Spin relaxation in disordered graphene: Interplay between puddles and defect-induced magnetism

Abstract

We study the spin relaxation in graphene due to magnetic moments induced by defects. We propose and employ in our studies a microscopic model that describes magnetic impurity scattering processes mediated by charge puddles. This model incorporates the spin texture related to the defect-induced state. We calibrate our model parameters using experimentally-inferred values. The results we obtain for the spin relaxation times are in very good agreement with experimental findings. Our study leads to a comprehensive explanation for the short spin relaxation times reported in the experimental literature. We also propose a new interpretation for the puzzling experimental observation of enhanced spin relaxation times in hydrogenated graphene samples in terms of a combined effect due to disorder configurations that lead to an increased coupling to the magnetic moments and the tunability of the defect-induced π-like magnetism in graphene.

Spin Relaxation ins-Wave Superconductors in the Presence of Resonant Spin-Flip Scatterers

“…In contrast, fluorine-ω ¼ 5.5 eV, ε ¼ −2.2 eV, and J ¼ 0.5 eV-develops [56,79] a wide resonance region spreading below the Dirac point; see the magnetic DOS in Fig. 2(d) To explain this peculiar resonant depletion of QP SRs in SCG, which is at odds with the well-understood resonant enhancement [31,32,[92][93][94][95] in the normal phase, we calculate the energies (poles of T matrix, [96]) of the corresponding YSR states [66][67][68] which develop around magnetic impurities [97,98], see Figs. 2(e) and 2(f).…”