Spin-resolved photoemission of a ferromagnetic Mn5Ge3(0001) epilayer on Ge(111)

Dedkov, Yuriy; Holder, M.; Mayer, G.; Fonin, Mikhail; Preobrajenski, Alexeij B.

doi:10.1063/1.3103336

Cited by 31 publications

(22 citation statements)

References 16 publications

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“…One important fact that makes the MnGe alloy interesting is that it shows magnetic properties at a temperature of ∼296 K. 2 The magnetic and structural properties of thin as well as thick Mn 5 Ge 3 films on Ge(111) grown by solid phase epitaxy have been studied by several groups. [2][3][4][5][6][7][8] Zeng et al 2,3 have reported that uniform Mn 5 Ge 3 films with a √ 3 × √ 3 periodicity, referred to as the Ge(111) surface, are produced when annealing as-deposited manganese between 300-650 • C, and that the formation of the √ 3 × √ 3 surface structure should be associated with the ordered Mn 5 Ge 3 phase. Sangaletti et al 5 provided evidence for the surface ferromagnetism in a thin metallic Mn/Ge(111) layer with a √ 3 × √ 3 surface structure.…”

Section: Introductionmentioning

confidence: 99%

Surface atomic and electronic structure of Mn5Ge3on Ge(111)

2011

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The atomic and electronic structure of the Mn 5 Ge 3 (001) surface grown on Ge(111) c(2 × 8) has been studied in detail by angle-resolved photoelectron spectroscopy (ARPES), scanning tunneling microscopy (STM), and scanning tunneling spectroscopy. ARPES spectra recorded from the¯ -K-M and¯ -M-¯ directions of the surface Brillouin zone show six surface-related features. The STM images recorded at biases higher/lower than ±0.4 V always show a honeycomb pattern with two bright protrusions in each unit cell. At lower biases, a hexagonal, intermediate transition, and a honeycomb pattern are observed. These can be explained as arising from Mn and Ge atoms in the sublayer arranged in triangular structures and Mn atoms in the top layer arranged in a honeycomb structure, respectively. The photoemission and STM data from the germanide surface are discussed and compared to earlier published theoretical, photoelectron spectroscopy, and scanning tunneling microscopy studies.

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Section: Introductionmentioning

confidence: 99%

Surface atomic and electronic structure of Mn5Ge3on Ge(111)

2011

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“…Among other suitable materials Mn 5 Ge 3 presents all the prerequisite crite-15 ria necessary in spin devices: it is a well known ferromagnet with a magnetic ordering persisting up to the room temperature (T C = 297 K) [2], with an ex-perimental spin polarization of P = 15±5% [3], and it has been demonstrated that Mn 5 Ge 3 thin films could be grown epitaxially on a Ge (111) are grown by the so-called solid phase epitaxy (SPE) method which requires the co-deposition of Mn and C layers followed by annealing between 600 K and 920 K to activate the diffusion process.…”

Section: Introductionmentioning

confidence: 99%

Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy

et al. 2015

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of the spin injection. To avoid these two phenomena we investigate the growth of Mn 5 Ge 3 and C-doped Mn 5 Ge 3 films on Ge(111) substrates by molecular beam epitaxy at room-temperature. The reactive deposition epitaxy method is used to deposit these films. Reflection high energy electron diffraction, X-ray diffraction analysis, transmission electron microscopy and atomic force microscopy indicate that the crystalline quality is very high. Magnetic characterizations by superconducting quantum interference device and ferromagnetic resonance reinforce the structural analysis results on the thin films quality.

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“…It clearly shows another set of lattice structure different from the Ge matrix. Using the lattice spacing of the Ge as the reference, we calculated the observed lattice spaces of the cluster, which matched with the (002) and (010) atomic planes of the hexagonal Mn 5 Ge 3 phase [17][18]. Furthermore, it was confirmed that the Mn 5 Ge 3 (002) plane was parallel to the Ge (111) plane.…”

Section: Mn X Ge 1-x Thin Film Growth By Mbementioning

confidence: 90%

Quest for high-Curie temperature Mn Ge1− diluted magnetic semiconductors for room-temperature spintronics applications

Nie

Tang

Wang

2015

Journal of Crystal Growth

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Cite this article as: Tianxiao Nie, Jianshi Tang, Kang L. Wang, Quest for Highcurie temperature Mn x Ge 1-x diluted magnetic semiconductors for roomtemperature spintronics applications, Journal of Crystal Growth, http://dx. Abstract:In this paper, we report the non-equilibrium growth of various Mn-doped Ge dilute magnetic semiconductor nanostructures using molecular-beam epitaxy, including quantum dots, nanodisks and nanowires. Their detailed structural and magnetic properties are characterized. By comparing the results with those in Mn x Ge 1-x thin films, it is affirmed that the use of nanostructures helps eliminate crystalline defects and meanwhile enhance the carrier-mediate ferromagnetism from substantial quantum confinements. Our systematic studies provide a promising platform to build nonvolatile spinFET and other novel spintronic devices based upon dilute magnetic semiconductor nanostructures.

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Spin-resolved photoemission of a ferromagnetic Mn5Ge3(0001) epilayer on Ge(111)

Cited by 31 publications

References 16 publications

Surface atomic and electronic structure of Mn5Ge3on Ge(111)

Surface atomic and electronic structure of Mn5Ge3on Ge(111)

Very low-temperature epitaxial growth of Mn5Ge3 and Mn5Ge3C0.2 films on Ge(111) using molecular beam epitaxy

Quest for high-Curie temperature Mn Ge1− diluted magnetic semiconductors for room-temperature spintronics applications

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