Spin quantum beats in semiconductors

Oestreich, M.; Hallstein, S.; Rühle, W. W.

doi:10.1109/2944.571776

Cited by 51 publications

(25 citation statements)

References 39 publications

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“…The degree of circular polarization of the PL, P σ = (σ + − σ − )/(σ + + σ − ), is thus proportional to the conduction electron spin polarization. 16 Figure 2 shows the time evolution of the component of the spin polarization parallel to the z axis for both well widths. Both data sets were measured simultaneously at a sample temperature of 25 K for a reverse bias of 0 V and a magnetic field of 4 T applied parallel to the in-plane [110] axis.…”

Section: Methodsmentioning

confidence: 99%

“…We use spin quantum beat spectroscopy 15,16 to investigate the spin dynamics of symmetric (001) quantum wells with a variable potential gradient produced by an external electric field applied along the growth axis. The sample contains two different quantum well widths which allows the effect of electron confinement energy on the spin dynamics to be studied.…”

Section: Introductionmentioning

confidence: 99%

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Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells

et al. 2013

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Spin quantum beat spectroscopy is employed to investigate the in-plane anisotropy of the spin dynamics in (001) GaAs/AlGaAs quantum wells induced by an external electric field. This technique allows the anisotropy of the spin relaxation rate s and the electron Landé g factor g * to be measured simultaneously. The measurements are compared to similar data from (001) GaAs/AlGaAs quantum wells with applied shear strain and asymmetric barrier growth. All of these operations act to reduce the symmetry compared to that of a symmetric (001) quantum well in an identical manner (D 2d → C 2v ). However, by looking at the anisotropy of both s and g * simultaneously we show that the microscopic actions of these symmetry breaking operations are very different. The experiments attest that although symmetry arguments are a very useful tool to identify the allowed spin dependent properties of a material system, only a microscopic approach reveals if allowed anisotropies will manifest.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells

et al. 2013

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“…Spin-dependent all-optical switching in semiconductor quantum well etalons 8 and spin-dependent ultrafast optical gain modulation in microcavity lasers have been recently demonstrated. 9 In addition, differential quantum efficiency as high as 64% is attainable for all-epitaxially grown telecom-wavelength vertical cavity surface emitting lasers ͑VCSELs͒ with InP lattice-matched AlInGaAs alloys for quantum well active regions and AlGaAsSb alloys for highly reflective distributed Bragg reflectors operating above room temperature. 10,11 The possibility of integrating laser sources, optical modulators, and optical switches on a single photonic integrated chip with added functionalities based on spin degrees of freedom makes AlInGaAs alloys ideal candidates for spintronics.…”

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confidence: 99%

Room temperature electron spin coherence in telecom-wavelength quaternary quantum wells

Lau

Sih

Stern

et al. 2006

Applied Physics Letters

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Articles you may be interested inElectronic band structures and electron spins of InAs/GaAs quantum dots induced by wetting-layer fluctuation J. Appl. Phys. 110, 054320 (2011); 10.1063/1.3633508 Effect of electron spin-spin exchange interaction on spin precession in coupled quantum well Room temperature gate modulation of electron spin relaxation time in (110)-oriented GaAs/AlGaAs quantum wells Appl. Phys. Lett. 97, 202102 (2010); 10.1063/1.3514675 Temperature dependence of the resistively detected electron spin resonance signals in a wide parabolic quantum well AIP Conf. Proc. 893, 633 (2007); 10.1063/1.2730050Room-temperature electric-field controlled spin dynamics in (110) InAs quantum wells

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“…For the width of the quantum well used here, it is known that g xx is negative, 23 which is the origin of the minus sign in Eq. (5).…”

Section: Theorymentioning

confidence: 99%

“…We use spin quantum beat spectroscopy 23,24 to investigate the effect on the spin dynamics of continuously tunable shear strain applied in the plane of an undoped, symmetric, 11.2-nm, (001)-oriented GaAs/Al 0.4 Ga 0.6 As quantum well. The method gives the spin-relaxation rates for spin components along the growth axis, s , and in the quantum-well plane, s ⊥ , and also the in-plane Landé g factor of the photoexcited conduction electrons.…”

Section: Introductionmentioning

confidence: 99%

Strain-induced spin relaxation anisotropy in symmetric (001)-oriented GaAs quantum wells

et al. 2011

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We show experimentally, using spin quantum beat spectroscopy, that strain applied to an undoped symmetric (001) GaAs/AlGaAs multiple quantum well causes an in-plane anisotropy of the spin-relaxation rate s , but leaves the electron Landé g factor isotropic. The spin-relaxation-rate anisotropy gives a direct measure of the bulk inversion asymmetry and the strain contributions to the conduction-band spin splitting. The comparison of the measured strain-splitting coefficient C 3 for the quantum well with the value for bulk GaAs suggests a dependence on electron quantum confinement. The isotropic g factor implies a symmetric conduction electron wave function, whereas the anisotropic spin-relaxation rate requires a nonzero expectation value of the valenceband potential gradient on the conduction-band states. Therefore, the experiment suggests that strain generates an effective valence-band potential gradient, while the conduction-band potential remains symmetrical to a good approximation.

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Spin quantum beats in semiconductors

Cited by 51 publications

References 39 publications

Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells

Effect of symmetry reduction on the spin dynamics of (001)-oriented GaAs quantum wells

Room temperature electron spin coherence in telecom-wavelength quaternary quantum wells

Strain-induced spin relaxation anisotropy in symmetric (001)-oriented GaAs quantum wells

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