Spin relaxation and anticrossing in quantum dots: Rashba versus Dresselhaus spin-orbit coupling

Bulaev, D. V.; Loss, Daniel

doi:10.1103/physrevb.71.205324

Cited by 146 publications

(152 citation statements)

References 31 publications

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“…In single quantum dots spin hot spots were found in Ref. 40, while in vertical few-electron quantum dots in Ref. 41.…”

Section: Introductionmentioning

confidence: 99%

“…40 spin relaxation rates due to the deformation potential were computed in the lowest order of the perturbation theory and an analogous figure to our Fig. 1 was presented.…”

Section: ͑28͒mentioning

confidence: 99%

“…The anticrossing occurs for single dots only when the Bychkov-Rashba term is present, since the Dresselhaus terms do not couple the unperturbed orbital states. 40,42 In this case we can neglect all terms but that one containing ␤ ij in Eq. ͑14͒ and for the spin relaxation rate due to the anticrossing one gets ⌫͑spin, acr͒ = ͉␤ ij ͉ 2 ⌫͑orbital͒.…”

Section: Spin Relaxation Ratesmentioning

confidence: 99%

“…While in single dots spin hot spots appear due to the Bychkov-Rashba coupling, 40 in double dots both the Bychkov-Rashba and Dresselhaus couplings contribute. The reason is the different symmetry of the underlying states in single and double dots.…”

Section: Introductionmentioning

confidence: 99%

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Orbital and spin relaxation in single and coupled quantum dots

Stano

Fabian

2006

Phys. Rev. B

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Phonon-induced orbital and spin relaxation rates of single electron states in lateral single and double quantum dots are obtained numerically for realistic materials parameters. The rates are calculated as a function of magnetic field and interdot coupling, at various field and quantum dot orientations. It is found that orbital relaxation is due to deformation potential phonons at low magnetic fields, while piezoelectric phonons dominate the relaxation at high fields. Spin relaxation, which is dominated by piezoelectric phonons, in single quantum dots is highly anisotropic due to the interplay of the Bychkov-Rashba and Dresselhaus spin-orbit couplings. Orbital relaxation in double dots varies strongly with the interdot coupling due to the cyclotron effects on the tunneling energy. Spin relaxation in double dots has an additional anisotropy due to anisotropic spin hot spots which otherwise cause giant enhancement of the rate at useful magnetic fields and interdot couplings. Conditions for the absence of the spin hot spots in in-plane magnetic fields ͑easy passages͒ and perpendicular magnetic fields ͑weak passages͒ are formulated analytically for different growth directions of the underlying heterostructure. It is shown that easy passages disappear ͑spin hot spots reappear͒ if the double dot system loses symmetry by an xy-like perturbation.

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“…In single quantum dots spin hot spots were found in Ref. 40, while in vertical few-electron quantum dots in Ref. 41.…”

Section: Introductionmentioning

confidence: 99%

“…40 spin relaxation rates due to the deformation potential were computed in the lowest order of the perturbation theory and an analogous figure to our Fig. 1 was presented.…”

Section: ͑28͒mentioning

confidence: 99%

Section: Spin Relaxation Ratesmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Orbital and spin relaxation in single and coupled quantum dots

Stano

Fabian

2006

Phys. Rev. B

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“…Further, this calculation has also been extended to include the transverse spin decay time due to spin-orbit interaction alone, showing that dephasing is limited by relaxation, or T 2 = 2T 1 to leading order in the spin-orbit coupling, independent of the particular source of fluctuations . Additionally, 1/T 1 has been shown to have a strong dependence on the magnetic field direction, relative to the crystal axes (Fal'ko et al 2005), shows a strong enhancement near avoided level crossings, which may allow independent measurements of the Rashba and Dresselhaus coupling constants (Bulaev and Loss 2005a), and plays a role in phonon-assisted cotunneling current through quantum dots (Lehmann and Loss 2006). The relaxation rate of quantum-dot-confined hole spins due to spin-orbit coupling and phonons has also been investigated.…”

Section: Hyperfine Interaction 5 Decoherencementioning

confidence: 99%

Quantum Computing with Spins in Solids

Coish

Loss

2007

Handbook of Magnetism and Advanced Magnetic Materials

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The ability to perform high-precision one-and two-qubit operations is sufficient for universal quantum computation. For the Loss-DiVincenzo proposal to use single electron spins confined to quantum dots as qubits, it is therefore sufficient to analyze only single-and coupled double-dot structures, since the strong Heisenberg exchange coupling between spins in this proposal falls off exponentially with distance and long-ranged dipolar coupling mechanisms can be made significantly weaker. This scalability of the Loss-DiVincenzo design is both a practical necessity for eventual applications of multi-qubit quantum computing and a great conceptual advantage, making analysis of the relevant components relatively transparent and systematic. We review the Loss-DiVincenzo proposal for quantum-dot-confined electron spin qubits, and survey the current state of experiment and theory regarding the relevant single-and double-quantum dots, with a brief look at some related alternative schemes for quantum computing.

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Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

Liu,

Guan,

Luo

et al. 2024

Adv Funct Materials

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Quantum computing offers the potential to revolutionize information processing by exploiting the principles of quantum mechanics. Among the diverse quantum bit (qubit) technologies, silicon‐based semiconductor spin qubits have emerged as a promising contender due to their potential scalability and compatibility with existing semiconductor technologies. In this paper, the latest developments of spin qubits in gate‐defined semiconducting nanostructures made of silicon and germanium, starting from the basic properties of electron and hole states in group‐IV semiconductors, are reviewed. Specifically, various nanostructures that exploit their unique microscopic properties for qubit implementations, elaborating on the advances and challenges in experiments, are discussed. Strategies for enhancing qubit performance, such as designing new nanostructures and identifying suitable operating points, particularly those involving the valleys of electron qubits and the heavy‐hole–light‐hole mixing of hole qubits, are also highlighted. This comprehensive review thus provides valuable insights into the current state‐of‐the‐art in semiconductor quantum computing and suggests avenues for future research.

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Spin relaxation and anticrossing in quantum dots: Rashba versus Dresselhaus spin-orbit coupling

Cited by 146 publications

References 31 publications

Orbital and spin relaxation in single and coupled quantum dots

Orbital and spin relaxation in single and coupled quantum dots

Quantum Computing with Spins in Solids

Progress of Gate‐Defined Semiconductor Spin Qubit: Host Materials and Device Geometries

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