Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

Dankert, André; Pashaei, Parham; Kamalakar, M. Venkata; Gaur, Anand P. S.; Sahoo, Satyaprakash; Rungger, Ivan; Narayan, Awadhesh; Dolui, Kapildeb; Hoque, Anamul Md; Patel, R. S.; Jong, Machiel Pieter de; Katiyar, Ram S.; Sanvito, Stefano; Dash, Saroj P.

doi:10.1021/acsnano.7b02819

Cited by 56 publications

(55 citation statements)

References 58 publications

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“…These features, in turn, endow 2D materials with exciting prospects for promising applications in the fields of energy storage/conversion and optoelectronics. In the early stages, the research on 2D materials was primarily focused on single or binary elemental materials . Recently, however, 2D ternary materials have attracted increasing attention due to their multiple degrees of freedom .…”

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confidence: 99%

Liquid‐Alloy‐Assisted Growth of 2D Ternary Ga₂In₄S₉ toward High‐Performance UV Photodetection

et al. 2018

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Since the first isolation of graphene in 2004, [1] 2D materials have gained growing attention because of their unique physical and physicochemical properties, [2,3] originating from their reduced dimensions, [4] strong electron confinement, [5] abundant active sites, [6] and edge polarization. [7] These features, in turn, endow 2D materials with exciting prospects for promising applications in the fields of energy storage/conversion and optoelectronics. In the early stages, the research on 2D materials was primarily focused on single or binary elemental materials. [8][9][10][11][12][13] Recently, however, 2D ternary materials have attracted increasing attention due to their multiple degrees of freedom. [14][15][16][17][18][19][20] The added freedom of stoichiometry variation in 2D ternary materials can be used to tune their physical properties and therefore may lead to promising applications. [21,22] Ternary Ga 2 In 4 S 9 is a layered material with weak van der Waals interaction and reveals n-type semiconducting behavior. [23,24] The multinary compound that reveals an unprecendented robust electronic character as well as a wide bandgap close to 2.7 eV with pronounced photosensitivity and temperature-dependent optical absorption edge opens a new paradigm for UV detection. [23] This is particularly desirable for military and civilian fields. [25] Specifically, as a kind of homobimetallic sulfide, the ternary Ga 2 In 4 S 9 is believed to possess novel electronic and optoelectronic properties compared the 2D counterparts. [26] Up to now, only work on bulk Ga 2 In 4 S 9 with a thickness of a few micrometers has been reported, in which bulk Ga 2 In 4 S 9 is obtained by chemical vapor transport. [23,27] The bulk structure actually hinders their practical application in the field of micro-nano electronic and optoelectronic devices. [28] Unfortunately, there are no reports on the synthesis of 2D ternary Ga 2 In 4 S 9 flakes with controllable stoichiometry, which may be attributed to the difficulty in selecting optimal homobimetallic precursors. Recently, the creation of atomically thin metal oxides or selenides by adopting eutectic gallium melts with tunable metal elements offers a promising approach to grow ternary semiconductors. [29][30][31][32] In this letter, we report the growth of ultrathin Ga 2 In 4 S 9 flakes by employing liquid gallium/indium (Ga/In) alloy as the reaction environment. Because of the reduced reaction temperature by using the liquid Ga/In alloy, [31] the key point of our growth 2D ternary systems provide another degree of freedom of tuning physical properties through stoichiometry variation. However, the controllable growth of 2D ternary materials remains a huge challenge that hinders their practical applications. Here, for the first time, by using a gallium/indium liquid alloy as the precursor, the synthesis of high-quality 2D ternary Ga 2 In 4 S 9 flakes of only a few atomic layers thick (≈2.4 nm for the thinnest samples) through chemical vapor deposition is realized. Their UV-light-sensing appl...

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confidence: 99%

Liquid‐Alloy‐Assisted Growth of 2D Ternary Ga₂In₄S₉ toward High‐Performance UV Photodetection

et al. 2018

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“…A thin oxide-insulating layer with better lattice matching between the FM and TMD can help in stabilizing the structure and a conductivity match. An asymmetric FM combination can offer easy switching of the FM blocks at different magnetic fields due to different coercivity as used by Dankert et al 74 and Khan et al 79 with the latter observing the highest MR (~3.2%) within the available reports. It is expected that a similar structure will result in a higher MR at much lower temperatures.…”

Section: B Ferromagnet-2d Semiconductor Junctionsmentioning

confidence: 99%

Two-dimensional van der Waals spinterfaces and magnetic-interfaces

Dayen

Ray

Karis

et al. 2020

Applied Physics Reviews

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117

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Two-dimensional (2D) materials have brought fresh prospects for spintronics, as evidenced by the rapid scientific progress made in this frontier over the past decade. In particular, for charge perpendicular to plane vertical magnetic tunnel junctions, the 2D crystals present exclusive features such as atomic-level thickness control, near-perfect crystallography without dangling bonds, and novel electronic structure-guided interfaces with tunable hybridization and proximity effects, which lead to an entirely new group of spinterfaces. Such crystals also present new ways of integration of atomically thin barriers in magnetic tunnel junctions and an unprecedented means for developing composite barriers with atomic precision. All these new aspects have sparked interest for theoretical and experimental efforts, revealing intriguing spin-dependent transport and spin inversion effects. Here, we discuss some of the distinctive effects observed in ferromagnetic junctions with prominent 2D crystals such as graphene, hexagonal boron nitride, and transition metal dichalcogenides and how spinterface phenomena at such junctions affect the observed magnetoresistance in devices. Finally, we discuss how the recently emerged 2D ferromagnets bring upon an entirely novel category of van der Waals interfaces for efficient spin transmission and dynamic control through exotic heterostructures.

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“…Over the last decade, significant research efforts have been dedicated to introduce 2D materials to control and tailor the magnetoresistive response of the interfaces [76]. Boosted by the theoretical prediction of perfect spin filtering by few of its layers [77][78][79][80], graphene has been the first 2D material to be investigated [81][82][83], rapidly followed by insulating h-BN [84][85][86] and semi-conducting transition metal dichalcogenides (TMDCs) [87][88][89][90]. While very promising experimental results have yet been reported, first-principles simulations provide a complementary tool to unravel the full potential of 2DMs in tunneling junctions.…”

Section: Magnetoresistance In 2d Tunnel Junctionsmentioning

confidence: 99%

Computational Atomistic Modeling in Carbon Flatland and Other 2D Nanomaterials

et al. 2020

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As in many countries, the rise of nanosciences in Belgium has been triggered in the eighties in the one hand, by the development of scanning tunneling and atomic force microscopes offering an unprecedented possibility to visualize and manipulate the atoms, and in the other hand, by the synthesis of nano-objects in particular carbon nanostructures such as fullerene and nanotubes. Concomitantly, the increasing calculating power and the emergence of computing facilities together with the development of DFT-based ab initio softwares have brought to nanosciences field powerful simulation tools to analyse and predict properties of nano-objects. Starting with 0D and 1D nanostructures, the floor is now occupied by the 2D materials with graphene being the bow of this 2D ship. In this review article, some specific examples of 2D systems has been chosen to illustrate how not only density functional theory (DFT) but also tight-binding (TB) techniques can be daily used to investigate theoretically the electronic, phononic, magnetic, and transport properties of these atomically thin layered materials.

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Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

Cited by 56 publications

References 58 publications

Liquid‐Alloy‐Assisted Growth of 2D Ternary Ga₂In₄S₉ toward High‐Performance UV Photodetection

Liquid‐Alloy‐Assisted Growth of 2D Ternary Ga₂In₄S₉ toward High‐Performance UV Photodetection

Two-dimensional van der Waals spinterfaces and magnetic-interfaces

Computational Atomistic Modeling in Carbon Flatland and Other 2D Nanomaterials

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Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide

Cited by 56 publications

References 58 publications

Liquid‐Alloy‐Assisted Growth of 2D Ternary Ga2In4S9 toward High‐Performance UV Photodetection

Liquid‐Alloy‐Assisted Growth of 2D Ternary Ga2In4S9 toward High‐Performance UV Photodetection

Two-dimensional van der Waals spinterfaces and magnetic-interfaces

Computational Atomistic Modeling in Carbon Flatland and Other 2D Nanomaterials

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Product

Resources

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Liquid‐Alloy‐Assisted Growth of 2D Ternary Ga₂In₄S₉ toward High‐Performance UV Photodetection

Liquid‐Alloy‐Assisted Growth of 2D Ternary Ga₂In₄S₉ toward High‐Performance UV Photodetection