info

Product

Resources

About